DE602006006959D1 - Verfahren zur Dampfphasenabscheidung von dünnen Schichten der Dialkylamidodihydroaluminium-Verbindung - Google Patents

Verfahren zur Dampfphasenabscheidung von dünnen Schichten der Dialkylamidodihydroaluminium-Verbindung

Info

Publication number
DE602006006959D1
DE602006006959D1 DE602006006959T DE602006006959T DE602006006959D1 DE 602006006959 D1 DE602006006959 D1 DE 602006006959D1 DE 602006006959 T DE602006006959 T DE 602006006959T DE 602006006959 T DE602006006959 T DE 602006006959T DE 602006006959 D1 DE602006006959 D1 DE 602006006959D1
Authority
DE
Germany
Prior art keywords
dialkylamidodihydroaluminum
compound
vapor phase
thin layers
phase deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE602006006959T
Other languages
English (en)
Inventor
Hyun Koock Shin
Bum Soo Kim
Jin Sik Kim
Jun Young Kim
Young Seop Kim
Bo Yearn Cho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UP Chemical Co Ltd
Original Assignee
UP Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UP Chemical Co Ltd filed Critical UP Chemical Co Ltd
Publication of DE602006006959D1 publication Critical patent/DE602006006959D1/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20—Deposition of aluminium only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
DE602006006959T 2005-11-16 2006-11-16 Verfahren zur Dampfphasenabscheidung von dünnen Schichten der Dialkylamidodihydroaluminium-Verbindung Expired - Fee Related DE602006006959D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050109881A KR100724084B1 (ko) 2005-11-16 2005-11-16 디알킬아미도디하이드로알루미늄 화합물을 이용한 박막증착방법

Publications (1)

Publication Number Publication Date
DE602006006959D1 true DE602006006959D1 (de) 2009-07-09

Family

ID=37708344

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006006959T Expired - Fee Related DE602006006959D1 (de) 2005-11-16 2006-11-16 Verfahren zur Dampfphasenabscheidung von dünnen Schichten der Dialkylamidodihydroaluminium-Verbindung

Country Status (7)

Country Link
US (1) US7985450B2 (de)
EP (1) EP1788116B1 (de)
JP (1) JP2007138296A (de)
KR (1) KR100724084B1 (de)
CN (1) CN101029384B (de)
DE (1) DE602006006959D1 (de)
TW (1) TW200823311A (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9194041B2 (en) 2011-11-02 2015-11-24 Ube Industries, Ltd. Tris(dialkylamide)aluminum compound, and method for producing aluminum-containing thin film using same
US8927059B2 (en) * 2011-11-08 2015-01-06 Applied Materials, Inc. Deposition of metal films using alane-based precursors
US9234112B2 (en) 2013-06-05 2016-01-12 Korea Institute Of Machinery & Materials Metal precursor powder, method of manufacturing conductive metal layer or pattern, and device including the same
KR102627458B1 (ko) 2016-09-13 2024-01-19 삼성전자주식회사 알루미늄 화합물과 이를 이용한 박막 형성 방법 및 집적회로 소자의 제조 방법
WO2019120650A1 (en) 2017-12-20 2019-06-27 Basf Se Process for the generation of metal-containing films
CN112513053B (zh) * 2018-07-30 2024-02-23 Up化学株式会社 铝化合物和使用该铝化合物形成含铝膜的方法
KR20200080478A (ko) 2018-12-26 2020-07-07 삼성전자주식회사 알루미늄 화합물 및 이를 이용한 반도체 소자의 제조 방법
WO2021099249A1 (en) 2019-11-22 2021-05-27 Basf Se Process for the generation of metal- or semimetal-containing films
CN115279940B (zh) * 2020-02-24 2024-04-09 Up化学株式会社 铝前体化合物、其制备方法和使用其形成含铝膜的方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3320296A (en) * 1962-08-23 1967-05-16 Neil R Fetter Method for preparation of compounds with the formula r2al-n(ch3)2
US5178911A (en) * 1989-11-30 1993-01-12 The President And Fellows Of Harvard College Process for chemical vapor deposition of main group metal nitrides
EP0448223B1 (de) * 1990-02-19 1996-06-26 Canon Kabushiki Kaisha Verfahren zum Herstellen von abgeschiedener Metallschicht, die Aluminium als Hauptkomponente enthält, mit Anwendung von Alkylaluminiumhydrid
US5191099A (en) * 1991-09-05 1993-03-02 Regents Of The University Of Minnesota Chemical vapor deposition of aluminum films using dimethylethylamine alane
CN1072391C (zh) * 1996-12-10 2001-10-03 联华电子股份有限公司 选择性化学气相沉积形成铝接触栓的方法
KR100279067B1 (ko) * 1998-04-23 2001-01-15 신현국 화학증착용알루미늄화합물및그제조방법
KR100289945B1 (ko) 1998-09-15 2001-09-17 신현국 알루미늄박막의화학증착용전구체화합물및이의제조방법
KR100289947B1 (ko) * 1998-09-28 2001-05-15 신현국 고유전성박막증착용전구체착화합물및그를이용한박막증착방법
US6238734B1 (en) * 1999-07-08 2001-05-29 Air Products And Chemicals, Inc. Liquid precursor mixtures for deposition of multicomponent metal containing materials
JP2001035919A (ja) * 1999-07-19 2001-02-09 Matsushita Electronics Industry Corp 半導体装置およびその製造方法
JP2001053023A (ja) * 1999-08-11 2001-02-23 Tokyo Electron Ltd 半導体装置の製造方法及び製造装置
US7005392B2 (en) * 2001-03-30 2006-02-28 Advanced Technology Materials, Inc. Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
US7141500B2 (en) * 2003-06-05 2006-11-28 American Air Liquide, Inc. Methods for forming aluminum containing films utilizing amino aluminum precursors
KR20050091488A (ko) * 2004-03-12 2005-09-15 주식회사 유피케미칼 세라믹 또는 금속박막 증착용 전구체 화합물 및 그제조방법

Also Published As

Publication number Publication date
KR20070052161A (ko) 2007-05-21
KR100724084B1 (ko) 2007-06-04
TW200823311A (en) 2008-06-01
US7985450B2 (en) 2011-07-26
CN101029384B (zh) 2011-03-02
EP1788116B1 (de) 2009-05-27
US20100099257A1 (en) 2010-04-22
CN101029384A (zh) 2007-09-05
EP1788116A1 (de) 2007-05-23
JP2007138296A (ja) 2007-06-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee