DE60131215T2 - Bildsensorpixellayout zur reduzierung von feststehenden störstrukturen - Google Patents

Bildsensorpixellayout zur reduzierung von feststehenden störstrukturen Download PDF

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Publication number
DE60131215T2
DE60131215T2 DE60131215T DE60131215T DE60131215T2 DE 60131215 T2 DE60131215 T2 DE 60131215T2 DE 60131215 T DE60131215 T DE 60131215T DE 60131215 T DE60131215 T DE 60131215T DE 60131215 T2 DE60131215 T2 DE 60131215T2
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DE
Germany
Prior art keywords
pixel
shutter
photodetector
port
image sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60131215T
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German (de)
English (en)
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DE60131215D1 (de
Inventor
Paul Poo-Kam Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
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Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of DE60131215D1 publication Critical patent/DE60131215D1/de
Application granted granted Critical
Publication of DE60131215T2 publication Critical patent/DE60131215T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/135—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements
    • H04N25/136—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements using complementary colours
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
DE60131215T 2000-04-28 2001-04-13 Bildsensorpixellayout zur reduzierung von feststehenden störstrukturen Expired - Lifetime DE60131215T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/562,712 US7129979B1 (en) 2000-04-28 2000-04-28 Image sensor pixel for global electronic shuttering
US562712 2000-04-28

Publications (2)

Publication Number Publication Date
DE60131215D1 DE60131215D1 (de) 2007-12-20
DE60131215T2 true DE60131215T2 (de) 2008-08-28

Family

ID=24247449

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60131215T Expired - Lifetime DE60131215T2 (de) 2000-04-28 2001-04-13 Bildsensorpixellayout zur reduzierung von feststehenden störstrukturen

Country Status (4)

Country Link
US (1) US7129979B1 (enExample)
EP (1) EP1152472B1 (enExample)
JP (1) JP4832660B2 (enExample)
DE (1) DE60131215T2 (enExample)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6847070B2 (en) 2000-08-09 2005-01-25 Dalsa, Inc. Five transistor CMOS pixel
US7045753B1 (en) 2000-08-09 2006-05-16 Dalsa, Inc. Five transistor CMOS pixel
JP2004312107A (ja) * 2003-04-02 2004-11-04 Olympus Corp 固体撮像装置及びその読み出し方法
KR100871687B1 (ko) * 2004-02-11 2008-12-05 삼성전자주식회사 서브 샘플링 모드에서 디스플레이 품질을 개선한 고체촬상 소자 및 그 구동 방법
JP2005277398A (ja) * 2004-02-25 2005-10-06 Sony Corp Ｃｃｄリニアセンサ
EP1701536A1 (en) 2005-03-08 2006-09-13 Sony Ericsson Mobile Communications AB Method and device for creating pictures, using global shutter and multiple exposures
RU2365059C2 (ru) * 2005-03-08 2009-08-20 Сони Эрикссон Мобайл Коммьюникейшнз Аб Способ и устройство для создания изображений
JP2008533591A (ja) * 2005-03-11 2008-08-21 ハンド ヘルド プロダクツ インコーポレーティッド グローバル電子シャッター制御を持つバーコード読み取り装置
US7611060B2 (en) * 2005-03-11 2009-11-03 Hand Held Products, Inc. System and method to automatically focus an image reader
US7780089B2 (en) 2005-06-03 2010-08-24 Hand Held Products, Inc. Digital picture taking optical reader having hybrid monochrome and color image sensor array
US7568628B2 (en) 2005-03-11 2009-08-04 Hand Held Products, Inc. Bar code reading device with global electronic shutter control
US7770799B2 (en) 2005-06-03 2010-08-10 Hand Held Products, Inc. Optical reader having reduced specular reflection read failures
US20080142598A1 (en) * 2006-12-14 2008-06-19 Sik Piu Kwan Method, system, and apparatus for an electronic freeze frame shutter for a high pass-by image scanner
DE102008009263B3 (de) * 2008-02-15 2009-06-10 Siemens Aktiengesellschaft Verfahren zum automatischen Erkennen, insbesondere bei der Verkehrsüberwachung, von Fahrzeugen oder von Fahrzeugkennzeichen
US8609993B2 (en) * 2008-05-16 2013-12-17 Mitsubishi Materials Corporation Power module substrate, power module, and method for manufacturing power module substrate
US7781718B2 (en) * 2008-05-30 2010-08-24 Omnivision Technologies, Inc. Globally reset image sensor pixels
US8264377B2 (en) 2009-03-02 2012-09-11 Griffith Gregory M Aircraft collision avoidance system
US8089036B2 (en) * 2009-04-30 2012-01-03 Omnivision Technologies, Inc. Image sensor with global shutter and in pixel storage transistor
US8138531B2 (en) * 2009-09-17 2012-03-20 International Business Machines Corporation Structures, design structures and methods of fabricating global shutter pixel sensor cells
WO2011055625A1 (en) * 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and operating method thereof
KR101874784B1 (ko) * 2010-03-08 2018-07-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2011239149A (ja) * 2010-05-10 2011-11-24 Sony Corp 制御装置、カメラシステム及びプログラム
TWI429282B (zh) 2011-02-23 2014-03-01 Pixart Imaging Inc 影像感測器
CN102655572B (zh) * 2011-03-03 2016-06-15 原相科技股份有限公司 图像传感器
CN104270582B (zh) * 2011-03-03 2017-08-22 原相科技股份有限公司 图像传感器
CN102447848B (zh) * 2012-01-17 2013-09-04 中国科学院半导体研究所 Cmos图像传感器全局曝光像素单元
US9354748B2 (en) 2012-02-13 2016-05-31 Microsoft Technology Licensing, Llc Optical stylus interaction
US9870066B2 (en) 2012-03-02 2018-01-16 Microsoft Technology Licensing, Llc Method of manufacturing an input device
US9460029B2 (en) 2012-03-02 2016-10-04 Microsoft Technology Licensing, Llc Pressure sensitive keys
US8873227B2 (en) 2012-03-02 2014-10-28 Microsoft Corporation Flexible hinge support layer
US9298236B2 (en) 2012-03-02 2016-03-29 Microsoft Technology Licensing, Llc Multi-stage power adapter configured to provide a first power level upon initial connection of the power adapter to the host device and a second power level thereafter upon notification from the host device to the power adapter
US9075566B2 (en) 2012-03-02 2015-07-07 Microsoft Technoogy Licensing, LLC Flexible hinge spine
US20130300590A1 (en) 2012-05-14 2013-11-14 Paul Henry Dietz Audio Feedback
US8964379B2 (en) 2012-08-20 2015-02-24 Microsoft Corporation Switchable magnetic lock
US8786767B2 (en) 2012-11-02 2014-07-22 Microsoft Corporation Rapid synchronized lighting and shuttering
US10120420B2 (en) 2014-03-21 2018-11-06 Microsoft Technology Licensing, Llc Lockable display and techniques enabling use of lockable displays
KR102170879B1 (ko) 2014-04-18 2020-10-29 삼성전자주식회사 이미지 센서와 이를 포함하는 이미지 처리 시스템
US10324733B2 (en) 2014-07-30 2019-06-18 Microsoft Technology Licensing, Llc Shutdown notifications
US9526468B2 (en) 2014-09-09 2016-12-27 General Electric Company Multiple frame acquisition for exposure control in X-ray medical imagers
US10163968B2 (en) 2015-01-23 2018-12-25 Dartmouth College Multi-junction pixel image sensor with dielectric reflector between photodetection layers
US10863131B2 (en) 2015-05-20 2020-12-08 Samsung Electronics Co., Ltd. Image sensor including parallel output of pixel signals from a pixel unit and image processing system including the same
US9955099B2 (en) * 2016-06-21 2018-04-24 Hand Held Products, Inc. Minimum height CMOS image sensor
US10560811B2 (en) 2018-02-20 2020-02-11 Intelligent Cleaning Equipment Holdings Co., Ltd. Tracking device, system for tracking objects, and associated method of use
CA3191781A1 (en) * 2020-09-03 2022-03-10 The Research Foundation For The State University Of New York System and method for crystal-to-channel coupling
US11682313B2 (en) 2021-03-17 2023-06-20 Gregory M. Griffith Sensor assembly for use in association with aircraft collision avoidance system and method of using the same
CN119788980B (zh) * 2024-11-14 2025-10-24 北京航天发射技术研究所 一种自准直光管的实时性处理方法及装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3845295A (en) * 1973-05-02 1974-10-29 Rca Corp Charge-coupled radiation sensing circuit with charge skim-off and reset
US4322638A (en) 1980-01-16 1982-03-30 Eastman Kodak Company Image sensor adaptable for fast frame readout
JPH07312726A (ja) * 1994-05-19 1995-11-28 Mitsubishi Electric Corp 固体撮像素子およびその駆動方法
US5789774A (en) * 1996-03-01 1998-08-04 Foveonics, Inc. Active pixel sensor cell that minimizes leakage current
US5631703A (en) 1996-05-29 1997-05-20 Eastman Kodak Company Particular pattern of pixels for a color filter array which is used to derive luminance and chrominance values
US6173894B1 (en) * 1996-08-23 2001-01-16 Psc Inc. Optical reader with addressable pixels
US5898168A (en) 1997-06-12 1999-04-27 International Business Machines Corporation Image sensor pixel circuit
KR100246358B1 (ko) * 1997-09-25 2000-03-15 김영환 전자셔터를 구비한 액티브 픽셀 센서
US5952686A (en) 1997-12-03 1999-09-14 Hewlett-Packard Company Salient integration mode active pixel sensor
US6046444A (en) 1997-12-08 2000-04-04 Intel Corporation High sensitivity active pixel with electronic shutter
KR100266657B1 (ko) * 1998-01-20 2000-10-02 김영환 이중 리셋 구조를 갖는 모스형 증폭 촬상소자
US6667768B1 (en) * 1998-02-17 2003-12-23 Micron Technology, Inc. Photodiode-type pixel for global electronic shutter and reduced lag
US6388241B1 (en) * 1998-02-19 2002-05-14 Photobit Corporation Active pixel color linear sensor with line—packed pixel readout
US6160282A (en) * 1998-04-21 2000-12-12 Foveon, Inc. CMOS image sensor employing silicide exclusion mask to reduce leakage and improve performance
US6466266B1 (en) * 1998-07-28 2002-10-15 Eastman Kodak Company Active pixel sensor with shared row timing signals
US6469332B1 (en) * 1998-09-16 2002-10-22 Micron Technology, Inc. Pinned floating photoreceptor with active pixel sensor
US6624850B1 (en) * 1998-12-30 2003-09-23 Eastman Kodak Company Photogate active pixel sensor with high fill factor and correlated double sampling

Also Published As

Publication number Publication date
EP1152472A3 (en) 2005-06-08
EP1152472B1 (en) 2007-11-07
DE60131215D1 (de) 2007-12-20
JP2002016244A (ja) 2002-01-18
US7129979B1 (en) 2006-10-31
EP1152472A2 (en) 2001-11-07
JP4832660B2 (ja) 2011-12-07

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: LEE, PAUL POO-KAM, ROCHESTER, N.Y., US

8364 No opposition during term of opposition