DE60128560D1 - Ein genauer leistungsdetektor zur verwendung in einem leistungsverstärker - Google Patents

Ein genauer leistungsdetektor zur verwendung in einem leistungsverstärker

Info

Publication number
DE60128560D1
DE60128560D1 DE60128560T DE60128560T DE60128560D1 DE 60128560 D1 DE60128560 D1 DE 60128560D1 DE 60128560 T DE60128560 T DE 60128560T DE 60128560 T DE60128560 T DE 60128560T DE 60128560 D1 DE60128560 D1 DE 60128560D1
Authority
DE
Germany
Prior art keywords
power amplifier
amplifying transistor
performance detector
power
generating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60128560T
Other languages
English (en)
Other versions
DE60128560T2 (de
Inventor
Tirdad Sowlati
Sifen Luo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE60128560D1 publication Critical patent/DE60128560D1/de
Publication of DE60128560T2 publication Critical patent/DE60128560T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/3432—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R21/00—Arrangements for measuring electric power or power factor
    • G01R21/10—Arrangements for measuring electric power or power factor by using square-law characteristics of circuit elements, e.g. diodes, to measure power absorbed by loads of known impedance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/3432—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors
    • H03F3/3435—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors using Darlington amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/456—A scaled replica of a transistor being present in an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/465—Power sensing
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/75—Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
DE60128560T 2000-04-13 2001-04-03 Ein genauer leistungsdetektor zur verwendung in einem leistungsverstärker Expired - Lifetime DE60128560T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/548,726 US6448855B1 (en) 2000-04-13 2000-04-13 Accurate power detection circuit for use in a power amplifier
US548726 2000-04-13
PCT/EP2001/003755 WO2001080421A2 (en) 2000-04-13 2001-04-03 An accurate power detection circuit for use in a power amplifier

Publications (2)

Publication Number Publication Date
DE60128560D1 true DE60128560D1 (de) 2007-07-05
DE60128560T2 DE60128560T2 (de) 2008-01-24

Family

ID=24190146

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60128560T Expired - Lifetime DE60128560T2 (de) 2000-04-13 2001-04-03 Ein genauer leistungsdetektor zur verwendung in einem leistungsverstärker

Country Status (8)

Country Link
US (1) US6448855B1 (de)
EP (1) EP1277274B1 (de)
JP (1) JP5134176B2 (de)
KR (1) KR100805398B1 (de)
CN (1) CN1214520C (de)
AT (1) ATE363152T1 (de)
DE (1) DE60128560T2 (de)
WO (1) WO2001080421A2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2380829A1 (en) * 2000-05-31 2001-12-06 Sony Corporation Power detecting circuit and demodulator comprising the same
US6657425B2 (en) * 2001-06-26 2003-12-02 Koninklijke Philips Electronics N.V. Power measurement circuit including harmonic filter
AU2003279487A1 (en) * 2002-12-16 2004-07-09 Koninklijke Philips Electronics N.V. Self adaptable bias circuit for enabling dynamic control of quiescent current in a linear power amplifier
CN100557949C (zh) * 2003-06-18 2009-11-04 Nxp股份有限公司 输出功率检测电路
EP1557680A1 (de) 2004-01-26 2005-07-27 STMicroelectronics S.r.l. Vorrichtung zur Energieerkennung eines Radiofrequenzsignals
JP2007288533A (ja) * 2006-04-17 2007-11-01 Sharp Corp レベル検波回路、集積回路および通信機器
JP2010041233A (ja) * 2008-08-01 2010-02-18 Panasonic Corp 検波回路及び無線通信システム
CN102955115A (zh) * 2011-08-25 2013-03-06 鸿富锦精密工业（深圳）有限公司 功率测试系统
US8803546B2 (en) * 2011-11-27 2014-08-12 Mediatek Singapore Pte. Ltd. Method for performing power detection, and associated apparatus
KR101548079B1 (ko) 2014-05-19 2015-09-04 홍익대학교 산학협력단 Rf 신호의 이득을 제어하는 전력 검출 장치 및 방법
CN105137169B (zh) * 2015-09-25 2016-08-17 华中科技大学 一种射频功率检测电路

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3197626A (en) 1962-01-08 1965-07-27 Chrysler Corp Logarithmic multiplier-divider
JPS6022391B2 (ja) * 1975-11-17 1985-06-01 三菱電機株式会社 電流２乗回路
JPS57124909A (en) 1981-01-27 1982-08-04 Toshiba Corp Output transistor protection circuit
CA2017904C (en) * 1989-05-31 1993-11-16 Shinichi Miyazaki High frequency amplifier circuit capable of optimizing a total power consumption
JP2976770B2 (ja) 1993-09-01 1999-11-10 ヤマハ株式会社 増幅回路
US5530922A (en) * 1993-11-09 1996-06-25 Motorola, Inc. Power detector with matching impedance for radio frequency signal amplifiers
US5410275A (en) * 1993-12-13 1995-04-25 Motorola Inc. Amplifier circuit suitable for use in a radiotelephone
EP0772273B1 (de) 1995-10-31 2001-08-29 STMicroelectronics S.r.l. Sofortleistungsverlustmesser in einem Leistungstransistor
US5724003A (en) * 1995-12-29 1998-03-03 Maxim Integrated Products, Inc. Methods and apparatus for signal amplitude control systems
FR2765750A1 (fr) * 1997-07-02 1999-01-08 Trt Lucent Technologies Dispositif de reception pour signaux hyperfrequence
JPH11102407A (ja) * 1997-09-26 1999-04-13 Nec Corp 差動回路、ｏｔａおよび２乗回路
WO1999029037A1 (fr) * 1997-11-28 1999-06-10 Hitachi, Ltd. Circuit d'amplification de puissance haute frequence, et appareil de communication mobile utilisant ledit circuit
US5952882A (en) * 1998-01-22 1999-09-14 Maxim Integrated Products, Inc. Gain enhancement for operational amplifiers

Also Published As

Publication number Publication date
EP1277274B1 (de) 2007-05-23
DE60128560T2 (de) 2008-01-24
KR20020022698A (ko) 2002-03-27
WO2001080421A2 (en) 2001-10-25
JP2003531547A (ja) 2003-10-21
ATE363152T1 (de) 2007-06-15
WO2001080421A3 (en) 2002-03-21
CN1366733A (zh) 2002-08-28
EP1277274A2 (de) 2003-01-22
CN1214520C (zh) 2005-08-10
US6448855B1 (en) 2002-09-10
KR100805398B1 (ko) 2008-02-20
JP5134176B2 (ja) 2013-01-30

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL

8364 No opposition during term of opposition
R082 Change of representative

Ref document number: 1277274

Country of ref document: EP

Representative=s name: MUELLER-BORE & PARTNER PATENTANWAELTE, EUROPEA, DE