DE602004016956D1 - Verdrahtungssubstrat und strahlungsdetektor damit - Google Patents

Verdrahtungssubstrat und strahlungsdetektor damit

Info

Publication number
DE602004016956D1
DE602004016956D1 DE602004016956T DE602004016956T DE602004016956D1 DE 602004016956 D1 DE602004016956 D1 DE 602004016956D1 DE 602004016956 T DE602004016956 T DE 602004016956T DE 602004016956 T DE602004016956 T DE 602004016956T DE 602004016956 D1 DE602004016956 D1 DE 602004016956D1
Authority
DE
Germany
Prior art keywords
wiring substrate
radiation detector
therewith
detector therewith
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004016956T
Other languages
English (en)
Inventor
Katsumi Shibayama
Yutaka Kusuyama
Masahiro Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of DE602004016956D1 publication Critical patent/DE602004016956D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/115—Via connections; Lands around holes or via connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/14—Structural association of two or more printed circuits
    • H05K1/144—Stacked arrangements of planar printed circuit boards

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
DE602004016956T 2003-01-08 2004-01-08 Verdrahtungssubstrat und strahlungsdetektor damit Expired - Lifetime DE602004016956D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003002541A JP4364514B2 (ja) 2003-01-08 2003-01-08 配線基板、及びそれを用いた放射線検出器
PCT/JP2004/000079 WO2004064163A1 (ja) 2003-01-08 2004-01-08 配線基板、及びそれを用いた放射線検出器

Publications (1)

Publication Number Publication Date
DE602004016956D1 true DE602004016956D1 (de) 2008-11-20

Family

ID=32708868

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004016956T Expired - Lifetime DE602004016956D1 (de) 2003-01-08 2004-01-08 Verdrahtungssubstrat und strahlungsdetektor damit

Country Status (9)

Country Link
US (1) US20060244153A1 (de)
EP (1) EP1589582B1 (de)
JP (1) JP4364514B2 (de)
KR (1) KR20050090133A (de)
CN (1) CN100407432C (de)
DE (1) DE602004016956D1 (de)
IL (1) IL169586A0 (de)
TW (1) TWI307556B (de)
WO (1) WO2004064163A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4133429B2 (ja) 2003-02-24 2008-08-13 浜松ホトニクス株式会社 半導体装置
JP4365108B2 (ja) * 2003-01-08 2009-11-18 浜松ホトニクス株式会社 配線基板、及びそれを用いた放射線検出器
JP3935091B2 (ja) * 2003-02-27 2007-06-20 浜松ホトニクス株式会社 半導体装置、及びそれを用いた放射線検出器
JP4138529B2 (ja) 2003-02-24 2008-08-27 浜松ホトニクス株式会社 半導体装置、及びそれを用いた放射線検出器
JP4421209B2 (ja) * 2003-04-11 2010-02-24 浜松ホトニクス株式会社 放射線検出器
JP4379295B2 (ja) * 2004-10-26 2009-12-09 ソニー株式会社 半導体イメージセンサー・モジュール及びその製造方法
EP2005475A2 (de) * 2006-03-30 2008-12-24 Koninklijke Philips Electronics N.V. Strahlungsdetektoranordnung
JP4451864B2 (ja) * 2006-07-11 2010-04-14 浜松ホトニクス株式会社 配線基板及び固体撮像装置
US7504637B2 (en) * 2006-07-11 2009-03-17 Aeroflex Colorado Springs Inc. Two component photodiode detector
JP2010171307A (ja) * 2009-01-26 2010-08-05 Panasonic Corp 撮像装置
JP2010212481A (ja) * 2009-03-11 2010-09-24 Panasonic Corp 撮像装置
JP5358509B2 (ja) * 2010-04-15 2013-12-04 浜松ホトニクス株式会社 放射線検出器モジュール
US8659148B2 (en) * 2010-11-30 2014-02-25 General Electric Company Tileable sensor array
JP5901169B2 (ja) * 2011-07-26 2016-04-06 キヤノン株式会社 シンチレータ構造体および放射線検出器
US10217790B2 (en) * 2015-01-15 2019-02-26 Koninklijke Philips N.V. Imaging detector module assembly
JP2016206101A (ja) * 2015-04-27 2016-12-08 ソニー株式会社 放射線検出装置、撮像装置、および撮像システム
JP6712215B2 (ja) * 2016-11-11 2020-06-17 浜松ホトニクス株式会社 光検出装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5043582A (en) * 1985-12-11 1991-08-27 General Imagining Corporation X-ray imaging system and solid state detector therefor
FR2627923B1 (fr) * 1988-02-26 1990-06-22 Thomson Csf Matrice d'elements photosensibles et detecteur de radiations comportant une telle matrice, notamment detecteur de rayons x a double energie
US5187380A (en) * 1992-04-09 1993-02-16 General Electric Company Low capacitance X-ray radiation detector
US5477933A (en) * 1994-10-24 1995-12-26 At&T Corp. Electronic device interconnection techniques
JPH1056040A (ja) * 1996-08-08 1998-02-24 Hitachi Ltd 半導体装置およびその製造方法
CN1267989C (zh) * 1996-09-12 2006-08-02 揖斐电株式会社 电路部件搭载用基板
US6620731B1 (en) * 1997-12-18 2003-09-16 Micron Technology, Inc. Method for fabricating semiconductor components and interconnects with contacts on opposing sides
US6800857B2 (en) * 2000-08-10 2004-10-05 Canon Kabushiki Kaisha Large-area fiber plate, radiation image pickup apparatus utilizing the same and producing method therefor
JP4693297B2 (ja) * 2000-08-10 2011-06-01 キヤノン株式会社 放射線撮像装置および放射線撮像システム
JP4012375B2 (ja) * 2001-05-31 2007-11-21 株式会社ルネサステクノロジ 配線基板およびその製造方法
CN1185915C (zh) * 2001-06-13 2005-01-19 佳能株式会社 柔性基板、半导体器件、摄像装置和放射线摄像系统
US6510195B1 (en) * 2001-07-18 2003-01-21 Koninklijke Philips Electronics, N.V. Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same
US7230247B2 (en) * 2002-03-08 2007-06-12 Hamamatsu Photonics K.K. Detector
JP4237966B2 (ja) * 2002-03-08 2009-03-11 浜松ホトニクス株式会社 検出器
JP2003282849A (ja) * 2002-03-26 2003-10-03 Canon Inc 放射線検出装置及び放射線検出装置用接続基板の製造方法
WO2004061478A1 (en) * 2003-01-06 2004-07-22 Koninklijke Philips Electronics N.V. Radiation detector with shielded electronics for computed tomography
JP4365108B2 (ja) * 2003-01-08 2009-11-18 浜松ホトニクス株式会社 配線基板、及びそれを用いた放射線検出器
JP4138529B2 (ja) * 2003-02-24 2008-08-27 浜松ホトニクス株式会社 半導体装置、及びそれを用いた放射線検出器
JP4421209B2 (ja) * 2003-04-11 2010-02-24 浜松ホトニクス株式会社 放射線検出器

Also Published As

Publication number Publication date
EP1589582A1 (de) 2005-10-26
TW200418195A (en) 2004-09-16
EP1589582A4 (de) 2007-02-14
JP4364514B2 (ja) 2009-11-18
CN100407432C (zh) 2008-07-30
CN1723565A (zh) 2006-01-18
US20060244153A1 (en) 2006-11-02
WO2004064163A1 (ja) 2004-07-29
KR20050090133A (ko) 2005-09-12
EP1589582B1 (de) 2008-10-08
IL169586A0 (en) 2007-07-04
JP2004265884A (ja) 2004-09-24
TWI307556B (en) 2009-03-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition