DE602004030645D1 - Resistpolymer, Resistzusammensetzung und Mustererzeugungsverfahren - Google Patents
Resistpolymer, Resistzusammensetzung und MustererzeugungsverfahrenInfo
- Publication number
- DE602004030645D1 DE602004030645D1 DE602004030645T DE602004030645T DE602004030645D1 DE 602004030645 D1 DE602004030645 D1 DE 602004030645D1 DE 602004030645 T DE602004030645 T DE 602004030645T DE 602004030645 T DE602004030645 T DE 602004030645T DE 602004030645 D1 DE602004030645 D1 DE 602004030645D1
- Authority
- DE
- Germany
- Prior art keywords
- resist
- forming method
- pattern forming
- polymer
- resist composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1809—C9-(meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1811—C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1812—C12-(meth)acrylate, e.g. lauryl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1818—C13or longer chain (meth)acrylate, e.g. stearyl (meth)acrylate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003288844A JP4092572B2 (ja) | 2003-08-07 | 2003-08-07 | レジスト用重合体、レジスト材料及びパターン形成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004030645D1 true DE602004030645D1 (de) | 2011-02-03 |
Family
ID=33550049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004030645T Active DE602004030645D1 (de) | 2003-08-07 | 2004-08-06 | Resistpolymer, Resistzusammensetzung und Mustererzeugungsverfahren |
Country Status (7)
Country | Link |
---|---|
US (1) | US7135270B2 (de) |
EP (1) | EP1505443B1 (de) |
JP (1) | JP4092572B2 (de) |
KR (1) | KR100721089B1 (de) |
CN (1) | CN100578358C (de) |
DE (1) | DE602004030645D1 (de) |
TW (1) | TWI300883B (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7601479B2 (en) * | 2003-09-12 | 2009-10-13 | Shin-Etsu Chemical Co., Ltd. | Polymer, resist composition and patterning process |
JP4240223B2 (ja) * | 2004-03-22 | 2009-03-18 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
JP4191103B2 (ja) | 2004-07-02 | 2008-12-03 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
DE102004046405A1 (de) * | 2004-09-24 | 2006-04-06 | Infineon Technologies Ag | Copolymer, Zusammensetzung enthaltend das Copolymer und Verfahren zur Strukturierung eines Substrats unter Verwendung der Zusammensetzung |
DE102004047273A1 (de) * | 2004-09-24 | 2006-04-06 | Infineon Technologies Ag | Elektrisch leitfähiger Resist für die Fotomaskenherstellung |
KR101597366B1 (ko) * | 2007-05-23 | 2016-02-24 | 제이에스알 가부시끼가이샤 | 패턴 형성 방법 및 그 방법에 사용하는 수지 조성물 |
US8637623B2 (en) * | 2008-02-25 | 2014-01-28 | Daicel Chemical Industries, Ltd. | Monomer having electron-withdrawing substituent and lactone skeleton, polymeric compound, and photoresist composition |
KR101378026B1 (ko) * | 2013-04-26 | 2014-03-25 | 금호석유화학주식회사 | 레지스트용 중합체 및 이를 포함하는 레지스트 조성물 |
JP6468137B2 (ja) * | 2014-10-01 | 2019-02-13 | 信越化学工業株式会社 | 化学増幅型ネガ型レジスト材料、光硬化性ドライフィルム及びその製造方法、パターン形成方法並びに電気・電子部品保護用皮膜 |
JP5927275B2 (ja) * | 2014-11-26 | 2016-06-01 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、及びレジスト膜 |
JP6988635B2 (ja) * | 2018-03-27 | 2022-01-05 | 三菱ケミカル株式会社 | レジスト用重合体 |
JP7052612B2 (ja) * | 2018-03-27 | 2022-04-12 | 三菱ケミカル株式会社 | (メタ)アクリル酸エステルおよびその製造方法 |
JP7028037B2 (ja) * | 2018-04-13 | 2022-03-02 | 三菱ケミカル株式会社 | レジスト組成物 |
CN112041745B (zh) * | 2018-04-23 | 2022-03-08 | 住友电木株式会社 | 凸块保护膜用感光性树脂组合物、半导体装置、半导体装置的制造方法和电子设备 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2881969B2 (ja) | 1990-06-05 | 1999-04-12 | 富士通株式会社 | 放射線感光レジストとパターン形成方法 |
JP3751065B2 (ja) | 1995-06-28 | 2006-03-01 | 富士通株式会社 | レジスト材料及びレジストパターンの形成方法 |
KR100206664B1 (ko) * | 1995-06-28 | 1999-07-01 | 세키사와 다다시 | 화학증폭형 레지스트 조성물 및 레지스트 패턴의 형성방법 |
CN1205454A (zh) * | 1997-06-20 | 1999-01-20 | 智索股份有限公司 | 感光性树脂组合物及使用该树脂组合物的显示元件 |
JP3333139B2 (ja) * | 1998-10-20 | 2002-10-07 | クラリアント インターナショナル リミテッド | 感放射線性樹脂組成物 |
JP2000336121A (ja) | 1998-11-02 | 2000-12-05 | Shin Etsu Chem Co Ltd | 新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法 |
TWI228504B (en) * | 1998-11-02 | 2005-03-01 | Shinetsu Chemical Co | Novel ester compounds, polymers, resist compositions and patterning process |
KR100636068B1 (ko) * | 2001-06-15 | 2006-10-19 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 레지스트 재료 및 패턴 형성 방법 |
KR100571452B1 (ko) * | 2001-06-15 | 2006-04-17 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 고분자 화합물, 레지스트 재료 및 패턴 형성 방법 |
US6946233B2 (en) * | 2001-07-24 | 2005-09-20 | Shin-Etsu Chemical Co., Ltd. | Polymer, resist material and patterning method |
JP4420169B2 (ja) | 2001-09-12 | 2010-02-24 | 信越化学工業株式会社 | 高分子化合物、レジスト材料、及びパターン形成方法 |
-
2003
- 2003-08-07 JP JP2003288844A patent/JP4092572B2/ja not_active Expired - Lifetime
-
2004
- 2004-08-05 US US10/911,676 patent/US7135270B2/en active Active
- 2004-08-06 DE DE602004030645T patent/DE602004030645D1/de active Active
- 2004-08-06 TW TW093123662A patent/TWI300883B/zh active
- 2004-08-06 CN CN200410098151A patent/CN100578358C/zh active Active
- 2004-08-06 EP EP04254749A patent/EP1505443B1/de active Active
- 2004-08-06 KR KR1020040061925A patent/KR100721089B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN1607461A (zh) | 2005-04-20 |
EP1505443A2 (de) | 2005-02-09 |
US7135270B2 (en) | 2006-11-14 |
KR20050016190A (ko) | 2005-02-21 |
TW200513798A (en) | 2005-04-16 |
TWI300883B (en) | 2008-09-11 |
EP1505443A3 (de) | 2006-02-01 |
KR100721089B1 (ko) | 2007-05-23 |
JP2005054142A (ja) | 2005-03-03 |
US20050031989A1 (en) | 2005-02-10 |
EP1505443B1 (de) | 2010-12-22 |
CN100578358C (zh) | 2010-01-06 |
JP4092572B2 (ja) | 2008-05-28 |
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