DE60128440T2 - Verfahren zur Herstellung von mikromechanischen und mikrooptomechanischen Strukturen mit einem aufgebrachten Muster - Google Patents
Verfahren zur Herstellung von mikromechanischen und mikrooptomechanischen Strukturen mit einem aufgebrachten Muster Download PDFInfo
- Publication number
- DE60128440T2 DE60128440T2 DE60128440T DE60128440T DE60128440T2 DE 60128440 T2 DE60128440 T2 DE 60128440T2 DE 60128440 T DE60128440 T DE 60128440T DE 60128440 T DE60128440 T DE 60128440T DE 60128440 T2 DE60128440 T2 DE 60128440T2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- minutes
- etch
- polysilicon
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000010410 layer Substances 0.000 claims description 118
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 58
- 229920005591 polysilicon Polymers 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 48
- 230000003287 optical effect Effects 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 19
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 68
- 238000001020 plasma etching Methods 0.000 description 65
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 32
- 229920002120 photoresistant polymer Polymers 0.000 description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 239000010409 thin film Substances 0.000 description 21
- 239000013078 crystal Substances 0.000 description 19
- 238000000206 photolithography Methods 0.000 description 18
- 238000000137 annealing Methods 0.000 description 17
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 17
- 238000005459 micromachining Methods 0.000 description 17
- 150000004767 nitrides Chemical class 0.000 description 15
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 11
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 239000000460 chlorine Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000001465 metallisation Methods 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 239000003973 paint Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N hydrofluoric acid Substances F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 208000005647 Mumps Diseases 0.000 description 1
- 206010067482 No adverse event Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000002120 advanced silicon etching Methods 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- 230000027455 binding Effects 0.000 description 1
- 238000009739 binding Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 208000035475 disorder Diseases 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 208000010805 mumps infectious disease Diseases 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0065—Mechanical properties
- B81C1/00666—Treatments for controlling internal stress or strain in MEMS structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/047—Optical MEMS not provided for in B81B2201/042 - B81B2201/045
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0118—Cantilevers
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/724,506 US6479311B1 (en) | 2000-11-27 | 2000-11-27 | Process for manufacturing micromechanical and microoptomechanical structures with pre-applied patterning |
| US724506 | 2000-11-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60128440D1 DE60128440D1 (de) | 2007-06-28 |
| DE60128440T2 true DE60128440T2 (de) | 2008-01-24 |
Family
ID=24910687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60128440T Expired - Lifetime DE60128440T2 (de) | 2000-11-27 | 2001-11-27 | Verfahren zur Herstellung von mikromechanischen und mikrooptomechanischen Strukturen mit einem aufgebrachten Muster |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6479311B1 (enExample) |
| EP (1) | EP1213260B1 (enExample) |
| JP (1) | JP3986047B2 (enExample) |
| DE (1) | DE60128440T2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6506620B1 (en) * | 2000-11-27 | 2003-01-14 | Microscan Systems Incorporated | Process for manufacturing micromechanical and microoptomechanical structures with backside metalization |
| US20040240034A1 (en) * | 2001-11-30 | 2004-12-02 | Scharf Bruce R. | Diffraction compensation using a patterned reflector |
| US6755982B2 (en) * | 2002-01-07 | 2004-06-29 | Xerox Corporation | Self-aligned micro hinges |
| US7067355B2 (en) * | 2004-05-26 | 2006-06-27 | Hewlett-Packard Development Company, L.P. | Package having bond-sealed underbump |
| US20090088618A1 (en) | 2007-10-01 | 2009-04-02 | Arneson Michael R | System and Method for Manufacturing a Swallowable Sensor Device |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6149190A (en) | 1993-05-26 | 2000-11-21 | Kionix, Inc. | Micromechanical accelerometer for automotive applications |
| DE4318466B4 (de) | 1993-06-03 | 2004-12-09 | Robert Bosch Gmbh | Verfahren zur Herstellung eines mikromechanischen Sensors |
| US5476819A (en) | 1993-07-26 | 1995-12-19 | Litton Systems, Inc. | Substrate anchor for undercut silicon on insulator microstructures |
| US5589083A (en) | 1993-12-11 | 1996-12-31 | Electronics And Telecommunications Research Institute | Method of manufacturing microstructure by the anisotropic etching and bonding of substrates |
| US5660680A (en) | 1994-03-07 | 1997-08-26 | The Regents Of The University Of California | Method for fabrication of high vertical aspect ratio thin film structures |
| US5645684A (en) | 1994-03-07 | 1997-07-08 | The Regents Of The University Of California | Multilayer high vertical aspect ratio thin film structures |
| US5484073A (en) | 1994-03-28 | 1996-01-16 | I/O Sensors, Inc. | Method for fabricating suspension members for micromachined sensors |
| US5569355A (en) | 1995-01-11 | 1996-10-29 | Center For Advanced Fiberoptic Applications | Method for fabrication of microchannel electron multipliers |
| US6084257A (en) | 1995-05-24 | 2000-07-04 | Lucas Novasensor | Single crystal silicon sensor with high aspect ratio and curvilinear structures |
| SE9502258D0 (sv) | 1995-06-21 | 1995-06-21 | Pharmacia Biotech Ab | Method for the manufacture of a membrane-containing microstructure |
| DE19603829A1 (de) | 1996-02-02 | 1997-08-07 | Daimler Benz Ag | Verfahren zur Herstellung von mikromechanischen Strukturen aus Silizium |
| US6074890A (en) * | 1998-01-08 | 2000-06-13 | Rockwell Science Center, Llc | Method of fabricating suspended single crystal silicon micro electro mechanical system (MEMS) devices |
| US5853960A (en) | 1998-03-18 | 1998-12-29 | Trw Inc. | Method for producing a micro optical semiconductor lens |
| US6117344A (en) | 1998-03-20 | 2000-09-12 | Borealis Technical Limited | Method for manufacturing low work function surfaces |
| US6002507A (en) * | 1998-12-01 | 1999-12-14 | Xerox Corpoation | Method and apparatus for an integrated laser beam scanner |
| US6014240A (en) | 1998-12-01 | 2000-01-11 | Xerox Corporation | Method and apparatus for an integrated laser beam scanner using a carrier substrate |
| US6238581B1 (en) | 1998-12-18 | 2001-05-29 | Eastman Kodak Company | Process for manufacturing an electro-mechanical grating device |
-
2000
- 2000-11-27 US US09/724,506 patent/US6479311B1/en not_active Expired - Lifetime
-
2001
- 2001-11-27 DE DE60128440T patent/DE60128440T2/de not_active Expired - Lifetime
- 2001-11-27 JP JP2001360360A patent/JP3986047B2/ja not_active Expired - Fee Related
- 2001-11-27 EP EP01128169A patent/EP1213260B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP3986047B2 (ja) | 2007-10-03 |
| JP2002283296A (ja) | 2002-10-03 |
| EP1213260A3 (en) | 2004-06-16 |
| EP1213260A2 (en) | 2002-06-12 |
| DE60128440D1 (de) | 2007-06-28 |
| EP1213260B1 (en) | 2007-05-16 |
| US6479311B1 (en) | 2002-11-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |