DE60140962D1 - Vorrichtung zur herstellung von silizium-halbleiter-einkristallen und zugehöriges herstellungsverfahren - Google Patents
Vorrichtung zur herstellung von silizium-halbleiter-einkristallen und zugehöriges herstellungsverfahrenInfo
- Publication number
- DE60140962D1 DE60140962D1 DE60140962T DE60140962T DE60140962D1 DE 60140962 D1 DE60140962 D1 DE 60140962D1 DE 60140962 T DE60140962 T DE 60140962T DE 60140962 T DE60140962 T DE 60140962T DE 60140962 D1 DE60140962 D1 DE 60140962D1
- Authority
- DE
- Germany
- Prior art keywords
- silicon semiconductor
- producing silicon
- semiconductor crystals
- associated preparation
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 239000013078 crystal Substances 0.000 title 1
- 238000002360 preparation method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000333747 | 2000-10-31 | ||
PCT/JP2001/009434 WO2002036861A1 (fr) | 2000-10-31 | 2001-10-26 | Appareil et procede de production de monocristal semi-conducteur de silicium |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60140962D1 true DE60140962D1 (de) | 2010-02-11 |
Family
ID=18809777
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60140962T Expired - Lifetime DE60140962D1 (de) | 2000-10-31 | 2001-10-26 | Vorrichtung zur herstellung von silizium-halbleiter-einkristallen und zugehöriges herstellungsverfahren |
Country Status (7)
Country | Link |
---|---|
US (1) | US6764548B2 (de) |
EP (1) | EP1375705B1 (de) |
JP (1) | JP3849639B2 (de) |
KR (1) | KR100827872B1 (de) |
DE (1) | DE60140962D1 (de) |
TW (1) | TWI252263B (de) |
WO (1) | WO2002036861A1 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006002682A1 (de) * | 2006-01-19 | 2007-08-02 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Einkristalls, Einkristall und Halbleiterscheibe |
FR2911150B1 (fr) * | 2007-01-10 | 2010-08-20 | Fr De Detecteurs Infrarouges S | Dispositif pour realiser la croissance d'un materiau semi-conducteur |
KR100970319B1 (ko) * | 2007-07-24 | 2010-07-15 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 유리 모재 또는 광섬유 제조용 가열로 |
JP2012516572A (ja) * | 2009-01-30 | 2012-07-19 | エイエムジー・アイデアルキャスト・ソーラー・コーポレーション | シード層及びシード層の製造方法 |
KR101540232B1 (ko) * | 2013-09-11 | 2015-07-29 | 주식회사 엘지실트론 | 잉곳성장장치 |
KR101532265B1 (ko) * | 2013-12-03 | 2015-06-29 | 주식회사 엘지실트론 | 단결정 성장 장치 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5264189A (en) * | 1988-02-23 | 1993-11-23 | Mitsubishi Materials Corporation | Apparatus for growing silicon crystals |
JP3203353B2 (ja) | 1993-03-31 | 2001-08-27 | ワッカー・エヌエスシーイー株式会社 | 単結晶引上げ用装置 |
JP2619611B2 (ja) * | 1993-05-31 | 1997-06-11 | 住友シチックス株式会社 | 単結晶の製造装置および製造方法 |
JP2686223B2 (ja) | 1993-11-30 | 1997-12-08 | 住友シチックス株式会社 | 単結晶製造装置 |
US5900059A (en) * | 1996-05-29 | 1999-05-04 | Komatsu Electronic Metals Co., Ltd. | Method and apparatus for fabricating semiconductor single crystal |
JP3101219B2 (ja) | 1996-12-17 | 2000-10-23 | 日本カーボン株式会社 | シリコン単結晶引上げ装置の分割した保温筒 |
JP4689027B2 (ja) * | 2000-10-23 | 2011-05-25 | 株式会社Sumco | 半導体単結晶引上装置 |
-
2001
- 2001-10-26 WO PCT/JP2001/009434 patent/WO2002036861A1/ja active Application Filing
- 2001-10-26 DE DE60140962T patent/DE60140962D1/de not_active Expired - Lifetime
- 2001-10-26 KR KR1020027007766A patent/KR100827872B1/ko active IP Right Grant
- 2001-10-26 EP EP01976841A patent/EP1375705B1/de not_active Expired - Lifetime
- 2001-10-26 US US10/204,278 patent/US6764548B2/en not_active Expired - Lifetime
- 2001-10-26 JP JP2002539596A patent/JP3849639B2/ja not_active Expired - Fee Related
- 2001-10-30 TW TW090126936A patent/TWI252263B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TWI252263B (en) | 2006-04-01 |
KR20020062971A (ko) | 2002-07-31 |
US6764548B2 (en) | 2004-07-20 |
JPWO2002036861A1 (ja) | 2004-03-11 |
KR100827872B1 (ko) | 2008-05-07 |
WO2002036861A1 (fr) | 2002-05-10 |
JP3849639B2 (ja) | 2006-11-22 |
EP1375705A4 (de) | 2009-01-28 |
US20030089300A1 (en) | 2003-05-15 |
EP1375705B1 (de) | 2009-12-30 |
EP1375705A1 (de) | 2004-01-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |