DE602005003567D1 - Ebenen-neuausrichtung nach einem epitaxieschritt - Google Patents

Ebenen-neuausrichtung nach einem epitaxieschritt

Info

Publication number
DE602005003567D1
DE602005003567D1 DE602005003567T DE602005003567T DE602005003567D1 DE 602005003567 D1 DE602005003567 D1 DE 602005003567D1 DE 602005003567 T DE602005003567 T DE 602005003567T DE 602005003567 T DE602005003567 T DE 602005003567T DE 602005003567 D1 DE602005003567 D1 DE 602005003567D1
Authority
DE
Germany
Prior art keywords
epitaxi
level alignment
alignment
level
epitaxi step
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005003567T
Other languages
English (en)
Other versions
DE602005003567T2 (de
Inventor
Bernard Diem
Eugene Blanchet
Bishnu Gogoi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
NXP USA Inc
Original Assignee
Commissariat a lEnergie Atomique CEA
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Freescale Semiconductor Inc filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE602005003567D1 publication Critical patent/DE602005003567D1/de
Application granted granted Critical
Publication of DE602005003567T2 publication Critical patent/DE602005003567T2/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE602005003567T 2004-04-21 2005-04-20 Ebenen-neuausrichtung nach einem epitaxieschritt Active DE602005003567T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0450752A FR2869459B1 (fr) 2004-04-21 2004-04-21 Realignement entre niveaux apres une etape d'epitaxie.
FR0450752 2004-04-21
PCT/FR2005/050260 WO2005106943A2 (fr) 2004-04-21 2005-04-20 Realignement entre niveaux apres une etape d'epitaxie

Publications (2)

Publication Number Publication Date
DE602005003567D1 true DE602005003567D1 (de) 2008-01-10
DE602005003567T2 DE602005003567T2 (de) 2008-11-27

Family

ID=34945170

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005003567T Active DE602005003567T2 (de) 2004-04-21 2005-04-20 Ebenen-neuausrichtung nach einem epitaxieschritt

Country Status (6)

Country Link
US (1) US7830027B2 (de)
EP (1) EP1741131B1 (de)
JP (1) JP2007534168A (de)
DE (1) DE602005003567T2 (de)
FR (1) FR2869459B1 (de)
WO (1) WO2005106943A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2869459B1 (fr) * 2004-04-21 2006-08-04 Commissariat Energie Atomique Realignement entre niveaux apres une etape d'epitaxie.
US9123634B2 (en) * 2013-01-15 2015-09-01 Epistar Corporation Method for making semiconductor device and semiconductor device made thereby

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6380528A (ja) * 1986-09-24 1988-04-11 Nec Corp 埋込拡散層の形成方法
JPS63108717A (ja) * 1986-10-27 1988-05-13 Nec Corp 半導体装置の製造方法
US4936930A (en) * 1988-01-06 1990-06-26 Siliconix Incorporated Method for improved alignment for semiconductor devices with buried layers
JPH0340415A (ja) * 1989-04-05 1991-02-21 Oki Electric Ind Co Ltd アライメントマーク及びアライメントマーク形成方法
US5106432A (en) * 1989-05-16 1992-04-21 Oki Electric Industry Co., Ltd. Wafer alignment mark utilizing parallel grooves and process
JP3060261B2 (ja) * 1991-03-19 2000-07-10 株式会社半導体エネルギー研究所 半導体装置の製造方法
JPH053143A (ja) * 1991-04-19 1993-01-08 Hitachi Ltd 位置合せ方法および装置
DE69332006T2 (de) * 1992-03-25 2002-11-28 Texas Instruments Inc Planares Verfahren unter Verwendung von gemeinsamen Ausrichtungsmarken für die Wannenimplantierungen
US5314837A (en) * 1992-06-08 1994-05-24 Analog Devices, Incorporated Method of making a registration mark on a semiconductor
US5270255A (en) * 1993-01-08 1993-12-14 Chartered Semiconductor Manufacturing Pte, Ltd. Metallization process for good metal step coverage while maintaining useful alignment mark
JP2793486B2 (ja) * 1993-12-01 1998-09-03 山形日本電気株式会社 半導体装置の製造方法
CA2178255A1 (en) * 1995-07-12 1997-01-13 Becton, Dickinson And Company Telescoping needle shield
US5700732A (en) * 1996-08-02 1997-12-23 Micron Technology, Inc. Semiconductor wafer, wafer alignment patterns and method of forming wafer alignment patterns
US5801090A (en) * 1997-04-25 1998-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method of protecting an alignment mark in a semiconductor manufacturing process with CMP
JPH10312964A (ja) * 1997-05-13 1998-11-24 Sony Corp 半導体装置の製造方法
JPH11329923A (ja) * 1998-05-11 1999-11-30 Sony Corp 半導体装置の製造方法
US6596604B1 (en) * 2002-07-22 2003-07-22 Atmel Corporation Method of preventing shift of alignment marks during rapid thermal processing
FR2842832B1 (fr) * 2002-07-24 2006-01-20 Lumilog Procede de realisation par epitaxie en phase vapeur d'un film de nitrure de gallium a faible densite de defaut
TWI237908B (en) * 2003-08-29 2005-08-11 Ind Tech Res Inst A method for manufacturing a strained Si having few threading dislocations
FR2869459B1 (fr) * 2004-04-21 2006-08-04 Commissariat Energie Atomique Realignement entre niveaux apres une etape d'epitaxie.
US20060208257A1 (en) * 2005-03-15 2006-09-21 Branz Howard M Method for low-temperature, hetero-epitaxial growth of thin film cSi on amorphous and multi-crystalline substrates and c-Si devices on amorphous, multi-crystalline, and crystalline substrates
US7396407B2 (en) * 2006-04-18 2008-07-08 International Business Machines Corporation Trench-edge-defect-free recrystallization by edge-angle-optimized solid phase epitaxy: method and applications to hybrid orientation substrates

Also Published As

Publication number Publication date
JP2007534168A (ja) 2007-11-22
EP1741131B1 (de) 2007-11-28
WO2005106943A3 (fr) 2006-05-04
WO2005106943A2 (fr) 2005-11-10
FR2869459B1 (fr) 2006-08-04
US20070221120A1 (en) 2007-09-27
DE602005003567T2 (de) 2008-11-27
FR2869459A1 (fr) 2005-10-28
US7830027B2 (en) 2010-11-09
EP1741131A2 (de) 2007-01-10

Similar Documents

Publication Publication Date Title
DE502005004089D1 (de) Steckverbinder
DE602005002517D1 (de) Drehtisch
DE602005003874D1 (de) Steckverbinder
DE602005015488D1 (de) Verbesserter verflüssigungsapparat
DK1740484T3 (da) Platform
DE602005023445D1 (de) Malverfahren
DE602005026520D1 (de) Malverfahren
DE202005000407U1 (de) Arbeitsbühne
NO20041348D0 (no) Konnektor
FR2873860B1 (fr) Connecteur
DE112005001784A5 (de) Geruchsverschluss
DK1682274T3 (da) Platform
DE502005006611D1 (de) Einrichtung
NO20043427D0 (no) Stige
SE0400476L (sv) Komponent
NO20035626D0 (no) Metode
DE602005003567D1 (de) Ebenen-neuausrichtung nach einem epitaxieschritt
NO20035401D0 (no) Metode
ITMI20042069A1 (it) Un elettrostimolatore
DE102004029701B8 (de) Steckverbinder
SE0400426D0 (sv) Stegplattform
DE112005002726A5 (de) Zentriervorrichtung
ITCH20040003A1 (it) Metodo trainig cane-conduttore
SE0402211D0 (sv) Method
SE0402212D0 (sv) Method

Legal Events

Date Code Title Description
8364 No opposition during term of opposition