DE602006017371D1 - Avalanche-fotodiode - Google Patents

Avalanche-fotodiode

Info

Publication number
DE602006017371D1
DE602006017371D1 DE602006017371T DE602006017371T DE602006017371D1 DE 602006017371 D1 DE602006017371 D1 DE 602006017371D1 DE 602006017371 T DE602006017371 T DE 602006017371T DE 602006017371 T DE602006017371 T DE 602006017371T DE 602006017371 D1 DE602006017371 D1 DE 602006017371D1
Authority
DE
Germany
Prior art keywords
avalanche photodiode
avalanche
photodiode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006017371T
Other languages
English (en)
Inventor
Tadao Ishibashi
Seigo Ando
Yukihiro Hirota
Yoshifumi Muramoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Electronics Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NTT Electronics Corp
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NTT Electronics Corp, Nippon Telegraph and Telephone Corp filed Critical NTT Electronics Corp
Publication of DE602006017371D1 publication Critical patent/DE602006017371D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
DE602006017371T 2005-06-27 2006-06-27 Avalanche-fotodiode Active DE602006017371D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005186551A JP4234116B2 (ja) 2005-06-27 2005-06-27 アバランシ・フォトダイオード
PCT/JP2006/312800 WO2007000996A1 (ja) 2005-06-27 2006-06-27 アバランシ・フォトダイオード

Publications (1)

Publication Number Publication Date
DE602006017371D1 true DE602006017371D1 (de) 2010-11-18

Family

ID=37595245

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006017371T Active DE602006017371D1 (de) 2005-06-27 2006-06-27 Avalanche-fotodiode

Country Status (5)

Country Link
US (1) US7880197B2 (de)
EP (1) EP1898472B1 (de)
JP (1) JP4234116B2 (de)
DE (1) DE602006017371D1 (de)
WO (1) WO2007000996A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010135360A (ja) * 2008-12-02 2010-06-17 Mitsubishi Electric Corp アバランシェフォトダイオード
JP4728386B2 (ja) 2008-12-17 2011-07-20 Ｎｔｔエレクトロニクス株式会社 アバランシ・フォトダイオード
JP5271104B2 (ja) 2009-02-13 2013-08-21 浜松ホトニクス株式会社 リニアイメージセンサ
JP5091886B2 (ja) 2009-02-13 2012-12-05 浜松ホトニクス株式会社 イメージセンサ
JP5357793B2 (ja) * 2010-01-29 2013-12-04 日本放送協会 光導電ターゲット及びこれを用いた撮像管、撮像デバイス
JP5631668B2 (ja) 2010-09-02 2014-11-26 Ｎｔｔエレクトロニクス株式会社 アバランシ・フォトダイオード
JP5327892B2 (ja) 2010-09-02 2013-10-30 Ｎｔｔエレクトロニクス株式会社 アバランシ・フォトダイオード
US8816461B2 (en) * 2011-09-13 2014-08-26 The Boeing Company Dichromatic photodiodes
US9160949B2 (en) 2013-04-01 2015-10-13 Omnivision Technologies, Inc. Enhanced photon detection device with biased deep trench isolation
JP2015211166A (ja) * 2014-04-28 2015-11-24 日本電信電話株式会社 半導体受光素子及びその製造方法
US10032950B2 (en) 2016-02-22 2018-07-24 University Of Virginia Patent Foundation AllnAsSb avalanche photodiode and related method thereof
US9466751B1 (en) * 2016-03-04 2016-10-11 National Central University Avalanche photodiode having electric-field confinement by mesas
JP6705762B2 (ja) * 2017-03-14 2020-06-03 日本電信電話株式会社 アバランシェフォトダイオード
CN106887469B (zh) * 2017-03-22 2019-05-07 武汉光谷量子技术有限公司 一种雪崩二极管的外延结构及雪崩二极管的制造方法
CN107749424B (zh) * 2017-10-24 2023-11-07 江门市奥伦德光电有限公司 一种雪崩光电二极管及其制备方法
US11101400B2 (en) * 2017-11-28 2021-08-24 Luxtera Llc Method and system for a focused field avalanche photodiode
JP7081551B2 (ja) * 2019-03-28 2022-06-07 日本電信電話株式会社 アバランシェフォトダイオードおよびその製造方法
CN112447875B (zh) * 2019-08-30 2024-03-08 光程研创(美商)股份有限公司 雪崩式的光电晶体元件及其光检测方法
CN110690314B (zh) * 2019-09-05 2023-06-27 中国电子科技集团公司第十三研究所 吸收层与倍增层为分离结构的紫外探测器及其制备方法
US20220399471A1 (en) 2019-11-18 2022-12-15 Nippon Telegraph And Telephone Corporation Optical Receiving Element and Manufacturing Method Therefor
US11056604B1 (en) * 2020-02-18 2021-07-06 National Central University Photodiode of avalanche breakdown having mixed composite charge layer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2934294B2 (ja) * 1990-04-09 1999-08-16 日本電信電話株式会社 アバランシェフォトダイオード
JP2845081B2 (ja) 1993-04-07 1999-01-13 日本電気株式会社 半導体受光素子
JP2601231B2 (ja) * 1994-12-22 1997-04-16 日本電気株式会社 超格子アバランシェフォトダイオード
JPH11330536A (ja) 1998-05-13 1999-11-30 Nec Corp 半導体受光素子
JP3141847B2 (ja) 1998-07-03 2001-03-07 日本電気株式会社 アバランシェフォトダイオード
JP4191564B2 (ja) 2003-09-10 2008-12-03 Ｎｔｔエレクトロニクス株式会社 アバランシ・フォトダイオード
JP2005223022A (ja) 2004-02-03 2005-08-18 Ntt Electornics Corp アバランシ・フォトダイオード

Also Published As

Publication number Publication date
JP4234116B2 (ja) 2009-03-04
JP2007005697A (ja) 2007-01-11
WO2007000996A1 (ja) 2007-01-04
US7880197B2 (en) 2011-02-01
EP1898472B1 (de) 2010-10-06
US20100163925A1 (en) 2010-07-01
EP1898472A1 (de) 2008-03-12
EP1898472A4 (de) 2008-06-25

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: NTT ELECTRONICS CORP., YOKOHAMA, KANAGAWA, JP

Owner name: NIPPON TELEGRAPH AND TELEPHONE CORP., TOKIO/TO, JP