DE602006011937D1 - Titankomplexe, verfahren zu deren herstellung, titanhaltige dünne filme und verfahren zu deren bildung - Google Patents

Titankomplexe, verfahren zu deren herstellung, titanhaltige dünne filme und verfahren zu deren bildung

Info

Publication number
DE602006011937D1
DE602006011937D1 DE602006011937T DE602006011937T DE602006011937D1 DE 602006011937 D1 DE602006011937 D1 DE 602006011937D1 DE 602006011937 T DE602006011937 T DE 602006011937T DE 602006011937 T DE602006011937 T DE 602006011937T DE 602006011937 D1 DE602006011937 D1 DE 602006011937D1
Authority
DE
Germany
Prior art keywords
titanium
formation
production
thin films
complexes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006011937T
Other languages
English (en)
Inventor
Ken-Ichi Tada
Koichiro Inaba
Taishi Furukawa
Hirokazu Chiba
Tetsu Yamakawa
Noriaki Oshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sagami Chemical Research Institute
Tosoh Corp
Original Assignee
Sagami Chemical Research Institute
Tosoh Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sagami Chemical Research Institute, Tosoh Corp filed Critical Sagami Chemical Research Institute
Publication of DE602006011937D1 publication Critical patent/DE602006011937D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/28—Titanium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C211/00—Compounds containing amino groups bound to a carbon skeleton
    • C07C211/65—Metal complexes of amines
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
    • C07C251/02—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups
    • C07C251/04—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms
    • C07C251/06—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of a saturated carbon skeleton
    • C07C251/08—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of a saturated carbon skeleton being acyclic
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/003—Compounds containing elements of Groups 4 or 14 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
DE602006011937T 2005-11-11 2006-11-01 Titankomplexe, verfahren zu deren herstellung, titanhaltige dünne filme und verfahren zu deren bildung Active DE602006011937D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005326885 2005-11-11
PCT/JP2006/321880 WO2007055140A1 (ja) 2005-11-11 2006-11-01 チタン錯体、それらの製造方法、チタン含有薄膜及びそれらの形成方法

Publications (1)

Publication Number Publication Date
DE602006011937D1 true DE602006011937D1 (de) 2010-03-11

Family

ID=38023145

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006011937T Active DE602006011937D1 (de) 2005-11-11 2006-11-01 Titankomplexe, verfahren zu deren herstellung, titanhaltige dünne filme und verfahren zu deren bildung

Country Status (8)

Country Link
US (1) US7632958B2 (de)
EP (1) EP1947081B1 (de)
JP (1) JP4980679B2 (de)
KR (1) KR20080066031A (de)
CN (1) CN101304964B (de)
DE (1) DE602006011937D1 (de)
TW (1) TWI373472B (de)
WO (1) WO2007055140A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8802194B2 (en) 2008-05-29 2014-08-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Tellurium precursors for film deposition
JP5424715B2 (ja) * 2008-06-23 2014-02-26 東ソー株式会社 チタン錯体、その製造方法、チタン含有薄膜及びその製法
US8636845B2 (en) * 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
JP2012533680A (ja) 2009-07-14 2012-12-27 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 高温でのｉｖ族金属含有膜の堆積
US20110206862A1 (en) * 2010-02-03 2011-08-25 L'air Liquide, Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude Titanium Nitride Film Deposition by Vapor Deposition Using Cyclopentadienyl Alkylamino Titanium Precursors
CN103917487A (zh) * 2011-09-05 2014-07-09 东曹株式会社 制膜用材料、iv族金属氧化物膜和亚乙烯基二酰胺络合物
JP6097754B2 (ja) 2011-09-27 2017-03-15 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ニッケル含有膜を堆積させる方法、及びニッケルケイ化物膜を堆積させるａｌｄ方法
US9790591B2 (en) 2015-11-30 2017-10-17 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Titanium-containing film forming compositions for vapor deposition of titanium-containing films
TWI736631B (zh) * 2016-06-06 2021-08-21 韋恩州立大學 二氮雜二烯錯合物與胺類的反應
KR102232509B1 (ko) * 2018-01-12 2021-03-25 삼성에스디아이 주식회사 유기 금속 화합물, 반도체 박막 증착용 조성물, 유기 금속 화합물을 이용한 박막의 제조 방법, 및 박막을 포함하는 반도체 소자
WO2024038602A1 (ja) * 2022-08-19 2024-02-22 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5908947A (en) * 1996-02-09 1999-06-01 Micron Technology, Inc. Difunctional amino precursors for the deposition of films comprising metals
US5659057A (en) * 1996-02-09 1997-08-19 Micron Technology, Inc. Five- and six-coordinate precursors for titanium nitride deposition
US5607722A (en) * 1996-02-09 1997-03-04 Micron Technology, Inc. Process for titanium nitride deposition using five-and six-coordinate titanium complexes
JP4325595B2 (ja) 2002-07-18 2009-09-02 セイコーエプソン株式会社 発光装置及び電子機器
US6861559B2 (en) * 2002-12-10 2005-03-01 Board Of Trustees Of Michigan State University Iminoamines and preparation thereof
JP4206747B2 (ja) 2002-12-19 2009-01-14 旭硝子株式会社 酸化チタン膜の製造方法
JP2006093551A (ja) 2004-09-27 2006-04-06 Ulvac Japan Ltd チタン含有膜の形成方法
JP4538344B2 (ja) 2005-03-01 2010-09-08 日本分光株式会社 軸方位測定装置および方法

Also Published As

Publication number Publication date
US20090036697A1 (en) 2009-02-05
JP4980679B2 (ja) 2012-07-18
EP1947081A1 (de) 2008-07-23
EP1947081B1 (de) 2010-01-20
JP2007153872A (ja) 2007-06-21
CN101304964A (zh) 2008-11-12
TWI373472B (en) 2012-10-01
EP1947081A4 (de) 2008-10-22
CN101304964B (zh) 2011-10-19
KR20080066031A (ko) 2008-07-15
TW200728314A (en) 2007-08-01
WO2007055140A1 (ja) 2007-05-18
US7632958B2 (en) 2009-12-15

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