HK1113520A1 - Planar avalanche photodiode - Google Patents

Planar avalanche photodiode

Info

Publication number
HK1113520A1
HK1113520A1 HK08102803.5A HK08102803A HK1113520A1 HK 1113520 A1 HK1113520 A1 HK 1113520A1 HK 08102803 A HK08102803 A HK 08102803A HK 1113520 A1 HK1113520 A1 HK 1113520A1
Authority
HK
Hong Kong
Prior art keywords
avalanche photodiode
planar avalanche
planar
photodiode
avalanche
Prior art date
Application number
HK08102803.5A
Inventor
Cheng C Ko
Barry Levine
Original Assignee
Picometrix Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Picometrix Llc filed Critical Picometrix Llc
Publication of HK1113520A1 publication Critical patent/HK1113520A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
HK08102803.5A 2004-04-30 2008-03-11 Planar avalanche photodiode HK1113520A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2004/013584 WO2005114712A1 (en) 2004-04-30 2004-04-30 Planar avalanche photodiode

Publications (1)

Publication Number Publication Date
HK1113520A1 true HK1113520A1 (en) 2008-10-03

Family

ID=35428612

Family Applications (1)

Application Number Title Priority Date Filing Date
HK08102803.5A HK1113520A1 (en) 2004-04-30 2008-03-11 Planar avalanche photodiode

Country Status (6)

Country Link
EP (1) EP1741127A4 (en)
JP (1) JP2007535810A (en)
CN (1) CN100541721C (en)
CA (1) CA2564218A1 (en)
HK (1) HK1113520A1 (en)
WO (1) WO2005114712A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5025330B2 (en) 2007-05-22 2012-09-12 三菱電機株式会社 Semiconductor light receiving element and manufacturing method thereof
US8232586B2 (en) * 2009-08-12 2012-07-31 Globalfoundries Inc. Silicon photon detector
US20150115319A1 (en) * 2012-05-17 2015-04-30 Picometrix, Llc Planar avalanche photodiode
CN104198909B (en) * 2014-09-15 2016-11-23 华东光电集成器件研究所 A kind of measuring method of mesa avalanche diode chip area
US10921369B2 (en) * 2017-01-05 2021-02-16 Xcalipr Corporation High precision optical characterization of carrier transport properties in semiconductors
WO2019053877A1 (en) * 2017-09-15 2019-03-21 三菱電機株式会社 Semiconductor light-receiving element and manufacturing method thereof
US10854768B2 (en) * 2018-12-20 2020-12-01 Hewlett Packard Enterprise Development Lp Optoelectronic component with current deflected to high-gain paths comprising an avalanche photodiode having an absorbing region on a p-doped lateral boundary, an n-doped lateral boundary and an amplifying region
CN110690314B (en) * 2019-09-05 2023-06-27 中国电子科技集团公司第十三研究所 Ultraviolet detector with absorption layer and multiplication layer in separate structures and preparation method thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02262378A (en) * 1989-04-03 1990-10-25 Toshiba Corp Manufacture of semiconductor photodetector
JPH0389566A (en) * 1989-08-31 1991-04-15 Nec Corp Superlattice avalanche photodiode
US5126281A (en) * 1990-09-11 1992-06-30 Hewlett-Packard Company Diffusion using a solid state source
US6548878B1 (en) * 1998-02-05 2003-04-15 Integration Associates, Inc. Method for producing a thin distributed photodiode structure
JP4095746B2 (en) * 1999-12-17 2008-06-04 日本オプネクスト株式会社 Semiconductor light receiving device and manufacturing method
JP4058921B2 (en) * 2001-08-01 2008-03-12 日本電気株式会社 Semiconductor photo detector
US7348607B2 (en) * 2002-02-01 2008-03-25 Picometrix, Llc Planar avalanche photodiode
KR100766174B1 (en) * 2002-02-01 2007-10-10 피코메트릭스 인코포레이티드 Enhanced photodetector
US6794631B2 (en) * 2002-06-07 2004-09-21 Corning Lasertron, Inc. Three-terminal avalanche photodiode

Also Published As

Publication number Publication date
EP1741127A1 (en) 2007-01-10
WO2005114712A1 (en) 2005-12-01
JP2007535810A (en) 2007-12-06
EP1741127A4 (en) 2009-04-22
CN100541721C (en) 2009-09-16
CA2564218A1 (en) 2005-12-01
CN101036216A (en) 2007-09-12

Similar Documents

Publication Publication Date Title
EP1898472A4 (en) Avalanche photodiode
GB2454607B (en) Inverted planar avalanche photodiode
EP1840967A4 (en) Photodiode array
EP1470575A4 (en) Planar avalanche photodiode
EP1713133A4 (en) Avalanche photodiode
EP1775859A4 (en) Photodetector
EP1898471A4 (en) Avalanche photo diode
GB2426065B (en) Detector
EP1717842A4 (en) Photomultiplier
EP1726928A4 (en) Photodetector
IL176777A (en) Photodetection system
GB2420820B (en) Improved attachment device
HK1113520A1 (en) Planar avalanche photodiode
EP1791004A4 (en) Photodiode
EP1741379A4 (en) Receiving device
EP1767911A4 (en) Photodetector
GB2412235B (en) An optoelectronic device
EP1728282A4 (en) Photodetector
GB0413257D0 (en) Backpack
EP1712886A4 (en) Photodetector device
GB0409689D0 (en) Retaining device
GB2416595B (en) Peak detector
EP2026386A4 (en) Microchannel avalanche photodiode
GB2412231B (en) Photomultiplier
GB0506035D0 (en) Improved formulation

Legal Events

Date Code Title Description
PE Patent expired

Effective date: 20240427