ATE390717T1 - Photodetektor mit senkrechtem metall-halbleiter, mikroresonator und herstellungsverfahren - Google Patents

Photodetektor mit senkrechtem metall-halbleiter, mikroresonator und herstellungsverfahren

Info

Publication number
ATE390717T1
ATE390717T1 AT01903936T AT01903936T ATE390717T1 AT E390717 T1 ATE390717 T1 AT E390717T1 AT 01903936 T AT01903936 T AT 01903936T AT 01903936 T AT01903936 T AT 01903936T AT E390717 T1 ATE390717 T1 AT E390717T1
Authority
AT
Austria
Prior art keywords
light
electrodes
vertical metal
metal semiconductor
incident light
Prior art date
Application number
AT01903936T
Other languages
English (en)
Inventor
Fabrice Pardo
Stephane Collin
Roland Teissier
Jean-Luc Pelouard
Original Assignee
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Nat Rech Scient filed Critical Centre Nat Rech Scient
Application granted granted Critical
Publication of ATE390717T1 publication Critical patent/ATE390717T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Glass Compositions (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
AT01903936T 2000-01-14 2001-01-12 Photodetektor mit senkrechtem metall-halbleiter, mikroresonator und herstellungsverfahren ATE390717T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0000468A FR2803950B1 (fr) 2000-01-14 2000-01-14 Dispositif de photodetection a microresonateur metal- semiconducteur vertical et procede de fabrication de ce dispositif

Publications (1)

Publication Number Publication Date
ATE390717T1 true ATE390717T1 (de) 2008-04-15

Family

ID=8845925

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01903936T ATE390717T1 (de) 2000-01-14 2001-01-12 Photodetektor mit senkrechtem metall-halbleiter, mikroresonator und herstellungsverfahren

Country Status (9)

Country Link
US (1) US6713832B2 (de)
EP (1) EP1247301B1 (de)
JP (1) JP4694753B2 (de)
AT (1) ATE390717T1 (de)
AU (1) AU2001231887A1 (de)
CA (1) CA2396951C (de)
DE (1) DE60133365T2 (de)
FR (1) FR2803950B1 (de)
WO (1) WO2001052329A1 (de)

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US7626179B2 (en) * 2005-09-30 2009-12-01 Virgin Island Microsystems, Inc. Electron beam induced resonance
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US7791290B2 (en) * 2005-09-30 2010-09-07 Virgin Islands Microsystems, Inc. Ultra-small resonating charged particle beam modulator
US7579609B2 (en) * 2005-12-14 2009-08-25 Virgin Islands Microsystems, Inc. Coupling light of light emitting resonator to waveguide
US7619373B2 (en) * 2006-01-05 2009-11-17 Virgin Islands Microsystems, Inc. Selectable frequency light emitter
US20070190794A1 (en) * 2006-02-10 2007-08-16 Virgin Islands Microsystems, Inc. Conductive polymers for the electroplating
US7605835B2 (en) * 2006-02-28 2009-10-20 Virgin Islands Microsystems, Inc. Electro-photographic devices incorporating ultra-small resonant structures
US7443358B2 (en) * 2006-02-28 2008-10-28 Virgin Island Microsystems, Inc. Integrated filter in antenna-based detector
US20070200063A1 (en) * 2006-02-28 2007-08-30 Virgin Islands Microsystems, Inc. Wafer-level testing of light-emitting resonant structures
CN101438419B (zh) * 2006-03-13 2012-02-22 日本电气株式会社 光电二极管、用于制造这种光电二极管的方法、光学通信设备和光学互连模块
JP4835837B2 (ja) * 2006-03-31 2011-12-14 日本電気株式会社 フォトダイオードとその製造方法
US7558490B2 (en) * 2006-04-10 2009-07-07 Virgin Islands Microsystems, Inc. Resonant detector for optical signals
US20070252089A1 (en) * 2006-04-26 2007-11-01 Virgin Islands Microsystems, Inc. Charged particle acceleration apparatus and method
US7876793B2 (en) * 2006-04-26 2011-01-25 Virgin Islands Microsystems, Inc. Micro free electron laser (FEL)
US7646991B2 (en) * 2006-04-26 2010-01-12 Virgin Island Microsystems, Inc. Selectable frequency EMR emitter
US20070264023A1 (en) * 2006-04-26 2007-11-15 Virgin Islands Microsystems, Inc. Free space interchip communications
US7723698B2 (en) 2006-05-05 2010-05-25 Virgin Islands Microsystems, Inc. Top metal layer shield for ultra-small resonant structures
US7746532B2 (en) * 2006-05-05 2010-06-29 Virgin Island Microsystems, Inc. Electro-optical switching system and method
US7986113B2 (en) * 2006-05-05 2011-07-26 Virgin Islands Microsystems, Inc. Selectable frequency light emitter
US7741934B2 (en) * 2006-05-05 2010-06-22 Virgin Islands Microsystems, Inc. Coupling a signal through a window
US7718977B2 (en) 2006-05-05 2010-05-18 Virgin Island Microsystems, Inc. Stray charged particle removal device
US7554083B2 (en) * 2006-05-05 2009-06-30 Virgin Islands Microsystems, Inc. Integration of electromagnetic detector on integrated chip
US7656094B2 (en) 2006-05-05 2010-02-02 Virgin Islands Microsystems, Inc. Electron accelerator for ultra-small resonant structures
US7732786B2 (en) * 2006-05-05 2010-06-08 Virgin Islands Microsystems, Inc. Coupling energy in a plasmon wave to an electron beam
US7586167B2 (en) * 2006-05-05 2009-09-08 Virgin Islands Microsystems, Inc. Detecting plasmons using a metallurgical junction
US20070272931A1 (en) * 2006-05-05 2007-11-29 Virgin Islands Microsystems, Inc. Methods, devices and systems producing illumination and effects
US7569836B2 (en) * 2006-05-05 2009-08-04 Virgin Islands Microsystems, Inc. Transmission of data between microchips using a particle beam
US7728702B2 (en) * 2006-05-05 2010-06-01 Virgin Islands Microsystems, Inc. Shielding of integrated circuit package with high-permeability magnetic material
US8188431B2 (en) 2006-05-05 2012-05-29 Jonathan Gorrell Integration of vacuum microelectronic device with integrated circuit
US7557647B2 (en) * 2006-05-05 2009-07-07 Virgin Islands Microsystems, Inc. Heterodyne receiver using resonant structures
US7710040B2 (en) * 2006-05-05 2010-05-04 Virgin Islands Microsystems, Inc. Single layer construction for ultra small devices
US7728397B2 (en) 2006-05-05 2010-06-01 Virgin Islands Microsystems, Inc. Coupled nano-resonating energy emitting structures
JP4772585B2 (ja) * 2006-05-10 2011-09-14 浜松ホトニクス株式会社 光検出器
US7573045B2 (en) * 2006-05-15 2009-08-11 Virgin Islands Microsystems, Inc. Plasmon wave propagation devices and methods
US7679067B2 (en) * 2006-05-26 2010-03-16 Virgin Island Microsystems, Inc. Receiver array using shared electron beam
US7655934B2 (en) 2006-06-28 2010-02-02 Virgin Island Microsystems, Inc. Data on light bulb
US7560716B2 (en) * 2006-09-22 2009-07-14 Virgin Islands Microsystems, Inc. Free electron oscillator
US7659513B2 (en) * 2006-12-20 2010-02-09 Virgin Islands Microsystems, Inc. Low terahertz source and detector
DE102007063625B4 (de) 2007-03-15 2009-10-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photoleiter und Verfahren zum Herstellen desselben
US8467637B2 (en) 2007-05-01 2013-06-18 Nec Corporation Waveguide path coupling-type photodiode
JP5069497B2 (ja) * 2007-05-24 2012-11-07 富士フイルム株式会社 質量分析用デバイス及びそれを用いた質量分析装置
US7990336B2 (en) 2007-06-19 2011-08-02 Virgin Islands Microsystems, Inc. Microwave coupled excitation of solid state resonant arrays
US7960753B2 (en) * 2007-09-11 2011-06-14 The Aerospace Corporation Surface plasmon polariton actuated transistors
US7791053B2 (en) 2007-10-10 2010-09-07 Virgin Islands Microsystems, Inc. Depressed anode with plasmon-enabled devices such as ultra-small resonant structures
EP2109147A1 (de) * 2008-04-08 2009-10-14 FOM Institute for Atomic and Molueculair Physics Photoelement mit Oberflächenplasmonresonanz-erzeugenden Nanostrukturen
FR2940522B1 (fr) * 2008-12-24 2011-03-18 Commissariat Energie Atomique Photodetecteur comprenant une region semiconductrice tres mince
US20100252514A1 (en) * 2009-04-03 2010-10-07 Min-Ju Chung Foldable baseball equipment rack
US8748862B2 (en) * 2009-07-06 2014-06-10 University Of Seoul Industry Cooperation Foundation Compound semiconductors
JP5374643B2 (ja) * 2009-07-06 2013-12-25 ユニバーシティ オブ ソウル インダストリー コーポレーション ファウンデーション 長波長放射を検出することができる光検出器
US8809834B2 (en) * 2009-07-06 2014-08-19 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting long wavelength radiation
US8227793B2 (en) 2009-07-06 2012-07-24 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting the visible light spectrum
US8368990B2 (en) 2009-08-21 2013-02-05 University Of Seoul Industry Cooperation Foundation Polariton mode optical switch with composite structure
FR2954853B1 (fr) 2009-12-24 2011-12-09 Commissariat Energie Atomique Photodetecteur a structure plasmon
FR2959021B1 (fr) 2010-04-15 2012-07-27 Commissariat Energie Atomique Filtre optique mono ou multi-frequentiel et detecteur comportant un tel filtre
FR2971594B1 (fr) * 2011-02-14 2017-03-10 Centre Nat Rech Scient Modulateur terahertz
FR2992470B1 (fr) * 2012-06-26 2014-08-08 Commissariat Energie Atomique Element photodetecteur pour une radiation lumineuse infrarouge et photodetecteur comprenant un tel element photodetecteur
US9520510B2 (en) * 2013-12-03 2016-12-13 Samsung Display Co., Ltd. Embedded optical sensors using transverse Fabry-Perot resonator as detectors
TWI512963B (zh) * 2014-01-13 2015-12-11 Univ Nat Taiwan 光偵測器
US9929291B2 (en) 2014-02-06 2018-03-27 Raytheon Company Photo-detector having plasmonic resonance and photon crystal thermal noise suppression
DE102014007936A1 (de) 2014-05-27 2015-12-03 Karlsruher Institut für Technologie Plasmonisches Bauteil und plasmonischer Photodetektor sowie deren Herstellungsverfahren
CN112420398B (zh) * 2020-11-13 2021-12-10 中国科学技术大学 基于等离子体激元增强的光电化学光探测器及其制备方法
WO2024038897A1 (ja) * 2022-08-18 2024-02-22 国立大学法人東京大学 素子、素子の製造方法、及びフォトニックスピンレジスタ

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US4555622A (en) * 1982-11-30 1985-11-26 At&T Bell Laboratories Photodetector having semi-insulating material and a contoured, substantially periodic surface
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Also Published As

Publication number Publication date
FR2803950B1 (fr) 2002-03-01
EP1247301B1 (de) 2008-03-26
EP1247301A1 (de) 2002-10-09
JP2003520438A (ja) 2003-07-02
US6713832B2 (en) 2004-03-30
DE60133365T2 (de) 2009-04-16
DE60133365D1 (de) 2008-05-08
JP4694753B2 (ja) 2011-06-08
WO2001052329A1 (fr) 2001-07-19
FR2803950A1 (fr) 2001-07-20
CA2396951C (fr) 2008-05-06
CA2396951A1 (fr) 2001-07-19
US20030010979A1 (en) 2003-01-16
AU2001231887A1 (en) 2001-07-24

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