DE602007002733D1 - Positive Resistzusammensetzung und Verfahren zur Strukturformung damit - Google Patents
Positive Resistzusammensetzung und Verfahren zur Strukturformung damitInfo
- Publication number
- DE602007002733D1 DE602007002733D1 DE602007002733T DE602007002733T DE602007002733D1 DE 602007002733 D1 DE602007002733 D1 DE 602007002733D1 DE 602007002733 T DE602007002733 T DE 602007002733T DE 602007002733 T DE602007002733 T DE 602007002733T DE 602007002733 D1 DE602007002733 D1 DE 602007002733D1
- Authority
- DE
- Germany
- Prior art keywords
- resist composition
- positive resist
- repeating unit
- unit containing
- structural molding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006075067 | 2006-03-17 | ||
JP2006245681A JP4705897B2 (ja) | 2006-03-17 | 2006-09-11 | ポジ型レジスト組成物及び該ポジ型レジスト組成物を用いたパターン形成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602007002733D1 true DE602007002733D1 (de) | 2009-11-26 |
Family
ID=37959017
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602007002733T Active DE602007002733D1 (de) | 2006-03-17 | 2007-03-14 | Positive Resistzusammensetzung und Verfahren zur Strukturformung damit |
Country Status (7)
Country | Link |
---|---|
US (1) | US7632623B2 (de) |
EP (1) | EP1835343B1 (de) |
JP (1) | JP4705897B2 (de) |
KR (1) | KR101169313B1 (de) |
AT (1) | ATE445862T1 (de) |
DE (1) | DE602007002733D1 (de) |
TW (1) | TWI396050B (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1479881B1 (de) * | 2002-02-05 | 2017-05-10 | Ibiden Co., Ltd. | Wabenfilter für abgasreinigung, klebstoff, beschichtungsmaterial und verfahren zur herstellung eines wabenfilters zur abgasreinigung |
JP5333227B2 (ja) * | 2007-09-27 | 2013-11-06 | Jsr株式会社 | 感放射線性組成物、及びフォトレジストパターンの形成方法 |
JP5331358B2 (ja) * | 2008-03-28 | 2013-10-30 | 富士フイルム株式会社 | ポジ型レジスト組成物の製造方法、ポジ型レジスト組成物、およびパターン形成方法 |
JP5806800B2 (ja) * | 2008-03-28 | 2015-11-10 | 富士フイルム株式会社 | ポジ型レジスト組成物およびそれを用いたパターン形成方法 |
KR100959841B1 (ko) * | 2008-04-14 | 2010-05-27 | 금호석유화학 주식회사 | 화학증폭형 포토레지스트용 공중합체 및 이를 포함하는포토레지스트 조성물 |
JP5997873B2 (ja) * | 2008-06-30 | 2016-09-28 | 富士フイルム株式会社 | 感光性組成物及びそれを用いたパターン形成方法 |
JP6832104B2 (ja) * | 2016-09-20 | 2021-02-24 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
JP2022088041A (ja) * | 2020-12-02 | 2022-06-14 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3676918B2 (ja) | 1997-10-09 | 2005-07-27 | 富士通株式会社 | レジスト材料及びレジストパターンの形成方法 |
JP2001194786A (ja) * | 1999-07-12 | 2001-07-19 | Fuji Photo Film Co Ltd | 遠紫外線露光用ポジ型フォトレジスト組成物 |
US6635401B2 (en) | 2001-06-21 | 2003-10-21 | International Business Machines Corporation | Resist compositions with polymers having 2-cyano acrylic monomer |
US7232638B2 (en) | 2002-05-02 | 2007-06-19 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
JP4225806B2 (ja) | 2003-03-04 | 2009-02-18 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
JP4502308B2 (ja) * | 2003-05-06 | 2010-07-14 | 三菱レイヨン株式会社 | 共重合体 |
JP4114067B2 (ja) | 2003-06-19 | 2008-07-09 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
JP4315761B2 (ja) * | 2003-07-31 | 2009-08-19 | 三菱レイヨン株式会社 | (共)重合体、製造方法、レジスト組成物およびパターン形成方法 |
JP2005087665A (ja) | 2003-09-12 | 2005-04-07 | Masaki Tada | スライド式ステップ台車椅子 |
TWI402276B (zh) * | 2004-03-08 | 2013-07-21 | Mitsubishi Rayon Co | 光阻用聚合物、光阻組成物及圖案製造方法與光阻用聚合物用原料化合物 |
US7906268B2 (en) | 2004-03-18 | 2011-03-15 | Fujifilm Corporation | Positive resist composition for immersion exposure and pattern-forming method using the same |
TWI375121B (en) * | 2004-06-28 | 2012-10-21 | Fujifilm Corp | Photosensitive composition and method for forming pattern using the same |
TWI368825B (en) | 2004-07-07 | 2012-07-21 | Fujifilm Corp | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same |
TWI403843B (zh) | 2005-09-13 | 2013-08-01 | Fujifilm Corp | 正型光阻組成物及使用它之圖案形成方法 |
KR20130133095A (ko) * | 2005-09-28 | 2013-12-05 | 가부시끼가이샤 다이셀 | 시아노기 및 락톤 골격을 포함하는 다환식 에스테르 |
JP4866605B2 (ja) * | 2005-12-28 | 2012-02-01 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物 |
-
2006
- 2006-09-11 JP JP2006245681A patent/JP4705897B2/ja active Active
-
2007
- 2007-03-13 US US11/717,083 patent/US7632623B2/en active Active
- 2007-03-14 EP EP07005242A patent/EP1835343B1/de active Active
- 2007-03-14 AT AT07005242T patent/ATE445862T1/de not_active IP Right Cessation
- 2007-03-14 DE DE602007002733T patent/DE602007002733D1/de active Active
- 2007-03-16 KR KR1020070026007A patent/KR101169313B1/ko active IP Right Grant
- 2007-03-16 TW TW096109035A patent/TWI396050B/zh active
Also Published As
Publication number | Publication date |
---|---|
US7632623B2 (en) | 2009-12-15 |
TWI396050B (zh) | 2013-05-11 |
EP1835343A1 (de) | 2007-09-19 |
EP1835343B1 (de) | 2009-10-14 |
KR20070094547A (ko) | 2007-09-20 |
US20070218405A1 (en) | 2007-09-20 |
JP2007279662A (ja) | 2007-10-25 |
TW200801812A (en) | 2008-01-01 |
KR101169313B1 (ko) | 2012-07-30 |
JP4705897B2 (ja) | 2011-06-22 |
ATE445862T1 (de) | 2009-10-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |