DE60135425D1 - - Google Patents
Info
- Publication number
- DE60135425D1 DE60135425D1 DE60135425T DE60135425T DE60135425D1 DE 60135425 D1 DE60135425 D1 DE 60135425D1 DE 60135425 T DE60135425 T DE 60135425T DE 60135425 T DE60135425 T DE 60135425T DE 60135425 D1 DE60135425 D1 DE 60135425D1
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2902—Materials being Group IVA materials
- H10P14/2905—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3204—Materials thereof being Group IVA semiconducting materials
- H10P14/3208—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3204—Materials thereof being Group IVA semiconducting materials
- H10P14/3211—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3242—Structure
- H10P14/3244—Layer structure
- H10P14/3248—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3242—Structure
- H10P14/3256—Microstructure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
- H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000086117A JP4406995B2 (ja) | 2000-03-27 | 2000-03-27 | 半導体基板および半導体基板の製造方法 |
| PCT/JP2001/002523 WO2001073827A1 (en) | 2000-03-27 | 2001-03-27 | Semiconductor wafer and production method therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE60135425D1 true DE60135425D1 (enExample) | 2008-10-02 |
Family
ID=18602333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60135425T Expired - Fee Related DE60135425D1 (enExample) | 2000-03-27 | 2001-03-27 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6645836B2 (enExample) |
| EP (1) | EP1197992B1 (enExample) |
| JP (1) | JP4406995B2 (enExample) |
| KR (1) | KR20020019037A (enExample) |
| CN (1) | CN1364309A (enExample) |
| DE (1) | DE60135425D1 (enExample) |
| TW (1) | TW495845B (enExample) |
| WO (1) | WO2001073827A1 (enExample) |
Families Citing this family (65)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6744079B2 (en) * | 2002-03-08 | 2004-06-01 | International Business Machines Corporation | Optimized blocking impurity placement for SiGe HBTs |
| WO2002101833A1 (en) * | 2001-06-07 | 2002-12-19 | Amberwave Systems Corporation | Multiple gate insulators with strained semiconductor heterostructures |
| WO2004012243A2 (en) | 2002-07-29 | 2004-02-05 | Amberwave Systems | Selective placement of dislocation arrays |
| GB0220438D0 (en) * | 2002-09-03 | 2002-10-09 | Univ Warwick | Formation of lattice-turning semiconductor substrates |
| CN1286157C (zh) * | 2002-10-10 | 2006-11-22 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
| US6707106B1 (en) * | 2002-10-18 | 2004-03-16 | Advanced Micro Devices, Inc. | Semiconductor device with tensile strain silicon introduced by compressive material in a buried oxide layer |
| US6730576B1 (en) * | 2002-12-31 | 2004-05-04 | Advanced Micro Devices, Inc. | Method of forming a thick strained silicon layer and semiconductor structures incorporating a thick strained silicon layer |
| EP1439570A1 (en) * | 2003-01-14 | 2004-07-21 | Interuniversitair Microelektronica Centrum ( Imec) | SiGe strain relaxed buffer for high mobility devices and a method of fabricating it |
| US6995427B2 (en) | 2003-01-29 | 2006-02-07 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Semiconductor structure for providing strained crystalline layer on insulator and method for fabricating same |
| US7238595B2 (en) * | 2003-03-13 | 2007-07-03 | Asm America, Inc. | Epitaxial semiconductor deposition methods and structures |
| US7682947B2 (en) * | 2003-03-13 | 2010-03-23 | Asm America, Inc. | Epitaxial semiconductor deposition methods and structures |
| US20060225642A1 (en) * | 2003-03-31 | 2006-10-12 | Yoshihiko Kanzawa | Method of forming semiconductor crystal |
| US7517768B2 (en) * | 2003-03-31 | 2009-04-14 | Intel Corporation | Method for fabricating a heterojunction bipolar transistor |
| US6900502B2 (en) * | 2003-04-03 | 2005-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained channel on insulator device |
| WO2005013375A1 (ja) * | 2003-08-05 | 2005-02-10 | Fujitsu Limited | 半導体装置及びその製造方法 |
| DE10344986B4 (de) * | 2003-09-27 | 2008-10-23 | Forschungszentrum Dresden - Rossendorf E.V. | Verfahren zur Erzeugung verbesserter heteroepitaktischer gewachsener Siliziumkarbidschichten auf Siliziumsubstraten |
| US7183593B2 (en) * | 2003-12-05 | 2007-02-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Heterostructure resistor and method of forming the same |
| US7064037B2 (en) * | 2004-01-12 | 2006-06-20 | Chartered Semiconductor Manufacturing Ltd. | Silicon-germanium virtual substrate and method of fabricating the same |
| EP1763893A2 (en) * | 2004-02-27 | 2007-03-21 | ASM America, Inc. | Germanium deposition |
| US20060071213A1 (en) * | 2004-10-04 | 2006-04-06 | Ce Ma | Low temperature selective epitaxial growth of silicon germanium layers |
| KR100708942B1 (ko) * | 2005-12-22 | 2007-04-17 | 매그나칩 반도체 유한회사 | 반도체 웨이퍼 및 그 제조방법 |
| US7560326B2 (en) | 2006-05-05 | 2009-07-14 | International Business Machines Corporation | Silicon/silcion germaninum/silicon body device with embedded carbon dopant |
| US7648853B2 (en) | 2006-07-11 | 2010-01-19 | Asm America, Inc. | Dual channel heterostructure |
| JP4916247B2 (ja) * | 2006-08-08 | 2012-04-11 | トヨタ自動車株式会社 | 炭化珪素半導体装置及びその製造方法 |
| US20080206965A1 (en) * | 2007-02-27 | 2008-08-28 | International Business Machines Corporation | STRAINED SILICON MADE BY PRECIPITATING CARBON FROM Si(1-x-y)GexCy ALLOY |
| US20090108291A1 (en) * | 2007-10-26 | 2009-04-30 | United Microelectronics Corp. | Semiconductor device and method for fabricating the same |
| US8187955B2 (en) | 2009-08-24 | 2012-05-29 | International Business Machines Corporation | Graphene growth on a carbon-containing semiconductor layer |
| US8466502B2 (en) | 2011-03-24 | 2013-06-18 | United Microelectronics Corp. | Metal-gate CMOS device |
| US8445363B2 (en) | 2011-04-21 | 2013-05-21 | United Microelectronics Corp. | Method of fabricating an epitaxial layer |
| US8324059B2 (en) | 2011-04-25 | 2012-12-04 | United Microelectronics Corp. | Method of fabricating a semiconductor structure |
| US8426284B2 (en) | 2011-05-11 | 2013-04-23 | United Microelectronics Corp. | Manufacturing method for semiconductor structure |
| US8481391B2 (en) | 2011-05-18 | 2013-07-09 | United Microelectronics Corp. | Process for manufacturing stress-providing structure and semiconductor device with such stress-providing structure |
| US8431460B2 (en) | 2011-05-27 | 2013-04-30 | United Microelectronics Corp. | Method for fabricating semiconductor device |
| US8716750B2 (en) | 2011-07-25 | 2014-05-06 | United Microelectronics Corp. | Semiconductor device having epitaxial structures |
| US8575043B2 (en) | 2011-07-26 | 2013-11-05 | United Microelectronics Corp. | Semiconductor device and manufacturing method thereof |
| US8647941B2 (en) | 2011-08-17 | 2014-02-11 | United Microelectronics Corp. | Method of forming semiconductor device |
| US8674433B2 (en) | 2011-08-24 | 2014-03-18 | United Microelectronics Corp. | Semiconductor process |
| US8476169B2 (en) | 2011-10-17 | 2013-07-02 | United Microelectronics Corp. | Method of making strained silicon channel semiconductor structure |
| US8691659B2 (en) | 2011-10-26 | 2014-04-08 | United Microelectronics Corp. | Method for forming void-free dielectric layer |
| US8754448B2 (en) | 2011-11-01 | 2014-06-17 | United Microelectronics Corp. | Semiconductor device having epitaxial layer |
| US8647953B2 (en) | 2011-11-17 | 2014-02-11 | United Microelectronics Corp. | Method for fabricating first and second epitaxial cap layers |
| US8709930B2 (en) | 2011-11-25 | 2014-04-29 | United Microelectronics Corp. | Semiconductor process |
| US9127345B2 (en) | 2012-03-06 | 2015-09-08 | Asm America, Inc. | Methods for depositing an epitaxial silicon germanium layer having a germanium to silicon ratio greater than 1:1 using silylgermane and a diluent |
| US9136348B2 (en) | 2012-03-12 | 2015-09-15 | United Microelectronics Corp. | Semiconductor structure and fabrication method thereof |
| US9202914B2 (en) | 2012-03-14 | 2015-12-01 | United Microelectronics Corporation | Semiconductor device and method for fabricating the same |
| US8664069B2 (en) | 2012-04-05 | 2014-03-04 | United Microelectronics Corp. | Semiconductor structure and process thereof |
| US8866230B2 (en) | 2012-04-26 | 2014-10-21 | United Microelectronics Corp. | Semiconductor devices |
| US8835243B2 (en) | 2012-05-04 | 2014-09-16 | United Microelectronics Corp. | Semiconductor process |
| US8951876B2 (en) | 2012-06-20 | 2015-02-10 | United Microelectronics Corp. | Semiconductor device and manufacturing method thereof |
| US8796695B2 (en) | 2012-06-22 | 2014-08-05 | United Microelectronics Corp. | Multi-gate field-effect transistor and process thereof |
| US9171715B2 (en) | 2012-09-05 | 2015-10-27 | Asm Ip Holding B.V. | Atomic layer deposition of GeO2 |
| US8710632B2 (en) | 2012-09-07 | 2014-04-29 | United Microelectronics Corp. | Compound semiconductor epitaxial structure and method for fabricating the same |
| US9117925B2 (en) | 2013-01-31 | 2015-08-25 | United Microelectronics Corp. | Epitaxial process |
| US8753902B1 (en) | 2013-03-13 | 2014-06-17 | United Microelectronics Corp. | Method of controlling etching process for forming epitaxial structure |
| US9034705B2 (en) | 2013-03-26 | 2015-05-19 | United Microelectronics Corp. | Method of forming semiconductor device |
| US9064893B2 (en) | 2013-05-13 | 2015-06-23 | United Microelectronics Corp. | Gradient dopant of strained substrate manufacturing method of semiconductor device |
| US9076652B2 (en) | 2013-05-27 | 2015-07-07 | United Microelectronics Corp. | Semiconductor process for modifying shape of recess |
| US8853060B1 (en) | 2013-05-27 | 2014-10-07 | United Microelectronics Corp. | Epitaxial process |
| US8765546B1 (en) | 2013-06-24 | 2014-07-01 | United Microelectronics Corp. | Method for fabricating fin-shaped field-effect transistor |
| US8895396B1 (en) | 2013-07-11 | 2014-11-25 | United Microelectronics Corp. | Epitaxial Process of forming stress inducing epitaxial layers in source and drain regions of PMOS and NMOS structures |
| US8981487B2 (en) | 2013-07-31 | 2015-03-17 | United Microelectronics Corp. | Fin-shaped field-effect transistor (FinFET) |
| US9224822B2 (en) | 2013-09-10 | 2015-12-29 | Globalfoundries Inc. | High percentage silicon germanium alloy fin formation |
| US9218963B2 (en) | 2013-12-19 | 2015-12-22 | Asm Ip Holding B.V. | Cyclical deposition of germanium |
| TWI620558B (zh) | 2016-12-20 | 2018-04-11 | 富伯生醫科技股份有限公司 | 穿戴式手部復健輔具系統 |
| CN114000120B (zh) | 2022-01-05 | 2022-03-15 | 武汉大学 | 一种基于cvd法的应变金刚石生长掺杂方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2798576B2 (ja) * | 1993-01-27 | 1998-09-17 | 日本電気株式会社 | シリコン膜の成長方法 |
| JPH0722330A (ja) * | 1993-06-29 | 1995-01-24 | Oki Electric Ind Co Ltd | 歪ヘテロエピタキシャル層の形成方法 |
| EP0799495A4 (en) * | 1994-11-10 | 1999-11-03 | Lawrence Semiconductor Researc | Silicon-germanium-carbon compositions and processes thereof |
| JPH11233440A (ja) * | 1998-02-13 | 1999-08-27 | Toshiba Corp | 半導体装置 |
-
2000
- 2000-03-27 JP JP2000086117A patent/JP4406995B2/ja not_active Expired - Fee Related
-
2001
- 2001-03-27 KR KR1020017015163A patent/KR20020019037A/ko not_active Withdrawn
- 2001-03-27 EP EP01915871A patent/EP1197992B1/en not_active Expired - Lifetime
- 2001-03-27 TW TW090107219A patent/TW495845B/zh not_active IP Right Cessation
- 2001-03-27 CN CN01800521A patent/CN1364309A/zh active Pending
- 2001-03-27 WO PCT/JP2001/002523 patent/WO2001073827A1/ja not_active Ceased
- 2001-03-27 DE DE60135425T patent/DE60135425D1/de not_active Expired - Fee Related
- 2001-05-27 US US09/979,305 patent/US6645836B2/en not_active Expired - Lifetime
-
2003
- 2003-04-16 US US10/414,106 patent/US6930026B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1364309A (zh) | 2002-08-14 |
| EP1197992B1 (en) | 2008-08-20 |
| US6930026B2 (en) | 2005-08-16 |
| US20020160584A1 (en) | 2002-10-31 |
| US20030203599A1 (en) | 2003-10-30 |
| WO2001073827A1 (en) | 2001-10-04 |
| KR20020019037A (ko) | 2002-03-09 |
| US6645836B2 (en) | 2003-11-11 |
| JP4406995B2 (ja) | 2010-02-03 |
| EP1197992A4 (en) | 2004-12-29 |
| EP1197992A1 (en) | 2002-04-17 |
| TW495845B (en) | 2002-07-21 |
| JP2001274090A (ja) | 2001-10-05 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: PANASONIC CORP., KADOMA, OSAKA, JP |
|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |