DE60108730D1 - EEPROM Schaltung, Spannungsreferenzschaltung und Verfahren zur Besorgung eines Spannungsreferenz mit einem niedrigen Temperaturkoeffizient - Google Patents
EEPROM Schaltung, Spannungsreferenzschaltung und Verfahren zur Besorgung eines Spannungsreferenz mit einem niedrigen TemperaturkoeffizientInfo
- Publication number
- DE60108730D1 DE60108730D1 DE60108730T DE60108730T DE60108730D1 DE 60108730 D1 DE60108730 D1 DE 60108730D1 DE 60108730 T DE60108730 T DE 60108730T DE 60108730 T DE60108730 T DE 60108730T DE 60108730 D1 DE60108730 D1 DE 60108730D1
- Authority
- DE
- Germany
- Prior art keywords
- voltage reference
- circuit
- low temperature
- temperature coefficient
- providing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000001419 dependent effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/005—Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Control Of Electrical Variables (AREA)
- Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP01401682A EP1271549B1 (de) | 2001-06-26 | 2001-06-26 | EEPROM Schaltung, Spannungsreferenzschaltung und Verfahren zur Besorgung eines Spannungsreferenz mit einem niedrigen Temperaturkoeffizient |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60108730D1 true DE60108730D1 (de) | 2005-03-10 |
| DE60108730T2 DE60108730T2 (de) | 2005-07-14 |
Family
ID=8182782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60108730T Expired - Lifetime DE60108730T2 (de) | 2001-06-26 | 2001-06-26 | EEPROM Schaltung, Spannungsreferenzschaltung und Verfahren zur Besorgung eines Spannungsreferenz mit einem niedrigen Temperaturkoeffizient |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6882582B2 (de) |
| EP (1) | EP1271549B1 (de) |
| JP (1) | JP2004521573A (de) |
| KR (1) | KR20030093179A (de) |
| CN (1) | CN1465074A (de) |
| AT (1) | ATE288618T1 (de) |
| DE (1) | DE60108730T2 (de) |
| TW (1) | TW550575B (de) |
| WO (1) | WO2003003378A1 (de) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7429888B2 (en) * | 2004-01-05 | 2008-09-30 | Intersil Americas, Inc. | Temperature compensation for floating gate circuits |
| US7149123B2 (en) * | 2004-04-06 | 2006-12-12 | Catalyst Semiconductor, Inc. | Non-volatile CMOS reference circuit |
| JP5168927B2 (ja) * | 2007-02-14 | 2013-03-27 | 株式会社リコー | 半導体装置およびそのトリミング方法 |
| US8878511B2 (en) * | 2010-02-04 | 2014-11-04 | Semiconductor Components Industries, Llc | Current-mode programmable reference circuits and methods therefor |
| US8680840B2 (en) * | 2010-02-11 | 2014-03-25 | Semiconductor Components Industries, Llc | Circuits and methods of producing a reference current or voltage |
| KR101809202B1 (ko) | 2012-01-31 | 2017-12-14 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 읽기 방법 |
| US9489004B2 (en) | 2014-05-30 | 2016-11-08 | Globalfoundries Singapore Pte. Ltd. | Bandgap reference voltage generator circuits |
| US20170117053A1 (en) * | 2015-10-27 | 2017-04-27 | Sandisk Technologies Inc. | Systems and methods to compensate for threshold voltage shifts |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4559694A (en) * | 1978-09-13 | 1985-12-24 | Hitachi, Ltd. | Method of manufacturing a reference voltage generator device |
| US5541878A (en) * | 1991-05-09 | 1996-07-30 | Synaptics, Incorporated | Writable analog reference voltage storage device |
| US5319370A (en) * | 1992-08-31 | 1994-06-07 | Crystal Semiconductor, Inc. | Analog-to-digital converter with a continuously calibrated voltage reference |
| US5430670A (en) * | 1993-11-08 | 1995-07-04 | Elantec, Inc. | Differential analog memory cell and method for adjusting same |
| JPH11154397A (ja) * | 1997-11-20 | 1999-06-08 | Nec Ic Microcomput Syst Ltd | 不揮発性半導体メモリ |
| US5933370A (en) * | 1998-01-09 | 1999-08-03 | Information Storage Devices, Inc. | Trimbit circuit for flash memory |
| JP2000155617A (ja) * | 1998-11-19 | 2000-06-06 | Mitsubishi Electric Corp | 内部電圧発生回路 |
-
2001
- 2001-06-26 EP EP01401682A patent/EP1271549B1/de not_active Expired - Lifetime
- 2001-06-26 AT AT01401682T patent/ATE288618T1/de not_active IP Right Cessation
- 2001-06-26 DE DE60108730T patent/DE60108730T2/de not_active Expired - Lifetime
-
2002
- 2002-03-29 CN CN02802179A patent/CN1465074A/zh active Pending
- 2002-03-29 WO PCT/EP2002/003700 patent/WO2003003378A1/en active Application Filing
- 2002-03-29 US US10/362,467 patent/US6882582B2/en not_active Expired - Fee Related
- 2002-03-29 JP JP2003509463A patent/JP2004521573A/ja active Pending
- 2002-03-29 KR KR10-2003-7002816A patent/KR20030093179A/ko not_active Application Discontinuation
- 2002-04-10 TW TW091107183A patent/TW550575B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW550575B (en) | 2003-09-01 |
| JP2004521573A (ja) | 2004-07-15 |
| US20040004800A1 (en) | 2004-01-08 |
| WO2003003378A1 (en) | 2003-01-09 |
| ATE288618T1 (de) | 2005-02-15 |
| EP1271549B1 (de) | 2005-02-02 |
| US6882582B2 (en) | 2005-04-19 |
| DE60108730T2 (de) | 2005-07-14 |
| EP1271549A1 (de) | 2003-01-02 |
| KR20030093179A (ko) | 2003-12-06 |
| CN1465074A (zh) | 2003-12-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |