DE602008003291D1 - Mehrschichtiges korrosionsresistentes Keramikelement - Google Patents

Mehrschichtiges korrosionsresistentes Keramikelement

Info

Publication number
DE602008003291D1
DE602008003291D1 DE602008003291T DE602008003291T DE602008003291D1 DE 602008003291 D1 DE602008003291 D1 DE 602008003291D1 DE 602008003291 T DE602008003291 T DE 602008003291T DE 602008003291 T DE602008003291 T DE 602008003291T DE 602008003291 D1 DE602008003291 D1 DE 602008003291D1
Authority
DE
Germany
Prior art keywords
ceramic element
resistant ceramic
multilayer corrosion
multilayer
corrosion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602008003291T
Other languages
English (en)
Inventor
Shoji Kano
Waichi Yamamura
Yoshihiro Kubota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Publication of DE602008003291D1 publication Critical patent/DE602008003291D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
DE602008003291T 2007-10-26 2008-09-30 Mehrschichtiges korrosionsresistentes Keramikelement Active DE602008003291D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007278774A JP5236927B2 (ja) 2007-10-26 2007-10-26 耐腐食性積層セラミックス部材

Publications (1)

Publication Number Publication Date
DE602008003291D1 true DE602008003291D1 (de) 2010-12-16

Family

ID=40577950

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602008003291T Active DE602008003291D1 (de) 2007-10-26 2008-09-30 Mehrschichtiges korrosionsresistentes Keramikelement

Country Status (6)

Country Link
US (1) US8829397B2 (de)
EP (1) EP2071610B1 (de)
JP (1) JP5236927B2 (de)
KR (2) KR101502925B1 (de)
DE (1) DE602008003291D1 (de)
TW (1) TW200937995A (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012202370A1 (de) * 2012-02-16 2013-08-22 Webasto Ag Verfahren zur Herstellung einer Fahrzeugheizung und Fahrzeugheizung
JP6359236B2 (ja) * 2012-05-07 2018-07-18 トーカロ株式会社 静電チャック
US9916998B2 (en) 2012-12-04 2018-03-13 Applied Materials, Inc. Substrate support assembly having a plasma resistant protective layer
US9685356B2 (en) * 2012-12-11 2017-06-20 Applied Materials, Inc. Substrate support assembly having metal bonded protective layer
WO2016025573A1 (en) 2014-08-15 2016-02-18 Applied Materials, Inc. Method and apparatus of processing wafers with compressive or tensile stress at elevated temperatures in a plasma enhanced chemical vapor deposition system
KR101605704B1 (ko) * 2015-06-05 2016-03-23 (주)제니스월드 대면적 바이폴라 정전척의 제조방법 및 이에 의해 제조된 대면적 바이폴라 정전척
US10020218B2 (en) 2015-11-17 2018-07-10 Applied Materials, Inc. Substrate support assembly with deposited surface features
US10791761B2 (en) * 2017-08-17 2020-10-06 Rai Strategic Holdings, Inc. Microtextured liquid transport element for aerosol delivery device
JP7027219B2 (ja) * 2018-03-28 2022-03-01 京セラ株式会社 試料保持具
JP7240499B2 (ja) * 2019-07-16 2023-03-15 日本碍子株式会社 シャフト付きセラミックヒータ
KR102655140B1 (ko) * 2020-09-14 2024-04-05 엔지케이 인슐레이터 엘티디 복합 소결체, 반도체 제조 장치 부재 및 복합 소결체의 제조 방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03236186A (ja) 1990-02-09 1991-10-22 Toshiba Corp セラミックスヒータ
EP0493089B1 (de) * 1990-12-25 1998-09-16 Ngk Insulators, Ltd. Heizungsapparat für eine Halbleiterscheibe und Verfahren zum Herstellen desselben
JPH06140132A (ja) 1992-10-28 1994-05-20 Shin Etsu Chem Co Ltd 複層セラミックスヒーター
JPH06157172A (ja) 1992-11-16 1994-06-03 Shin Etsu Chem Co Ltd セラミックスヒーター
JPH08227933A (ja) 1995-02-20 1996-09-03 Shin Etsu Chem Co Ltd 静電吸着機能を有するウエハ加熱装置
JP3481717B2 (ja) * 1995-03-20 2003-12-22 信越化学工業株式会社 静電吸着機能を有するウエハ加熱装置
JPH11168134A (ja) * 1997-12-03 1999-06-22 Shin Etsu Chem Co Ltd 静電吸着装置およびその製造方法
JPH11343571A (ja) * 1998-05-29 1999-12-14 Ngk Insulators Ltd サセプター
JP2000114358A (ja) * 1998-10-05 2000-04-21 Tomoegawa Paper Co Ltd 静電チャック装置
JP2001332525A (ja) * 2000-05-25 2001-11-30 Sumitomo Osaka Cement Co Ltd セラミックスヒータ
US6444957B1 (en) 2000-04-26 2002-09-03 Sumitomo Osaka Cement Co., Ltd Heating apparatus
US20020185487A1 (en) * 2001-05-02 2002-12-12 Ramesh Divakar Ceramic heater with heater element and method for use thereof
JP4026759B2 (ja) 2002-11-18 2007-12-26 日本碍子株式会社 加熱装置
US7369393B2 (en) * 2004-04-15 2008-05-06 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chucks having barrier layer
JP4654153B2 (ja) * 2006-04-13 2011-03-16 信越化学工業株式会社 加熱素子

Also Published As

Publication number Publication date
EP2071610B1 (de) 2010-11-03
JP5236927B2 (ja) 2013-07-17
KR101502925B1 (ko) 2015-03-17
US8829397B2 (en) 2014-09-09
EP2071610A3 (de) 2009-08-19
JP2009111005A (ja) 2009-05-21
KR20150006405A (ko) 2015-01-16
KR20090042708A (ko) 2009-04-30
EP2071610A2 (de) 2009-06-17
TW200937995A (en) 2009-09-01
US20090107635A1 (en) 2009-04-30

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