DE602004023457D1 - Volumenwellenresonator mit angepasster Resonanzfrequenz und Herstellungsverfahren hierfür - Google Patents

Volumenwellenresonator mit angepasster Resonanzfrequenz und Herstellungsverfahren hierfür

Info

Publication number
DE602004023457D1
DE602004023457D1 DE602004023457T DE602004023457T DE602004023457D1 DE 602004023457 D1 DE602004023457 D1 DE 602004023457D1 DE 602004023457 T DE602004023457 T DE 602004023457T DE 602004023457 T DE602004023457 T DE 602004023457T DE 602004023457 D1 DE602004023457 D1 DE 602004023457D1
Authority
DE
Germany
Prior art keywords
electrode
resonance frequency
manufacturing
wave resonator
resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004023457T
Other languages
English (en)
Inventor
Philippe Robert
Pascal Ancey
Gregory Caruyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, STMicroelectronics SA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE602004023457D1 publication Critical patent/DE602004023457D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H2009/02165—Tuning
    • H03H2009/02173—Tuning of film bulk acoustic resonators [FBAR]
    • H03H2009/02181—Tuning of film bulk acoustic resonators [FBAR] by application of heat from a heat source
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
DE602004023457T 2003-07-17 2004-06-29 Volumenwellenresonator mit angepasster Resonanzfrequenz und Herstellungsverfahren hierfür Active DE602004023457D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0308715A FR2857785B1 (fr) 2003-07-17 2003-07-17 Resonateur acoustique de volume a frequence de resonance ajustee et procede de realisation

Publications (1)

Publication Number Publication Date
DE602004023457D1 true DE602004023457D1 (de) 2009-11-19

Family

ID=33462549

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004023457T Active DE602004023457D1 (de) 2003-07-17 2004-06-29 Volumenwellenresonator mit angepasster Resonanzfrequenz und Herstellungsverfahren hierfür

Country Status (5)

Country Link
US (1) US7310029B2 (de)
EP (1) EP1499018B1 (de)
AT (1) ATE445259T1 (de)
DE (1) DE602004023457D1 (de)
FR (1) FR2857785B1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2835981B1 (fr) * 2002-02-13 2005-04-29 Commissariat Energie Atomique Microresonateur mems a ondes acoustiques de volume accordable
US7038355B2 (en) * 2003-04-03 2006-05-02 Stmicroelectronics Sa Tunable microresonator on an insulating beam deformable by the difference in thermal expansion coefficients
US7068125B2 (en) * 2004-03-04 2006-06-27 Robert Bosch Gmbh Temperature controlled MEMS resonator and method for controlling resonator frequency
DE102005043039B4 (de) 2005-09-09 2008-10-30 Siemens Ag Vorrichtung mit piezoakustischem Resonatorelement, Verfahren zu dessen Herstellung und Verfahren zur Ausgabe eines Signals in Abhängigkeit einer Resonanzfrequenz
WO2007041158A1 (en) * 2005-09-30 2007-04-12 Vyteris, Inc. Iontophoresis drug delivery device providing acceptable depth and duration of dermal anesthesia
FR2901708A1 (fr) * 2006-06-02 2007-12-07 Ela Medical Soc Par Actions Si Dispositif medical actif tel qu'implant actif ou programmateur pour un tel implant, comprenant des moyens de telemetrie rf
US8925163B2 (en) * 2006-09-18 2015-01-06 Teknologian Tutkimuskeskus Vtt Method of manufacturing laterally coupled BAW thin films
CN101662718A (zh) * 2008-08-28 2010-03-03 深圳富泰宏精密工业有限公司 薄膜扬声器
US8074880B2 (en) * 2008-12-01 2011-12-13 Research In Motion Limited Method, system and mobile device employing enhanced fingerprint authentication
US8689426B2 (en) 2008-12-17 2014-04-08 Sand 9, Inc. Method of manufacturing a resonating structure
US8448494B2 (en) * 2008-12-30 2013-05-28 Stmicroelectronics S.R.L. Integrated electronic microbalance plus chemical sensor
TW201125372A (en) * 2010-01-15 2011-07-16 Univ Nat Chiao Tung Piezoelectric panel speaker and optimal design method of the same
WO2011109382A1 (en) 2010-03-01 2011-09-09 Sand9, Inc. Microelectromechanical gyroscopes and related apparatus and methods
WO2011133682A1 (en) 2010-04-20 2011-10-27 Guiti Zolfagharkhani Microelectromechanical gyroscopes and related apparatus and methods
WO2012040043A1 (en) 2010-09-20 2012-03-29 Sand9, Inc. Resonant sensing using extensional modes of a plate
US9691544B2 (en) 2011-08-18 2017-06-27 Winchester Technologies, LLC Electrostatically tunable magnetoelectric inductors with large inductance tunability
US9383208B2 (en) 2011-10-13 2016-07-05 Analog Devices, Inc. Electromechanical magnetometer and applications thereof
US9154103B2 (en) 2012-01-30 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator
US9667218B2 (en) 2012-01-30 2017-05-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator comprising feedback circuit
US9608592B2 (en) 2014-01-21 2017-03-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic wave resonator (FBAR) having stress-relief
US9667220B2 (en) 2012-01-30 2017-05-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator comprising heater and sense resistors
US9240767B2 (en) * 2012-05-31 2016-01-19 Texas Instruments Incorporated Temperature-controlled integrated piezoelectric resonator apparatus
US9484522B2 (en) * 2013-03-13 2016-11-01 Microgen Systems, Inc. Piezoelectric energy harvester device with curved sidewalls, system, and methods of use and making
US9728707B2 (en) 2014-02-05 2017-08-08 Microgen Systems, Inc. Packaged piezoelectric energy harvester device with a compliant stopper structure, system, and methods of use and making
WO2016114172A1 (ja) 2015-01-13 2016-07-21 株式会社村田製作所 圧電デバイスの製造方法
WO2016114173A1 (ja) * 2015-01-13 2016-07-21 株式会社村田製作所 圧電デバイスの製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL23095C (de) * 1926-01-23
DE1166843B (de) * 1961-08-10 1964-04-02 Telefunken Patent Verfahren zum Frequenzabgleich eines piezoelektrischen Schwingkoerpers und hermetisch abgeschlossenes Gefaess zur Anwendung bei der Ausuebung dieses Verfahrens
EP0111483A4 (de) * 1982-06-14 1985-12-19 Gte Prod Corp Trimmen von piezoelektrischen komponenten.
JP2602215B2 (ja) * 1986-12-15 1997-04-23 日本電波工業 株式会社 圧電振動子の周波数調整方法
US5587620A (en) * 1993-12-21 1996-12-24 Hewlett-Packard Company Tunable thin film acoustic resonators and method for making the same
US5696423A (en) * 1995-06-29 1997-12-09 Motorola, Inc. Temperature compenated resonator and method
US5780713A (en) * 1996-11-19 1998-07-14 Hewlett-Packard Company Post-fabrication tuning of acoustic resonators
US6339276B1 (en) * 1999-11-01 2002-01-15 Agere Systems Guardian Corp. Incremental tuning process for electrical resonators based on mechanical motion
US7194247B2 (en) * 2001-09-26 2007-03-20 Nokia Corporation Dual-channel passband filtering system using acoustic resonators in lattice topology
US6707351B2 (en) * 2002-03-27 2004-03-16 Motorola, Inc. Tunable MEMS resonator and method for tuning

Also Published As

Publication number Publication date
EP1499018A1 (de) 2005-01-19
FR2857785B1 (fr) 2005-10-21
ATE445259T1 (de) 2009-10-15
EP1499018B1 (de) 2009-10-07
US20050028336A1 (en) 2005-02-10
FR2857785A1 (fr) 2005-01-21
US7310029B2 (en) 2007-12-18

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