DE602005006123D1 - Verfahren zur Herstellung eines integrierten Bauelements mit einer Festkörperelektrolyt-Struktur - Google Patents

Verfahren zur Herstellung eines integrierten Bauelements mit einer Festkörperelektrolyt-Struktur

Info

Publication number
DE602005006123D1
DE602005006123D1 DE602005006123T DE602005006123T DE602005006123D1 DE 602005006123 D1 DE602005006123 D1 DE 602005006123D1 DE 602005006123 T DE602005006123 T DE 602005006123T DE 602005006123 T DE602005006123 T DE 602005006123T DE 602005006123 D1 DE602005006123 D1 DE 602005006123D1
Authority
DE
Germany
Prior art keywords
producing
solid electrolyte
integrated component
electrolyte structure
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005006123T
Other languages
English (en)
Other versions
DE602005006123T2 (de
Inventor
Cay-Uwe Pinnow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qimonda AG
Original Assignee
Qimonda AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qimonda AG filed Critical Qimonda AG
Publication of DE602005006123D1 publication Critical patent/DE602005006123D1/de
Application granted granted Critical
Publication of DE602005006123T2 publication Critical patent/DE602005006123T2/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H10N70/043—Modification of switching materials after formation, e.g. doping by implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Conductive Materials (AREA)
DE602005006123T 2005-08-08 2005-08-08 Verfahren zur Herstellung eines integrierten Bauelements mit einer Festkörperelektrolyt-Struktur Active DE602005006123T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05017242A EP1753045B1 (de) 2005-08-08 2005-08-08 Verfahren zur Herstellung eines integrierten Bauelements mit einer Festkörperelektrolyt-Struktur

Publications (2)

Publication Number Publication Date
DE602005006123D1 true DE602005006123D1 (de) 2008-05-29
DE602005006123T2 DE602005006123T2 (de) 2009-05-07

Family

ID=35697093

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005006123T Active DE602005006123T2 (de) 2005-08-08 2005-08-08 Verfahren zur Herstellung eines integrierten Bauelements mit einer Festkörperelektrolyt-Struktur

Country Status (2)

Country Link
EP (1) EP1753045B1 (de)
DE (1) DE602005006123T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010029082A1 (de) * 2010-05-18 2011-11-24 Eva Schwartz Durchlaufofen zum Erwärmen von Werkstücken mit hoher Aufheizrate im Eingangsbereich

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3056821B1 (fr) 2016-09-29 2018-11-23 Paris Sciences Et Lettres - Quartier Latin Super-condensateur a electrolyte perfectionne

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4163982A (en) * 1977-04-29 1979-08-07 Bell Telephone Laboratories, Incorporated Solid state electrical switch employing electrochromic material
DE10342026A1 (de) * 2003-09-11 2005-04-28 Infineon Technologies Ag Speicherzelle mit Ionenleitungsspeichermechanismus und Verfahren zu deren Herstellung
JP4792714B2 (ja) * 2003-11-28 2011-10-12 ソニー株式会社 記憶素子及び記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010029082A1 (de) * 2010-05-18 2011-11-24 Eva Schwartz Durchlaufofen zum Erwärmen von Werkstücken mit hoher Aufheizrate im Eingangsbereich

Also Published As

Publication number Publication date
EP1753045B1 (de) 2008-04-16
DE602005006123T2 (de) 2009-05-07
EP1753045A1 (de) 2007-02-14

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