DE602004018722D1 - Methode zur Abstimmung der optischen Durchlässigkeit von Maskenstrukturen um den Prozessspielraum zu vergrössern - Google Patents

Methode zur Abstimmung der optischen Durchlässigkeit von Maskenstrukturen um den Prozessspielraum zu vergrössern

Info

Publication number
DE602004018722D1
DE602004018722D1 DE602004018722T DE602004018722T DE602004018722D1 DE 602004018722 D1 DE602004018722 D1 DE 602004018722D1 DE 602004018722 T DE602004018722 T DE 602004018722T DE 602004018722 T DE602004018722 T DE 602004018722T DE 602004018722 D1 DE602004018722 D1 DE 602004018722D1
Authority
DE
Germany
Prior art keywords
tuning
increase
optical transmission
mask structures
process latitude
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004018722T
Other languages
English (en)
Inventor
Stephen D Hsu
Jang Fung Chen
Xuelong Shi
Den Broeke Douglas Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML MaskTools Netherlands BV
Original Assignee
ASML MaskTools Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML MaskTools Netherlands BV filed Critical ASML MaskTools Netherlands BV
Publication of DE602004018722D1 publication Critical patent/DE602004018722D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE602004018722T 2003-11-05 2004-11-05 Methode zur Abstimmung der optischen Durchlässigkeit von Maskenstrukturen um den Prozessspielraum zu vergrössern Active DE602004018722D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US51708203P 2003-11-05 2003-11-05

Publications (1)

Publication Number Publication Date
DE602004018722D1 true DE602004018722D1 (de) 2009-02-12

Family

ID=34435191

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004018722T Active DE602004018722D1 (de) 2003-11-05 2004-11-05 Methode zur Abstimmung der optischen Durchlässigkeit von Maskenstrukturen um den Prozessspielraum zu vergrössern

Country Status (8)

Country Link
US (1) US7514183B2 (de)
EP (1) EP1530084B1 (de)
JP (1) JP4398852B2 (de)
KR (1) KR20050043714A (de)
CN (1) CN1674226A (de)
DE (1) DE602004018722D1 (de)
SG (1) SG111289A1 (de)
TW (1) TW200527120A (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4904034B2 (ja) * 2004-09-14 2012-03-28 ケーエルエー−テンカー コーポレイション レチクル・レイアウト・データを評価するための方法、システム及び搬送媒体
US20060146307A1 (en) * 2004-12-30 2006-07-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1696273B1 (de) 2005-02-23 2008-08-06 ASML MaskTools B.V. Methode und Apparat zur Optimierung der Beleuchtung einer Schicht eines vollständigen Chips
TWI334962B (en) 2005-04-12 2010-12-21 Asml Masktools Bv A method, program product and apparatus for performing double exposure lithography
US7846616B2 (en) 2005-08-08 2010-12-07 Infineon Technologies Ag Lithography masks and methods
DE602005021106D1 (de) * 2005-10-03 2010-06-17 Imec Alternierende Phasenmaske
JP2008205338A (ja) * 2007-02-22 2008-09-04 Sony Corp 露光用マスク
US8652710B2 (en) * 2007-05-25 2014-02-18 Asml Netherlands B.V. Device manufacturing method, method of making a mask, and mask
US8103995B2 (en) * 2009-01-20 2012-01-24 Vanguard International Semiconductor Corporation Method for OPC correction
US8321818B2 (en) * 2009-06-26 2012-11-27 International Business Machines Corporation Model-based retargeting of layout patterns for sub-wavelength photolithography
US8146026B2 (en) * 2009-11-17 2012-03-27 International Business Machines Corporation Simultaneous photolithographic mask and target optimization
US8230372B2 (en) 2009-12-03 2012-07-24 International Business Machines Corporation Retargeting for electrical yield enhancement
US8331646B2 (en) 2009-12-23 2012-12-11 International Business Machines Corporation Optical proximity correction for transistors using harmonic mean of gate length
NL2006091A (en) * 2010-03-05 2011-09-06 Asml Netherlands Bv Design rule optimization in lithographic imaging based on correlation of functions representing mask and predefined optical conditions.
US8234603B2 (en) * 2010-07-14 2012-07-31 International Business Machines Corporation Method for fast estimation of lithographic binding patterns in an integrated circuit layout
US8856695B1 (en) 2013-03-14 2014-10-07 Samsung Electronics Co., Ltd. Method for generating post-OPC layout in consideration of top loss of etch mask layer
KR102170143B1 (ko) 2013-08-19 2020-10-26 삼성전자주식회사 노출 허용도 오차 및 레지스트레이션 오차가 보정된 포토마스크 및 그의 레지스트레이션 보정방법
US10209526B2 (en) * 2014-01-20 2019-02-19 Yakov Soskind Electromagnetic radiation enhancement methods and systems
CN109073981B (zh) * 2016-04-04 2021-09-24 科磊股份有限公司 通过填充因数调制的工艺兼容性改善
KR20200052487A (ko) * 2018-11-06 2020-05-15 삼성전자주식회사 반도체 소자의 제조 방법
JP6741893B1 (ja) * 2020-03-04 2020-08-19 株式会社エスケーエレクトロニクス ハーフトーンマスクの欠陥修正方法、ハーフトーンマスクの製造方法及びハーフトーンマスク

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100262457B1 (ko) * 1998-05-04 2000-08-01 윤종용 반도체 장치의 오픈 드레인 입출력단 구조 및 그 제조방법
US20010046304A1 (en) * 2000-04-24 2001-11-29 Rast Rodger H. System and method for selective control of acoustic isolation in headsets
US20020076073A1 (en) * 2000-12-19 2002-06-20 Taenzer Jon C. Automatically switched hearing aid communications earpiece
US6519760B2 (en) * 2001-02-28 2003-02-11 Asml Masktools, B.V. Method and apparatus for minimizing optical proximity effects
US6792591B2 (en) 2001-02-28 2004-09-14 Asml Masktools B.V. Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs
US6703167B2 (en) 2001-04-18 2004-03-09 Lacour Patrick Joseph Prioritizing the application of resolution enhancement techniques
US6553562B2 (en) 2001-05-04 2003-04-22 Asml Masktools B.V. Method and apparatus for generating masks utilized in conjunction with dipole illumination techniques
KR100566153B1 (ko) 2002-03-25 2006-03-31 에이에스엠엘 마스크툴즈 비.브이. 다이폴 조명을 활용하여 규칙기반 게이트 슈링크를수행하는 방법 및 장치
EP1385052B1 (de) 2002-07-26 2006-05-31 ASML MaskTools B.V. Richtungsabhängige Abschirmung zur Benutzung mit Dipolbelichtung
SG169901A1 (en) 2003-03-31 2011-04-29 Asml Masktools Bv Source and mask optimization
KR101115477B1 (ko) 2003-06-30 2012-03-06 에이에스엠엘 마스크툴즈 비.브이. 이미지 필드 맵을 이용하여 어시스트 피처를 생성하는방법, 프로그램물 및 장치

Also Published As

Publication number Publication date
SG111289A1 (en) 2005-05-30
TW200527120A (en) 2005-08-16
US20050196682A1 (en) 2005-09-08
EP1530084A1 (de) 2005-05-11
US7514183B2 (en) 2009-04-07
EP1530084B1 (de) 2008-12-31
CN1674226A (zh) 2005-09-28
KR20050043714A (ko) 2005-05-11
JP4398852B2 (ja) 2010-01-13
JP2005141242A (ja) 2005-06-02

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