DE602005003346D1 - Verfahren und vorrichtung zur herstellung von blöcken aus halbleitermaterial - Google Patents

Verfahren und vorrichtung zur herstellung von blöcken aus halbleitermaterial

Info

Publication number
DE602005003346D1
DE602005003346D1 DE602005003346T DE602005003346T DE602005003346D1 DE 602005003346 D1 DE602005003346 D1 DE 602005003346D1 DE 602005003346 T DE602005003346 T DE 602005003346T DE 602005003346 T DE602005003346 T DE 602005003346T DE 602005003346 D1 DE602005003346 D1 DE 602005003346D1
Authority
DE
Germany
Prior art keywords
semiconductor material
chamber
crystallisation
crucible
molten semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005003346T
Other languages
English (en)
Other versions
DE602005003346T2 (de
Inventor
Pascal Rivat
Gobbo Jean-Pierre La Grivo Del
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EFD Induction SAS
Original Assignee
EFD Induction SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EFD Induction SAS filed Critical EFD Induction SAS
Publication of DE602005003346D1 publication Critical patent/DE602005003346D1/de
Application granted granted Critical
Publication of DE602005003346T2 publication Critical patent/DE602005003346T2/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/001—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
DE602005003346T 2004-04-20 2005-04-19 Verfahren und vorrichtung zur herstellung von blöcken aus halbleitermaterial Active DE602005003346T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0450738 2004-04-20
FR0450738A FR2869028B1 (fr) 2004-04-20 2004-04-20 Procede et installation de fabrication de blocs d'un materiau semiconducteur
PCT/FR2005/050258 WO2005105670A1 (fr) 2004-04-20 2005-04-19 Procede et installation de fabrication de blocs d'un materiau semiconducteur

Publications (2)

Publication Number Publication Date
DE602005003346D1 true DE602005003346D1 (de) 2007-12-27
DE602005003346T2 DE602005003346T2 (de) 2008-09-04

Family

ID=34945044

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005003346T Active DE602005003346T2 (de) 2004-04-20 2005-04-19 Verfahren und vorrichtung zur herstellung von blöcken aus halbleitermaterial

Country Status (6)

Country Link
EP (1) EP1742870B1 (de)
AT (1) ATE378289T1 (de)
DE (1) DE602005003346T2 (de)
ES (1) ES2296181T3 (de)
FR (1) FR2869028B1 (de)
WO (1) WO2005105670A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006009802A2 (en) * 2004-06-18 2006-01-26 Memc Electronic Materials, Inc. A melter assembly and method for charging a crystal forming apparatus with molten source material
US7691199B2 (en) 2004-06-18 2010-04-06 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7344594B2 (en) 2004-06-18 2008-03-18 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7465351B2 (en) 2004-06-18 2008-12-16 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
FR2909990B1 (fr) * 2006-12-13 2009-03-13 Efd Induction Sa Sa Procede et installation de fabrication de blocs d'un materiau semiconducteur
JP4307516B1 (ja) * 2008-11-25 2009-08-05 佑吉 堀岡 結晶成長装置及び結晶成長方法
FR2940327B1 (fr) 2008-12-19 2011-02-11 Commissariat Energie Atomique Four de fusion-solidification comportant une modulation des echanges thermiques par les parois laterales
EP2530187A1 (de) * 2011-06-03 2012-12-05 Evonik Solar Norge AS Siliciumverfeinerung durch die direktionale Erstarrung in einer sauerstoffhaltigen Atmosphäre

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2827592B1 (fr) * 2001-07-23 2003-08-22 Invensil Silicium metallurgique de haute purete et procede d'elaboration
FR2831881B1 (fr) * 2001-11-02 2004-01-16 Hubert Lauvray Procede de purification de silicium metallurgique par plasma inductif couple a une solidification directionnelle et obtention directe de silicium de qualite solaire

Also Published As

Publication number Publication date
ATE378289T1 (de) 2007-11-15
ES2296181T3 (es) 2008-04-16
EP1742870B1 (de) 2007-11-14
FR2869028B1 (fr) 2006-07-07
FR2869028A1 (fr) 2005-10-21
DE602005003346T2 (de) 2008-09-04
EP1742870A1 (de) 2007-01-17
WO2005105670A1 (fr) 2005-11-10

Similar Documents

Publication Publication Date Title
ATE378289T1 (de) Verfahren und vorrichtung zur herstellung von blöcken aus halbleitermaterial
ATE393245T1 (de) Verfahren zur reinigung eines schmelzflüssigen metalls
ATE356132T1 (de) Verfahren zur reinigung von thiophenen
DE60238615D1 (de) Metallurgisches silizium hoher reinheit und verfahren zu seiner herstellung
UA86168C2 (uk) Спосіб і пристрій для рафінування розплавленого матеріалу
ATE509718T1 (de) Verfahren zur herstellung poröser metallkörper
ATE381963T1 (de) Verfahren zur herstellung von gereinigten partikeln
EA200970275A1 (ru) Способ и устройство очистки низкокачественного кремнийсодержащего материала
EA200900810A1 (ru) Способ получения равномерно кристаллизованных гранулятов из поликонденсата
WO2010065401A3 (en) Purification of silicon by electric induction melting and directional partial cooling of the melt
WO2011060450A3 (en) Methods for purifying metallurgical silicon
ATE309878T1 (de) Giesssystem und giessverfahren für hochreinen und feinkörnigen metallguss
DE502005009647D1 (de) Verfahren zum herstellen eines gussbauteils
DE60024666D1 (de) Herstellungsverfahren für poröse metallgegenstände
DE60314311D1 (de) Verfahren und Vorrichtung für die Herstellung eines Tiegels aus Quarzglas mittels Lichtbogenschmelzen
EP1101552A3 (de) Hochrein keimbildend gegossener Metallformkörper
DE60316791D1 (de) Verfahren zur aufreinigung von lanzoprazol
ATE350188T1 (de) Getter auf grund von intermetallischen verbindungen sowie verfahren zu dessen herstellung
WO2005071128A3 (de) Verfahren zum herstellen von gussbauteilen
WO2008078043A3 (fr) Procede et installation de fabrication de blocs d'un materiau semiconducteur
ATE475724T1 (de) Kristallisationsverfahren zur reinigung eines schmelzflüssigen metalls, insbesondere rezyklierten aluminiums
DE502004008347D1 (de) Verfahren zur herstellung eines kieselsäuregranulates
WO2008070887A3 (en) Method and apparatus for producing crystal grade anhydrous rare earth halides
WO2008055490A3 (de) Vertikalgussvorrichtung zur herstellung von formteilen
ATE380083T1 (de) Verfahren und vorrichtung zum entfernen von schlacke

Legal Events

Date Code Title Description
8364 No opposition during term of opposition