CN100557949C - 输出功率检测电路 - Google Patents
输出功率检测电路 Download PDFInfo
- Publication number
- CN100557949C CN100557949C CNB2004800169103A CN200480016910A CN100557949C CN 100557949 C CN100557949 C CN 100557949C CN B2004800169103 A CNB2004800169103 A CN B2004800169103A CN 200480016910 A CN200480016910 A CN 200480016910A CN 100557949 C CN100557949 C CN 100557949C
- Authority
- CN
- China
- Prior art keywords
- det
- power
- transistor
- current mirror
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 44
- 238000012360 testing method Methods 0.000 claims abstract description 31
- 125000006850 spacer group Chemical group 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 description 20
- 230000008878 coupling Effects 0.000 description 15
- 238000010168 coupling process Methods 0.000 description 15
- 238000005859 coupling reaction Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 230000006835 compression Effects 0.000 description 5
- 238000007906 compression Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008030 elimination Effects 0.000 description 3
- 238000003379 elimination reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 240000004859 Gamochaeta purpurea Species 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
- H03F3/3432—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/453—Controlling being realised by adding a replica circuit or by using one among multiple identical circuits as a replica circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/462—Indexing scheme relating to amplifiers the current being sensed
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Control Of Amplification And Gain Control (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03101789.0 | 2003-06-18 | ||
EP03101789 | 2003-06-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1806386A CN1806386A (zh) | 2006-07-19 |
CN100557949C true CN100557949C (zh) | 2009-11-04 |
Family
ID=33547738
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800169103A Expired - Fee Related CN100557949C (zh) | 2003-06-18 | 2004-06-15 | 输出功率检测电路 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7274206B2 (zh) |
EP (1) | EP1639699B1 (zh) |
JP (1) | JP2006527957A (zh) |
CN (1) | CN100557949C (zh) |
AT (1) | ATE407477T1 (zh) |
DE (1) | DE602004016330D1 (zh) |
WO (1) | WO2004112239A1 (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008236568A (ja) * | 2007-03-23 | 2008-10-02 | Nippon Telegr & Teleph Corp <Ntt> | パワー検出回路および振幅制限回路 |
WO2008141056A1 (en) * | 2007-05-10 | 2008-11-20 | Skyworks Solutions, Inc. | System and method for power detection in a power amplifier |
US8452243B2 (en) * | 2008-05-08 | 2013-05-28 | Skyworks Solutions, Inc. | System and method for power detection in a power amplifier using an adjustable load |
JP2010041233A (ja) * | 2008-08-01 | 2010-02-18 | Panasonic Corp | 検波回路及び無線通信システム |
EP2432118B1 (en) | 2010-09-15 | 2012-12-26 | Agence Spatiale Européenne | Radio-frequency power amplifier with fast envelope tracking |
CN102955115A (zh) * | 2011-08-25 | 2013-03-06 | 鸿富锦精密工业(深圳)有限公司 | 功率测试系统 |
US9927469B2 (en) | 2014-12-22 | 2018-03-27 | Microsemi Corporation | Log-linear power detector |
US11063576B2 (en) * | 2016-03-11 | 2021-07-13 | Akoustis, Inc. | Front end module for 5.6 GHz Wi-Fi acoustic wave resonator RF filter circuit |
CN110736872B (zh) * | 2019-10-31 | 2021-09-10 | 北京无线电测量研究所 | 一种功率检测电路及功率检测器 |
CN111751693B (zh) * | 2020-03-02 | 2022-10-14 | 上海料聚微电子有限公司 | 一种检测双极型晶体管电流放大倍数的方法和电路 |
JP2021184527A (ja) * | 2020-05-21 | 2021-12-02 | 住友電気工業株式会社 | 電力増幅器 |
US11709190B2 (en) * | 2021-10-30 | 2023-07-25 | Qualcomm Incorporated | Radio frequency (RF) power sensor |
CN117214481B (zh) * | 2023-11-08 | 2024-01-30 | 国网辽宁省电力有限公司 | 一种基于分布式电源接入的电网功率控制用检测设备 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9423158D0 (en) | 1994-11-17 | 1995-01-04 | At & T Global Inf Solution | Radio frequency detector circuit |
JP3154207B2 (ja) * | 1995-05-31 | 2001-04-09 | ソニー株式会社 | 検波器及び送信機 |
JP3922773B2 (ja) * | 1997-11-27 | 2007-05-30 | 三菱電機株式会社 | 電力増幅器 |
WO1999029037A1 (fr) * | 1997-11-28 | 1999-06-10 | Hitachi, Ltd. | Circuit d'amplification de puissance haute frequence, et appareil de communication mobile utilisant ledit circuit |
US6307364B1 (en) * | 1999-08-27 | 2001-10-23 | Rf Micro Devices, Inc. | Power sensor for RF power amplifier |
KR100834251B1 (ko) * | 1999-09-08 | 2008-05-30 | 엔엑스피 비 브이 | 증폭기 및 이를 포함하는 이동전화기 |
JP4014072B2 (ja) * | 2000-03-31 | 2007-11-28 | 株式会社ルネサステクノロジ | 電力増幅器モジュール |
US6448855B1 (en) | 2000-04-13 | 2002-09-10 | Koninklijke Philips Electronics N.V. | Accurate power detection circuit for use in a power amplifier |
CN1252480C (zh) * | 2001-04-05 | 2006-04-19 | 深圳赛意法微电子有限公司 | 低压电流检测放大器电路 |
US6753734B2 (en) * | 2001-06-06 | 2004-06-22 | Anadigics, Inc. | Multi-mode amplifier bias circuit |
KR101007416B1 (ko) * | 2001-10-16 | 2011-01-12 | 엔엑스피 비 브이 | Rf 전력 증폭기 회로 및 이를 포함하는 무선 통신 장치 |
KR100460721B1 (ko) * | 2002-06-29 | 2004-12-08 | 학교법인 한국정보통신학원 | 전력 증폭기의 동작전류 제어 회로 |
KR20050083712A (ko) * | 2002-10-03 | 2005-08-26 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 무선 통신 시스템용 전력 증폭기, 이를 포함한 umts핸드셋 및 그 전력 증폭기의 전력 소비 감소 방법 |
US6778016B2 (en) * | 2002-11-04 | 2004-08-17 | Koninklijke Philips Eletronics N.V. | Simple self-biased cascode amplifier circuit |
-
2004
- 2004-06-15 DE DE602004016330T patent/DE602004016330D1/de not_active Expired - Lifetime
- 2004-06-15 AT AT04736865T patent/ATE407477T1/de not_active IP Right Cessation
- 2004-06-15 EP EP04736865A patent/EP1639699B1/en not_active Expired - Lifetime
- 2004-06-15 WO PCT/IB2004/050902 patent/WO2004112239A1/en active IP Right Grant
- 2004-06-15 CN CNB2004800169103A patent/CN100557949C/zh not_active Expired - Fee Related
- 2004-06-15 JP JP2006516688A patent/JP2006527957A/ja active Pending
- 2004-06-15 US US10/560,638 patent/US7274206B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1639699B1 (en) | 2008-09-03 |
CN1806386A (zh) | 2006-07-19 |
WO2004112239A1 (en) | 2004-12-23 |
US20060186964A1 (en) | 2006-08-24 |
DE602004016330D1 (de) | 2008-10-16 |
JP2006527957A (ja) | 2006-12-07 |
US7274206B2 (en) | 2007-09-25 |
ATE407477T1 (de) | 2008-09-15 |
EP1639699A1 (en) | 2006-03-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V. Effective date: 20071019 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20071019 Address after: Holland Ian Deho Finn Applicant after: NXP B.V. Address before: Holland Ian Deho Finn Applicant before: Koninklijke Philips Electronics N.V. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150914 Address after: Delaware Patentee after: III Holdings 6 LLC Address before: Holland Ian Deho Finn Patentee before: NXP B.V. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091104 |