DE60207006D1 - Magneto-resistiver Film und Speicher mit diesem Film - Google Patents
Magneto-resistiver Film und Speicher mit diesem FilmInfo
- Publication number
- DE60207006D1 DE60207006D1 DE60207006T DE60207006T DE60207006D1 DE 60207006 D1 DE60207006 D1 DE 60207006D1 DE 60207006 T DE60207006 T DE 60207006T DE 60207006 T DE60207006 T DE 60207006T DE 60207006 D1 DE60207006 D1 DE 60207006D1
- Authority
- DE
- Germany
- Prior art keywords
- film
- magneto
- memory
- resistive
- resistive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3227—Exchange coupling via one or more magnetisable ultrathin or granular films
- H01F10/3231—Exchange coupling via one or more magnetisable ultrathin or granular films via a non-magnetic spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Thin Magnetic Films (AREA)
- Magnetic Heads (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001172567 | 2001-06-07 | ||
JP2001172567A JP2002368306A (ja) | 2001-06-07 | 2001-06-07 | 磁気抵抗効果膜およびそれを用いたメモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60207006D1 true DE60207006D1 (de) | 2005-12-08 |
DE60207006T2 DE60207006T2 (de) | 2006-07-13 |
Family
ID=19014170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60207006T Expired - Lifetime DE60207006T2 (de) | 2001-06-07 | 2002-06-06 | Magneto-resistiver Film und Speicher mit diesem Film |
Country Status (7)
Country | Link |
---|---|
US (1) | US6661703B1 (de) |
EP (1) | EP1265249B1 (de) |
JP (1) | JP2002368306A (de) |
KR (1) | KR100446888B1 (de) |
CN (1) | CN1221044C (de) |
DE (1) | DE60207006T2 (de) |
TW (1) | TW578169B (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3592282B2 (ja) * | 2001-10-01 | 2004-11-24 | キヤノン株式会社 | 磁気抵抗効果膜、およびそれを用いたメモリ |
US7189583B2 (en) * | 2003-07-02 | 2007-03-13 | Micron Technology, Inc. | Method for production of MRAM elements |
US7002194B2 (en) * | 2003-07-18 | 2006-02-21 | International Business Machines Corporation | Via AP switching |
JP4150047B2 (ja) * | 2006-06-28 | 2008-09-17 | 株式会社東芝 | 磁気記憶装置 |
US20080173975A1 (en) * | 2007-01-22 | 2008-07-24 | International Business Machines Corporation | Programmable resistor, switch or vertical memory cell |
JP5201885B2 (ja) * | 2007-06-19 | 2013-06-05 | キヤノン株式会社 | 磁性物質の検出装置及び検出方法 |
US7859025B2 (en) * | 2007-12-06 | 2010-12-28 | International Business Machines Corporation | Metal ion transistor |
US20100128519A1 (en) * | 2008-11-25 | 2010-05-27 | Seagate Technology Llc | Non volatile memory having increased sensing margin |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5585198A (en) * | 1993-10-20 | 1996-12-17 | Sanyo Electric Co., Ltd. | Magnetorsistance effect element |
US5818323A (en) * | 1994-09-09 | 1998-10-06 | Sanyo Electric Co., Ltd. | Magnetoresistive device |
US5909345A (en) * | 1996-02-22 | 1999-06-01 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistive device and magnetoresistive head |
US6064552A (en) * | 1997-03-18 | 2000-05-16 | Kabushiki Kaisha Toshiba | Magnetoresistive head having magnetic yoke and giant magnetoresistive element such that a first electrode is formed on the giant magnetoresistive element which in turn is formed on the magnetic yoke which acts as a second electrode |
JP3679593B2 (ja) | 1998-01-28 | 2005-08-03 | キヤノン株式会社 | 磁性薄膜素子および磁性薄膜メモリ素子およびその記録再生方法 |
EP0959475A3 (de) * | 1998-05-18 | 2000-11-08 | Canon Kabushiki Kaisha | Magnetischer Dünnfilmspeicher sowie Schreibe- und Leseverfahren und Anordnung unter Verwendung solchen Speichers |
-
2001
- 2001-06-07 JP JP2001172567A patent/JP2002368306A/ja active Pending
-
2002
- 2002-05-29 TW TW091111484A patent/TW578169B/zh not_active IP Right Cessation
- 2002-05-31 US US10/157,927 patent/US6661703B1/en not_active Expired - Fee Related
- 2002-06-05 KR KR10-2002-0031634A patent/KR100446888B1/ko not_active IP Right Cessation
- 2002-06-06 EP EP02012616A patent/EP1265249B1/de not_active Expired - Lifetime
- 2002-06-06 DE DE60207006T patent/DE60207006T2/de not_active Expired - Lifetime
- 2002-06-07 CN CNB021227101A patent/CN1221044C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1221044C (zh) | 2005-09-28 |
DE60207006T2 (de) | 2006-07-13 |
US6661703B1 (en) | 2003-12-09 |
EP1265249B1 (de) | 2005-11-02 |
KR20030011228A (ko) | 2003-02-07 |
TW578169B (en) | 2004-03-01 |
KR100446888B1 (ko) | 2004-09-04 |
JP2002368306A (ja) | 2002-12-20 |
EP1265249A3 (de) | 2004-10-06 |
EP1265249A2 (de) | 2002-12-11 |
CN1391294A (zh) | 2003-01-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |