DE602004029220D1 - Hochtemperaturkoeffizient MOS Polarisierungsschaltung - Google Patents

Hochtemperaturkoeffizient MOS Polarisierungsschaltung

Info

Publication number
DE602004029220D1
DE602004029220D1 DE602004029220T DE602004029220T DE602004029220D1 DE 602004029220 D1 DE602004029220 D1 DE 602004029220D1 DE 602004029220 T DE602004029220 T DE 602004029220T DE 602004029220 T DE602004029220 T DE 602004029220T DE 602004029220 D1 DE602004029220 D1 DE 602004029220D1
Authority
DE
Germany
Prior art keywords
high temperature
temperature coefficient
polarization circuit
coefficient mos
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004029220T
Other languages
English (en)
Inventor
Arya Reza Behzad
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Broadcom Corp
Original Assignee
Broadcom Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Broadcom Corp filed Critical Broadcom Corp
Publication of DE602004029220D1 publication Critical patent/DE602004029220D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
  • Networks Using Active Elements (AREA)
DE602004029220T 2003-05-29 2004-03-26 Hochtemperaturkoeffizient MOS Polarisierungsschaltung Expired - Lifetime DE602004029220D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/447,790 US6946896B2 (en) 2003-05-29 2003-05-29 High temperature coefficient MOS bias generation circuit

Publications (1)

Publication Number Publication Date
DE602004029220D1 true DE602004029220D1 (de) 2010-11-04

Family

ID=33131596

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004029220T Expired - Lifetime DE602004029220D1 (de) 2003-05-29 2004-03-26 Hochtemperaturkoeffizient MOS Polarisierungsschaltung

Country Status (3)

Country Link
US (1) US6946896B2 (de)
EP (1) EP1482390B1 (de)
DE (1) DE602004029220D1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7372316B2 (en) * 2004-11-25 2008-05-13 Stmicroelectronics Pvt. Ltd. Temperature compensated reference current generator
KR100657171B1 (ko) * 2005-04-29 2006-12-20 삼성전자주식회사 리프레쉬 제어회로 및 리프레쉬 제어방법
US9455722B2 (en) * 2005-11-30 2016-09-27 Ati Technologies Ulc Method and apparatus for fast locking of a clock generating circuit
DE102006048595A1 (de) * 2006-10-13 2008-04-17 Austriamicrosystems Ag Schaltungsanordnung, umfassend eine Bias-Stromquelle, und Verfahren zum Betrieb einer Schaltungsanordnung
JP5107272B2 (ja) * 2009-01-15 2012-12-26 株式会社東芝 温度補償回路
US8575998B2 (en) * 2009-07-02 2013-11-05 Taiwan Semiconductor Manufacturing Company, Ltd. Voltage reference circuit with temperature compensation
US8669808B2 (en) * 2009-09-14 2014-03-11 Mediatek Inc. Bias circuit and phase-locked loop circuit using the same
US8985850B1 (en) * 2009-10-30 2015-03-24 Cypress Semiconductor Corporation Adaptive gate driver strength control
US7990223B1 (en) * 2010-05-31 2011-08-02 Kabushiki Kaisha Toshiba High frequency module and operating method of the same
US8451047B2 (en) * 2011-05-17 2013-05-28 Issc Technologies Corp. Circuit used for indicating process corner and extreme temperature
US9385694B2 (en) * 2011-12-20 2016-07-05 Conexant Systems, Inc. Low-power programmable oscillator and ramp generator
KR20150104297A (ko) * 2014-03-05 2015-09-15 에스케이하이닉스 주식회사 반도체 장치 및 반도체 시스템
JP2016121907A (ja) * 2014-12-24 2016-07-07 株式会社ソシオネクスト 温度センサ回路及び集積回路

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4743862A (en) * 1986-05-02 1988-05-10 Anadigics, Inc. JFET current mirror and voltage level shifting apparatus
US4959622A (en) * 1989-08-31 1990-09-25 Delco Electronics Corporation Operational amplifier with precise bias current control
US5157285A (en) * 1991-08-30 1992-10-20 Allen Michael J Low noise, temperature-compensated, and process-compensated current and voltage control circuits
US5349286A (en) * 1993-06-18 1994-09-20 Texas Instruments Incorporated Compensation for low gain bipolar transistors in voltage and current reference circuits
JP3039611B2 (ja) 1995-05-26 2000-05-08 日本電気株式会社 カレントミラー回路
JP3780030B2 (ja) * 1995-06-12 2006-05-31 株式会社ルネサステクノロジ 発振回路およびｄｒａｍ
US5892388A (en) * 1996-04-15 1999-04-06 National Semiconductor Corporation Low power bias circuit using FET as a resistor
US6107868A (en) * 1998-08-11 2000-08-22 Analog Devices, Inc. Temperature, supply and process-insensitive CMOS reference structures
US6323725B1 (en) * 1999-03-31 2001-11-27 Qualcomm Incorporated Constant transconductance bias circuit having body effect cancellation circuitry
JP3289276B2 (ja) * 1999-05-27 2002-06-04 日本電気株式会社 半導体装置
DE69933670D1 (de) * 1999-08-31 2006-11-30 St Microelectronics Srl Temperaturfühler in Cmos-Technologie
KR100368982B1 (ko) * 1999-11-30 2003-01-24 주식회사 하이닉스반도체 씨모스 정전류 레퍼런스 회로
US6407623B1 (en) * 2001-01-31 2002-06-18 Qualcomm Incorporated Bias circuit for maintaining a constant value of transconductance divided by load capacitance
EP1315063A1 (de) * 2001-11-14 2003-05-28 Dialog Semiconductor GmbH Schwellenspannungunabhängige Stromreferenz eines MOS Transistors
JP4017464B2 (ja) * 2002-07-15 2007-12-05 沖電気工業株式会社 基準電圧回路

Also Published As

Publication number Publication date
EP1482390B1 (de) 2010-09-22
US6946896B2 (en) 2005-09-20
EP1482390A2 (de) 2004-12-01
EP1482390A3 (de) 2005-01-05
US20040239404A1 (en) 2004-12-02

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