DE602004015557D1 - Ultraviolett-Quantentopf-Laserdioden auf Basis von Gruppe-III-Nitriden - Google Patents

Ultraviolett-Quantentopf-Laserdioden auf Basis von Gruppe-III-Nitriden

Info

Publication number
DE602004015557D1
DE602004015557D1 DE602004015557T DE602004015557T DE602004015557D1 DE 602004015557 D1 DE602004015557 D1 DE 602004015557D1 DE 602004015557 T DE602004015557 T DE 602004015557T DE 602004015557 T DE602004015557 T DE 602004015557T DE 602004015557 D1 DE602004015557 D1 DE 602004015557D1
Authority
DE
Germany
Prior art keywords
group iii
quantum well
laser diodes
iii nitrides
well laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004015557T
Other languages
English (en)
Inventor
Michael A Kneissl
David W Treat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Palo Alto Research Center Inc
Original Assignee
Palo Alto Research Center Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Palo Alto Research Center Inc filed Critical Palo Alto Research Center Inc
Publication of DE602004015557D1 publication Critical patent/DE602004015557D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3408—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by specially shaped wells, e.g. triangular

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE602004015557T 2003-12-17 2004-11-29 Ultraviolett-Quantentopf-Laserdioden auf Basis von Gruppe-III-Nitriden Active DE602004015557D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/736,643 US7138648B2 (en) 2003-12-17 2003-12-17 Ultraviolet group III-nitride-based quantum well laser diodes

Publications (1)

Publication Number Publication Date
DE602004015557D1 true DE602004015557D1 (de) 2008-09-18

Family

ID=34523127

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004015557T Active DE602004015557D1 (de) 2003-12-17 2004-11-29 Ultraviolett-Quantentopf-Laserdioden auf Basis von Gruppe-III-Nitriden

Country Status (4)

Country Link
US (1) US7138648B2 (de)
EP (1) EP1544968B1 (de)
JP (1) JP2005183964A (de)
DE (1) DE602004015557D1 (de)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050082251A (ko) * 2004-02-18 2005-08-23 삼성전자주식회사 반도체 레이저 디바이스
US9524869B2 (en) 2004-03-11 2016-12-20 Epistar Corporation Nitride-based semiconductor light-emitting device
KR100513923B1 (ko) * 2004-08-13 2005-09-08 재단법인서울대학교산학협력재단 질화물 반도체층을 성장시키는 방법 및 이를 이용하는 질화물 반도체 발광소자
PL211286B1 (pl) * 2004-08-15 2012-04-30 Inst Wysokich Ciśnień Polskiej Akademii Nauk Azotkowa dioda laserowa i sposób wytwarzania azotkowej diody laserowej
US7590161B1 (en) * 2004-10-05 2009-09-15 Photon Systems Electron beam pumped semiconductor laser
US8759791B1 (en) 2004-10-05 2014-06-24 Photon Systems, Inc. Native fluorescence detection methods and detectors for naphthalene and/or other volatile organic compound vapors
US9442070B1 (en) 2004-10-05 2016-09-13 Photon Systems, Inc. Native fluorescence detection methods, devices, and systems for organic compounds
US20060249741A1 (en) * 2005-04-25 2006-11-09 Cao Group, Inc. GaN semiconductor devices with A1N buffer grown at high temperature and method for making the same
JPWO2007026767A1 (ja) * 2005-08-31 2009-03-12 国立大学法人京都大学 発光素子及びその製造方法
KR100742988B1 (ko) * 2005-11-25 2007-07-26 (주)더리즈 ｐ형 질화갈륨계 디바이스 제조방법
KR100735488B1 (ko) * 2006-02-03 2007-07-04 삼성전기주식회사 질화갈륨계 발광다이오드 소자의 제조방법
JP2009527898A (ja) * 2006-02-17 2009-07-30 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 半極性（Ａｌ、Ｉｎ、Ｇａ、Ｂ）Ｎの光電子素子の成長方法
JP4872450B2 (ja) * 2006-05-12 2012-02-08 日立電線株式会社 窒化物半導体発光素子
JP2008118037A (ja) * 2006-11-07 2008-05-22 Sumitomo Electric Ind Ltd 面発光レーザ素子およびその製造方法、ならびに面発光レーザアレイおよびその製造方法
US8211723B2 (en) * 2007-02-12 2012-07-03 The Regents Of The University Of California Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes
US20080219303A1 (en) * 2007-03-02 2008-09-11 Lucent Technologies Inc. Color mixing light source and color control data system
US7502160B2 (en) * 2007-03-02 2009-03-10 Alcatel-Lucent Usa Inc. Speckle reduction in laser-projector images
US7750286B2 (en) * 2007-06-19 2010-07-06 Alcatel-Lucent Usa Inc. Compact image projector having a mirror for reflecting a beam received from a polarization beam splitter back to the polarization beam splitter
KR101305786B1 (ko) * 2007-06-21 2013-09-06 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
JP2010536182A (ja) * 2007-08-08 2010-11-25 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 長波長放射を有する非極性ｉｉｉ窒化物発光ダイオード
DE102007044439B4 (de) 2007-09-18 2022-03-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip mit Quantentopfstruktur
US7723719B2 (en) * 2007-12-14 2010-05-25 Palo Alto Research Center Incorporated Light emitting devices with inhomogeneous quantum well active regions
US20090184976A1 (en) * 2008-01-22 2009-07-23 Alcatel-Lucent System and Method for Color-Compensating a Video Signal Having Reduced Computational Requirements
US8247999B2 (en) * 2008-01-22 2012-08-21 Alcatel Lucent Time division multiplexing a DC-to-DC voltage converter
US8109638B2 (en) * 2008-01-22 2012-02-07 Alcatel Lucent Diffuser configuration for an image projector
US8129669B2 (en) * 2008-01-22 2012-03-06 Alcatel Lucent System and method generating multi-color light for image display having a controller for temporally interleaving the first and second time intervals of directed first and second light beams
US8659852B2 (en) 2008-04-21 2014-02-25 Seagate Technology Llc Write-once magentic junction memory array
US7852663B2 (en) 2008-05-23 2010-12-14 Seagate Technology Llc Nonvolatile programmable logic gates and adders
US7855911B2 (en) 2008-05-23 2010-12-21 Seagate Technology Llc Reconfigurable magnetic logic device using spin torque
US7881098B2 (en) 2008-08-26 2011-02-01 Seagate Technology Llc Memory with separate read and write paths
US7985994B2 (en) 2008-09-29 2011-07-26 Seagate Technology Llc Flux-closed STRAM with electronically reflective insulative spacer
US8169810B2 (en) 2008-10-08 2012-05-01 Seagate Technology Llc Magnetic memory with asymmetric energy barrier
US8039913B2 (en) 2008-10-09 2011-10-18 Seagate Technology Llc Magnetic stack with laminated layer
US8089132B2 (en) 2008-10-09 2012-01-03 Seagate Technology Llc Magnetic memory with phonon glass electron crystal material
CN101728451B (zh) * 2008-10-21 2013-10-30 展晶科技(深圳)有限公司 半导体光电元件
US7852667B2 (en) * 2008-10-27 2010-12-14 Seagate Technology Llc ST-RAM employing a magnetic resonant tunneling diode as a spacer layer
US8045366B2 (en) 2008-11-05 2011-10-25 Seagate Technology Llc STRAM with composite free magnetic element
US8043732B2 (en) 2008-11-11 2011-10-25 Seagate Technology Llc Memory cell with radial barrier
US7826181B2 (en) 2008-11-12 2010-11-02 Seagate Technology Llc Magnetic memory with porous non-conductive current confinement layer
US8289756B2 (en) 2008-11-25 2012-10-16 Seagate Technology Llc Non volatile memory including stabilizing structures
US10753863B1 (en) 2008-11-28 2020-08-25 Photon Systems, Inc. Spectroscopic chemical analysis methods and apparatus
US10598596B1 (en) 2008-11-28 2020-03-24 Photon Systems, Inc. Native fluorescence detection methods, devices, and systems for organic compounds
US7826259B2 (en) 2009-01-29 2010-11-02 Seagate Technology Llc Staggered STRAM cell
DE102009015569B9 (de) 2009-03-30 2023-06-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
JP2010258096A (ja) * 2009-04-22 2010-11-11 Panasonic Electric Works Co Ltd 窒化物半導体発光素子
US8226241B2 (en) * 2009-05-15 2012-07-24 Alcatel Lucent Image projector employing a speckle-reducing laser source
EP2452371A1 (de) * 2009-07-09 2012-05-16 The Regents of the University of California Struktur zur verbesserung der spiegelfacetten-spaltsägeausbeute von (ga,al,in,b)n-laserdioden, die auf nicht polaren oder semipolaren (ga,al,in,b)n-substraten gezüchtet werden
US7999338B2 (en) 2009-07-13 2011-08-16 Seagate Technology Llc Magnetic stack having reference layers with orthogonal magnetization orientation directions
CN101645471B (zh) * 2009-09-07 2011-11-16 中国科学院微电子研究所 一种基于AlGaN的全波段紫外探测器及其制备方法
US20110234985A1 (en) * 2010-03-26 2011-09-29 Alcatel-Lucent Usa Inc. Despeckling laser-image-projection system
EP2667421A1 (de) 2011-01-21 2013-11-27 Panasonic Corporation Lichtemittierendes halbleiterelement aus einer galliumnitridverbindung und mit besagtem lichtemittierenden element ausgerüstete lichtquelle
JP5361925B2 (ja) * 2011-03-08 2013-12-04 株式会社東芝 半導体発光素子およびその製造方法
US8742396B2 (en) * 2012-01-13 2014-06-03 Dowa Electronics Materials Co., Ltd. III nitride epitaxial substrate and deep ultraviolet light emitting device using the same
JP2014072431A (ja) 2012-09-28 2014-04-21 Fujitsu Ltd 半導体装置
JP2014072426A (ja) 2012-09-28 2014-04-21 Fujitsu Ltd 半導体装置及び半導体装置の製造方法
TWI524551B (zh) * 2012-11-19 2016-03-01 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
US10153394B2 (en) 2012-11-19 2018-12-11 Genesis Photonics Inc. Semiconductor structure
TWI535055B (zh) 2012-11-19 2016-05-21 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
JP5521068B1 (ja) * 2013-01-30 2014-06-11 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子
JP2014229812A (ja) * 2013-05-24 2014-12-08 住友電気工業株式会社 窒化物半導体発光素子
US9048387B2 (en) * 2013-08-09 2015-06-02 Qingdao Jason Electric Co., Ltd. Light-emitting device with improved light extraction efficiency
US20170069721A1 (en) 2015-09-08 2017-03-09 M/A-Com Technology Solutions Holdings, Inc. Parasitic channel mitigation using silicon carbide diffusion barrier regions
US9627473B2 (en) * 2015-09-08 2017-04-18 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation in III-nitride material semiconductor structures
TWI738640B (zh) 2016-03-08 2021-09-11 新世紀光電股份有限公司 半導體結構
DE102016109022B4 (de) * 2016-05-17 2021-02-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserdiodenchip
DE102016111929A1 (de) * 2016-06-29 2018-01-04 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Leuchtdiode
TWI717386B (zh) 2016-09-19 2021-02-01 新世紀光電股份有限公司 含氮半導體元件
US11038023B2 (en) 2018-07-19 2021-06-15 Macom Technology Solutions Holdings, Inc. III-nitride material semiconductor structures on conductive silicon substrates
US11448598B1 (en) 2020-07-13 2022-09-20 Photon Systems, Inc. Methods and systems for detection of biohazard signatures in complex clinical and environmental samples
CN114374146A (zh) * 2020-10-15 2022-04-19 山东华光光电子股份有限公司 一种GaAs基915nm/976nm大功率双波长激光器外延片及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2704181B2 (ja) * 1989-02-13 1998-01-26 日本電信電話株式会社 化合物半導体単結晶薄膜の成長方法
JPH06310801A (ja) * 1993-04-26 1994-11-04 Yokogawa Electric Corp 半導体レーザ
JP3713100B2 (ja) * 1996-05-23 2005-11-02 ローム株式会社 半導体発光素子の製法
US5987048A (en) * 1996-07-26 1999-11-16 Kabushiki Kaisha Toshiba Gallium nitride-based compound semiconductor laser and method of manufacturing the same
US6121634A (en) * 1997-02-21 2000-09-19 Kabushiki Kaisha Toshiba Nitride semiconductor light emitting device and its manufacturing method
KR100447367B1 (ko) 1997-03-07 2004-09-08 샤프 가부시키가이샤 다중 양자 웰 구조 활성층을 갖는 질화갈륨계 반도체 발광 소자 및 반도체 레이저 광원 장치
US6563850B1 (en) 1997-10-06 2003-05-13 Sharp Kabushiki Kaisha Light-emitting device and fabricating method thereof
US6841800B2 (en) * 1997-12-26 2005-01-11 Matsushita Electric Industrial Co., Ltd. Light-emitting device comprising a gallium-nitride-group compound-semiconductor
JP2000349393A (ja) * 1999-03-26 2000-12-15 Fuji Xerox Co Ltd 半導体デバイス、面発光型半導体レーザ、及び端面発光型半導体レーザ
US6389051B1 (en) * 1999-04-09 2002-05-14 Xerox Corporation Structure and method for asymmetric waveguide nitride laser diode
JP4030260B2 (ja) * 1999-09-27 2008-01-09 三洋電機株式会社 半導体レーザ素子及びその製造方法
JP4161603B2 (ja) * 2001-03-28 2008-10-08 日亜化学工業株式会社 窒化物半導体素子
JP2003163418A (ja) * 2001-11-29 2003-06-06 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体レーザ

Also Published As

Publication number Publication date
EP1544968B1 (de) 2008-08-06
US20050224781A1 (en) 2005-10-13
EP1544968A3 (de) 2005-11-23
EP1544968A2 (de) 2005-06-22
US7138648B2 (en) 2006-11-21
JP2005183964A (ja) 2005-07-07

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