DE602005025263D1 - Plasmaätzverfahren und Ätzkammer - Google Patents

Plasmaätzverfahren und Ätzkammer

Info

Publication number
DE602005025263D1
DE602005025263D1 DE602005025263T DE602005025263T DE602005025263D1 DE 602005025263 D1 DE602005025263 D1 DE 602005025263D1 DE 602005025263 T DE602005025263 T DE 602005025263T DE 602005025263 T DE602005025263 T DE 602005025263T DE 602005025263 D1 DE602005025263 D1 DE 602005025263D1
Authority
DE
Germany
Prior art keywords
etching
substrate
chamber
etching chamber
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005025263T
Other languages
English (en)
Inventor
Jeff Alistair Hill
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PVA TePla AG
Original Assignee
PVA TePla AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PVA TePla AG filed Critical PVA TePla AG
Publication of DE602005025263D1 publication Critical patent/DE602005025263D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
DE602005025263T 2005-10-05 2005-10-05 Plasmaätzverfahren und Ätzkammer Active DE602005025263D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2005/010741 WO2007038967A1 (en) 2005-10-05 2005-10-05 Down-stream plasma etching with deflectable plasma beam

Publications (1)

Publication Number Publication Date
DE602005025263D1 true DE602005025263D1 (de) 2011-01-20

Family

ID=35539368

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005025263T Active DE602005025263D1 (de) 2005-10-05 2005-10-05 Plasmaätzverfahren und Ätzkammer

Country Status (8)

Country Link
US (1) US8187484B2 (de)
EP (1) EP1949406B1 (de)
JP (1) JP4897798B2 (de)
KR (1) KR101165594B1 (de)
AT (1) ATE491220T1 (de)
DE (1) DE602005025263D1 (de)
TW (1) TWI334175B (de)
WO (1) WO2007038967A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102152858B1 (ko) * 2013-03-12 2020-09-07 어플라이드 머티어리얼스, 인코포레이티드 방위각 및 방사상 분배 제어되는 다중-구역 가스 주입 조립체
US10709497B2 (en) 2017-09-22 2020-07-14 Covidien Lp Electrosurgical tissue sealing device with non-stick coating
US11207124B2 (en) 2019-07-08 2021-12-28 Covidien Lp Electrosurgical system for use with non-stick coated electrodes

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2913657B2 (ja) * 1989-03-25 1999-06-28 ソニー株式会社 成膜方法、エッチング方法及びプラズマ装置
JP3203754B2 (ja) * 1992-03-30 2001-08-27 住友電気工業株式会社 ダイヤモンドの製造法および製造装置
US5522934A (en) * 1994-04-26 1996-06-04 Tokyo Electron Limited Plasma processing apparatus using vertical gas inlets one on top of another
US5614026A (en) 1996-03-29 1997-03-25 Lam Research Corporation Showerhead for uniform distribution of process gas
US6706334B1 (en) 1997-06-04 2004-03-16 Tokyo Electron Limited Processing method and apparatus for removing oxide film
US6203657B1 (en) * 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
US6793733B2 (en) * 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
DE60329344D1 (de) 2002-03-08 2009-11-05 Canon Anelva Corp Verfahren und Vorrichtung zum Herstellen von Metall-Schichten
KR100500246B1 (ko) 2003-04-09 2005-07-11 삼성전자주식회사 가스공급장치
KR100561848B1 (ko) * 2003-11-04 2006-03-16 삼성전자주식회사 헬리컬 공진기형 플라즈마 처리 장치

Also Published As

Publication number Publication date
JP2008543095A (ja) 2008-11-27
WO2007038967A1 (en) 2007-04-12
KR101165594B1 (ko) 2012-07-23
US8187484B2 (en) 2012-05-29
TW200719407A (en) 2007-05-16
EP1949406A1 (de) 2008-07-30
KR20080054390A (ko) 2008-06-17
TWI334175B (en) 2010-12-01
EP1949406B1 (de) 2010-12-08
US20090242514A1 (en) 2009-10-01
JP4897798B2 (ja) 2012-03-14
ATE491220T1 (de) 2010-12-15

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