DE60133365D1 - Photodetektor mit senkrechtem Metall-Halbleiter, Mikroresonator und Herstellungsverfahren - Google Patents
Photodetektor mit senkrechtem Metall-Halbleiter, Mikroresonator und HerstellungsverfahrenInfo
- Publication number
- DE60133365D1 DE60133365D1 DE60133365T DE60133365T DE60133365D1 DE 60133365 D1 DE60133365 D1 DE 60133365D1 DE 60133365 T DE60133365 T DE 60133365T DE 60133365 T DE60133365 T DE 60133365T DE 60133365 D1 DE60133365 D1 DE 60133365D1
- Authority
- DE
- Germany
- Prior art keywords
- light
- electrodes
- microresonator
- vertical metal
- incident light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Glass Compositions (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0000468 | 2000-01-14 | ||
FR0000468A FR2803950B1 (fr) | 2000-01-14 | 2000-01-14 | Dispositif de photodetection a microresonateur metal- semiconducteur vertical et procede de fabrication de ce dispositif |
PCT/FR2001/000103 WO2001052329A1 (fr) | 2000-01-14 | 2001-01-12 | Dispositif de photodetection a microresonateur metal-semiconducteur vertical et procede de fabrication de ce dispositif |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60133365D1 true DE60133365D1 (de) | 2008-05-08 |
DE60133365T2 DE60133365T2 (de) | 2009-04-16 |
Family
ID=8845925
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60133365T Expired - Lifetime DE60133365T2 (de) | 2000-01-14 | 2001-01-12 | Photodetektor mit senkrechtem Metall-Halbleiter, Mikroresonator und Herstellungsverfahren |
Country Status (9)
Country | Link |
---|---|
US (1) | US6713832B2 (de) |
EP (1) | EP1247301B1 (de) |
JP (1) | JP4694753B2 (de) |
AT (1) | ATE390717T1 (de) |
AU (1) | AU2001231887A1 (de) |
CA (1) | CA2396951C (de) |
DE (1) | DE60133365T2 (de) |
FR (1) | FR2803950B1 (de) |
WO (1) | WO2001052329A1 (de) |
Families Citing this family (66)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2842945B1 (fr) | 2002-07-25 | 2005-11-11 | Centre Nat Rech Scient | Dispositif de photodetection de type msm et a cavite resonnante comprenant un miroir a reseau d'electrodes metalliques |
CA2564686A1 (en) * | 2004-03-22 | 2005-10-06 | Research Foundation Of The City University Of New York | High responsivity high bandwidth metal-semiconductor-metal optoelectronic device |
US7054528B2 (en) | 2004-04-14 | 2006-05-30 | Lucent Technologies Inc. | Plasmon-enhanced tapered optical fibers |
US7012687B2 (en) | 2004-05-04 | 2006-03-14 | Lucent Technologies Inc. | Spectral analysis with evanescent field excitation |
US7626179B2 (en) * | 2005-09-30 | 2009-12-01 | Virgin Island Microsystems, Inc. | Electron beam induced resonance |
US7586097B2 (en) * | 2006-01-05 | 2009-09-08 | Virgin Islands Microsystems, Inc. | Switching micro-resonant structures using at least one director |
US7791290B2 (en) * | 2005-09-30 | 2010-09-07 | Virgin Islands Microsystems, Inc. | Ultra-small resonating charged particle beam modulator |
US7579609B2 (en) * | 2005-12-14 | 2009-08-25 | Virgin Islands Microsystems, Inc. | Coupling light of light emitting resonator to waveguide |
US7619373B2 (en) * | 2006-01-05 | 2009-11-17 | Virgin Islands Microsystems, Inc. | Selectable frequency light emitter |
US20070190794A1 (en) * | 2006-02-10 | 2007-08-16 | Virgin Islands Microsystems, Inc. | Conductive polymers for the electroplating |
US7605835B2 (en) * | 2006-02-28 | 2009-10-20 | Virgin Islands Microsystems, Inc. | Electro-photographic devices incorporating ultra-small resonant structures |
US7443358B2 (en) * | 2006-02-28 | 2008-10-28 | Virgin Island Microsystems, Inc. | Integrated filter in antenna-based detector |
US20070200063A1 (en) * | 2006-02-28 | 2007-08-30 | Virgin Islands Microsystems, Inc. | Wafer-level testing of light-emitting resonant structures |
CN101438419B (zh) * | 2006-03-13 | 2012-02-22 | 日本电气株式会社 | 光电二极管、用于制造这种光电二极管的方法、光学通信设备和光学互连模块 |
JP4835837B2 (ja) * | 2006-03-31 | 2011-12-14 | 日本電気株式会社 | フォトダイオードとその製造方法 |
US7558490B2 (en) * | 2006-04-10 | 2009-07-07 | Virgin Islands Microsystems, Inc. | Resonant detector for optical signals |
US20070252089A1 (en) * | 2006-04-26 | 2007-11-01 | Virgin Islands Microsystems, Inc. | Charged particle acceleration apparatus and method |
US7876793B2 (en) * | 2006-04-26 | 2011-01-25 | Virgin Islands Microsystems, Inc. | Micro free electron laser (FEL) |
US7646991B2 (en) * | 2006-04-26 | 2010-01-12 | Virgin Island Microsystems, Inc. | Selectable frequency EMR emitter |
US20070264023A1 (en) * | 2006-04-26 | 2007-11-15 | Virgin Islands Microsystems, Inc. | Free space interchip communications |
US7723698B2 (en) | 2006-05-05 | 2010-05-25 | Virgin Islands Microsystems, Inc. | Top metal layer shield for ultra-small resonant structures |
US7746532B2 (en) * | 2006-05-05 | 2010-06-29 | Virgin Island Microsystems, Inc. | Electro-optical switching system and method |
US7986113B2 (en) * | 2006-05-05 | 2011-07-26 | Virgin Islands Microsystems, Inc. | Selectable frequency light emitter |
US7741934B2 (en) * | 2006-05-05 | 2010-06-22 | Virgin Islands Microsystems, Inc. | Coupling a signal through a window |
US7718977B2 (en) | 2006-05-05 | 2010-05-18 | Virgin Island Microsystems, Inc. | Stray charged particle removal device |
US7554083B2 (en) * | 2006-05-05 | 2009-06-30 | Virgin Islands Microsystems, Inc. | Integration of electromagnetic detector on integrated chip |
US7656094B2 (en) | 2006-05-05 | 2010-02-02 | Virgin Islands Microsystems, Inc. | Electron accelerator for ultra-small resonant structures |
US7732786B2 (en) * | 2006-05-05 | 2010-06-08 | Virgin Islands Microsystems, Inc. | Coupling energy in a plasmon wave to an electron beam |
US7586167B2 (en) * | 2006-05-05 | 2009-09-08 | Virgin Islands Microsystems, Inc. | Detecting plasmons using a metallurgical junction |
US20070272931A1 (en) * | 2006-05-05 | 2007-11-29 | Virgin Islands Microsystems, Inc. | Methods, devices and systems producing illumination and effects |
US7569836B2 (en) * | 2006-05-05 | 2009-08-04 | Virgin Islands Microsystems, Inc. | Transmission of data between microchips using a particle beam |
US7728702B2 (en) * | 2006-05-05 | 2010-06-01 | Virgin Islands Microsystems, Inc. | Shielding of integrated circuit package with high-permeability magnetic material |
US8188431B2 (en) | 2006-05-05 | 2012-05-29 | Jonathan Gorrell | Integration of vacuum microelectronic device with integrated circuit |
US7557647B2 (en) * | 2006-05-05 | 2009-07-07 | Virgin Islands Microsystems, Inc. | Heterodyne receiver using resonant structures |
US7710040B2 (en) * | 2006-05-05 | 2010-05-04 | Virgin Islands Microsystems, Inc. | Single layer construction for ultra small devices |
US7728397B2 (en) | 2006-05-05 | 2010-06-01 | Virgin Islands Microsystems, Inc. | Coupled nano-resonating energy emitting structures |
JP4772585B2 (ja) * | 2006-05-10 | 2011-09-14 | 浜松ホトニクス株式会社 | 光検出器 |
US7573045B2 (en) * | 2006-05-15 | 2009-08-11 | Virgin Islands Microsystems, Inc. | Plasmon wave propagation devices and methods |
US7679067B2 (en) * | 2006-05-26 | 2010-03-16 | Virgin Island Microsystems, Inc. | Receiver array using shared electron beam |
US7655934B2 (en) | 2006-06-28 | 2010-02-02 | Virgin Island Microsystems, Inc. | Data on light bulb |
US7560716B2 (en) * | 2006-09-22 | 2009-07-14 | Virgin Islands Microsystems, Inc. | Free electron oscillator |
US7659513B2 (en) * | 2006-12-20 | 2010-02-09 | Virgin Islands Microsystems, Inc. | Low terahertz source and detector |
DE102007063625B4 (de) | 2007-03-15 | 2009-10-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Photoleiter und Verfahren zum Herstellen desselben |
US8467637B2 (en) | 2007-05-01 | 2013-06-18 | Nec Corporation | Waveguide path coupling-type photodiode |
JP5069497B2 (ja) * | 2007-05-24 | 2012-11-07 | 富士フイルム株式会社 | 質量分析用デバイス及びそれを用いた質量分析装置 |
US7990336B2 (en) | 2007-06-19 | 2011-08-02 | Virgin Islands Microsystems, Inc. | Microwave coupled excitation of solid state resonant arrays |
US7960753B2 (en) * | 2007-09-11 | 2011-06-14 | The Aerospace Corporation | Surface plasmon polariton actuated transistors |
US7791053B2 (en) | 2007-10-10 | 2010-09-07 | Virgin Islands Microsystems, Inc. | Depressed anode with plasmon-enabled devices such as ultra-small resonant structures |
EP2109147A1 (de) * | 2008-04-08 | 2009-10-14 | FOM Institute for Atomic and Molueculair Physics | Photoelement mit Oberflächenplasmonresonanz-erzeugenden Nanostrukturen |
FR2940522B1 (fr) * | 2008-12-24 | 2011-03-18 | Commissariat Energie Atomique | Photodetecteur comprenant une region semiconductrice tres mince |
US20100252514A1 (en) * | 2009-04-03 | 2010-10-07 | Min-Ju Chung | Foldable baseball equipment rack |
US8748862B2 (en) * | 2009-07-06 | 2014-06-10 | University Of Seoul Industry Cooperation Foundation | Compound semiconductors |
JP5374643B2 (ja) * | 2009-07-06 | 2013-12-25 | ユニバーシティ オブ ソウル インダストリー コーポレーション ファウンデーション | 長波長放射を検出することができる光検出器 |
US8809834B2 (en) * | 2009-07-06 | 2014-08-19 | University Of Seoul Industry Cooperation Foundation | Photodetector capable of detecting long wavelength radiation |
US8227793B2 (en) | 2009-07-06 | 2012-07-24 | University Of Seoul Industry Cooperation Foundation | Photodetector capable of detecting the visible light spectrum |
US8368990B2 (en) | 2009-08-21 | 2013-02-05 | University Of Seoul Industry Cooperation Foundation | Polariton mode optical switch with composite structure |
FR2954853B1 (fr) | 2009-12-24 | 2011-12-09 | Commissariat Energie Atomique | Photodetecteur a structure plasmon |
FR2959021B1 (fr) | 2010-04-15 | 2012-07-27 | Commissariat Energie Atomique | Filtre optique mono ou multi-frequentiel et detecteur comportant un tel filtre |
FR2971594B1 (fr) * | 2011-02-14 | 2017-03-10 | Centre Nat Rech Scient | Modulateur terahertz |
FR2992470B1 (fr) * | 2012-06-26 | 2014-08-08 | Commissariat Energie Atomique | Element photodetecteur pour une radiation lumineuse infrarouge et photodetecteur comprenant un tel element photodetecteur |
US9520510B2 (en) * | 2013-12-03 | 2016-12-13 | Samsung Display Co., Ltd. | Embedded optical sensors using transverse Fabry-Perot resonator as detectors |
TWI512963B (zh) * | 2014-01-13 | 2015-12-11 | Univ Nat Taiwan | 光偵測器 |
US9929291B2 (en) | 2014-02-06 | 2018-03-27 | Raytheon Company | Photo-detector having plasmonic resonance and photon crystal thermal noise suppression |
DE102014007936A1 (de) | 2014-05-27 | 2015-12-03 | Karlsruher Institut für Technologie | Plasmonisches Bauteil und plasmonischer Photodetektor sowie deren Herstellungsverfahren |
CN112420398B (zh) * | 2020-11-13 | 2021-12-10 | 中国科学技术大学 | 基于等离子体激元增强的光电化学光探测器及其制备方法 |
WO2024038897A1 (ja) * | 2022-08-18 | 2024-02-22 | 国立大学法人東京大学 | 素子、素子の製造方法、及びフォトニックスピンレジスタ |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2100511B (en) * | 1981-05-15 | 1985-02-27 | Rockwell International Corp | Detector for responding to light at a predetermined wavelength and method of making the detector |
US4555622A (en) * | 1982-11-30 | 1985-11-26 | At&T Bell Laboratories | Photodetector having semi-insulating material and a contoured, substantially periodic surface |
US5227648A (en) * | 1991-12-03 | 1993-07-13 | Woo Jong Chun | Resonance cavity photodiode array resolving wavelength and spectrum |
GB9322246D0 (en) * | 1993-10-28 | 1993-12-15 | Hitachi Europ Ltd | Improved metal-semiconductor-metal photodetector |
US5625729A (en) * | 1994-08-12 | 1997-04-29 | Brown; Thomas G. | Optoelectronic device for coupling between an external optical wave and a local optical wave for optical modulators and detectors |
US5631490A (en) * | 1995-01-11 | 1997-05-20 | Lucent Technologies Inc. | Metal semiconductor metal photodetectors |
EP0926742B1 (de) * | 1995-01-23 | 2006-04-05 | National Institute of Advanced Industrial Science and Technology, Independent Administrative Institution | Verharen zur Herstellung einer Lichtemfindliche Vorrichtung |
-
2000
- 2000-01-14 FR FR0000468A patent/FR2803950B1/fr not_active Expired - Fee Related
-
2001
- 2001-01-12 AU AU2001231887A patent/AU2001231887A1/en not_active Abandoned
- 2001-01-12 CA CA002396951A patent/CA2396951C/fr not_active Expired - Fee Related
- 2001-01-12 EP EP01903936A patent/EP1247301B1/de not_active Expired - Lifetime
- 2001-01-12 WO PCT/FR2001/000103 patent/WO2001052329A1/fr active IP Right Grant
- 2001-01-12 AT AT01903936T patent/ATE390717T1/de not_active IP Right Cessation
- 2001-01-12 US US10/169,726 patent/US6713832B2/en not_active Expired - Lifetime
- 2001-01-12 DE DE60133365T patent/DE60133365T2/de not_active Expired - Lifetime
- 2001-01-12 JP JP2001552450A patent/JP4694753B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2803950B1 (fr) | 2002-03-01 |
EP1247301B1 (de) | 2008-03-26 |
EP1247301A1 (de) | 2002-10-09 |
JP2003520438A (ja) | 2003-07-02 |
US6713832B2 (en) | 2004-03-30 |
DE60133365T2 (de) | 2009-04-16 |
JP4694753B2 (ja) | 2011-06-08 |
WO2001052329A1 (fr) | 2001-07-19 |
FR2803950A1 (fr) | 2001-07-20 |
CA2396951C (fr) | 2008-05-06 |
ATE390717T1 (de) | 2008-04-15 |
CA2396951A1 (fr) | 2001-07-19 |
US20030010979A1 (en) | 2003-01-16 |
AU2001231887A1 (en) | 2001-07-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |