DE60041353D1 - SPUTTERTARGET, TRANSPARENT CONDUCTIVE OXID AND PREPARATION PROCESS FOR SPUTTERTARGET - Google Patents

SPUTTERTARGET, TRANSPARENT CONDUCTIVE OXID AND PREPARATION PROCESS FOR SPUTTERTARGET

Info

Publication number
DE60041353D1
DE60041353D1 DE60041353T DE60041353T DE60041353D1 DE 60041353 D1 DE60041353 D1 DE 60041353D1 DE 60041353 T DE60041353 T DE 60041353T DE 60041353 T DE60041353 T DE 60041353T DE 60041353 D1 DE60041353 D1 DE 60041353D1
Authority
DE
Germany
Prior art keywords
sputtertarget
transparent conductive
preparation process
oxid
conductive oxid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60041353T
Other languages
German (de)
Inventor
Kazuyoshi Inoue
Tadao Shibuya
Akira Kaijo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Kosan Co Ltd
Original Assignee
Idemitsu Kosan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Application granted granted Critical
Publication of DE60041353D1 publication Critical patent/DE60041353D1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605Treating the starting powders individually or as mixtures
    • C04B35/6261Milling
    • C04B35/6262Milling of calcined, sintered clinker or ceramics
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64Burning or sintering processes
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64Burning or sintering processes
    • C04B35/645Pressure sintering
    • C04B35/6455Hot isostatic pressing
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/086Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/21Oxides
    • C03C2217/211SnO2
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/21Oxides
    • C03C2217/216ZnO
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/21Oxides
    • C03C2217/23Mixtures
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/10Deposition methods
    • C03C2218/15Deposition methods from the vapour phase
    • C03C2218/154Deposition methods from the vapour phase by sputtering
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3284Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3293Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/44Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/44Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
    • C04B2235/441Alkoxides, e.g. methoxide, tert-butoxide
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/44Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
    • C04B2235/443Nitrates or nitrites
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/44Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
    • C04B2235/449Organic acids, e.g. EDTA, citrate, acetate, oxalate
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54Particle size related information
    • C04B2235/5418Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5436Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/66Specific sintering techniques, e.g. centrifugal sintering
    • C04B2235/661Multi-step sintering
    • C04B2235/662Annealing after sintering
    • C04B2235/664Reductive annealing
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/76Crystal structural characteristics, e.g. symmetry
    • C04B2235/762Cubic symmetry, e.g. beta-SiC
    • C04B2235/763Spinel structure AB2O4
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/76Crystal structural characteristics, e.g. symmetry
    • C04B2235/767Hexagonal symmetry, e.g. beta-Si3N4, beta-Sialon, alpha-SiC or hexa-ferrites
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/77Density
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/78Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
    • C04B2235/785Submicron sized grains, i.e. from 0,1 to 1 micron
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/78Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
    • C04B2235/786Micrometer sized grains, i.e. from 1 to 100 micron
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/963Surface properties, e.g. surface roughness
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9646Optical properties
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9646Optical properties
    • C04B2235/9653Translucent or transparent ceramics other than alumina
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/13439Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
DE60041353T 1999-11-25 2000-11-22 SPUTTERTARGET, TRANSPARENT CONDUCTIVE OXID AND PREPARATION PROCESS FOR SPUTTERTARGET Expired - Lifetime DE60041353D1 (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP33373199 1999-11-25
JP33373099 1999-11-25
JP2000027741 2000-02-04
JP2000042378 2000-02-21
JP2000111505 2000-04-13
JP2000118924 2000-04-20
PCT/JP2000/008236 WO2001038599A1 (en) 1999-11-25 2000-11-22 Sputtering target, transparent conductive oxide, and method for preparing sputtering target

Publications (1)

Publication Number Publication Date
DE60041353D1 true DE60041353D1 (en) 2009-02-26

Family

ID=27554639

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60042431T Expired - Lifetime DE60042431D1 (en) 1999-11-25 2000-11-22 Tranparent conductive oxide
DE60041353T Expired - Lifetime DE60041353D1 (en) 1999-11-25 2000-11-22 SPUTTERTARGET, TRANSPARENT CONDUCTIVE OXID AND PREPARATION PROCESS FOR SPUTTERTARGET

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE60042431T Expired - Lifetime DE60042431D1 (en) 1999-11-25 2000-11-22 Tranparent conductive oxide

Country Status (8)

Country Link
US (1) US6669830B1 (en)
EP (3) EP1777321A1 (en)
JP (3) JP4850378B2 (en)
KR (3) KR100849258B1 (en)
CN (1) CN1195886C (en)
DE (2) DE60042431D1 (en)
HK (1) HK1050720A1 (en)
WO (1) WO2001038599A1 (en)

Families Citing this family (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1195886C (en) * 1999-11-25 2005-04-06 出光兴产株式会社 Sputtering target, transparent conductive oxide and method for producing the sputtering target
JP4234006B2 (en) * 2001-07-17 2009-03-04 出光興産株式会社 Sputtering target and transparent conductive film
CN1545567B (en) * 2001-08-02 2012-03-28 出光兴产株式会社 Sputtering target, transparent conductive film, and method for producing same
WO2003031673A1 (en) * 2001-10-02 2003-04-17 Advanced Systems Of Technology Incubation Thin metal oxide film and process for producing the same
US6759005B2 (en) 2002-07-23 2004-07-06 Heraeus, Inc. Fabrication of B/C/N/O/Si doped sputtering targets
US20070189916A1 (en) * 2002-07-23 2007-08-16 Heraeus Incorporated Sputtering targets and methods for fabricating sputtering targets having multiple materials
CN101260509A (en) * 2002-08-02 2008-09-10 出光兴产株式会社 Sputtering target, sintered body, conductive film produced using the same, organic EL element, and substrate used for the same
US7067843B2 (en) * 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP2004149883A (en) * 2002-10-31 2004-05-27 Mitsui Mining & Smelting Co Ltd Sputtering target for high resistance transparent conductive film, and manufacturing method of high resistance transparent conductive film
KR20050097538A (en) * 2003-02-05 2005-10-07 이데미쓰 고산 가부시키가이샤 Method for manufacturing semi-transparent semi-reflective electrode substrate, reflective element substrate, method for manufacturing same, etching composition used for the method for manufacturing the reflective electrode substrate
WO2004105054A1 (en) * 2003-05-20 2004-12-02 Idemitsu Kosan Co. Ltd. Amorphous transparent conductive film, sputtering target as its raw material, amorphous transparent electrode substrate, process for producing the same and color filter for liquid crystal display
KR20060061366A (en) * 2003-09-03 2006-06-07 가부시키 가이샤 닛코 마테리알즈 Target for sputtering
CN1918672B (en) * 2004-03-09 2012-10-03 出光兴产株式会社 Thin film transistor, thin film transistor substrate, liquid crystal display device, sputtering target, transparent conductive film, transparent electrode, and method for producing same
US7300617B2 (en) * 2004-05-13 2007-11-27 David Gerling Method of making fusion cast articles
JP2006330021A (en) * 2005-05-23 2006-12-07 Mitsubishi Electric Corp Liquid crystal display device
US7597964B2 (en) * 2005-08-02 2009-10-06 Guardian Industries Corp. Thermally tempered coated article with transparent conductive oxide (TCO) coating
JP4947942B2 (en) * 2005-09-20 2012-06-06 出光興産株式会社 Sputtering target
JP4933756B2 (en) * 2005-09-01 2012-05-16 出光興産株式会社 Sputtering target
WO2007026783A1 (en) * 2005-09-01 2007-03-08 Idemitsu Kosan Co., Ltd. Sputtering target, transparent conductive film and transparent electrode
JP4804867B2 (en) * 2005-10-18 2011-11-02 出光興産株式会社 Transparent conductive film, transparent electrode, electrode substrate and manufacturing method thereof
JP4846726B2 (en) 2005-09-20 2011-12-28 出光興産株式会社 Sputtering target, transparent conductive film and transparent electrode
JP4960244B2 (en) * 2005-09-22 2012-06-27 出光興産株式会社 Oxide material and sputtering target
JP5188182B2 (en) 2005-09-27 2013-04-24 出光興産株式会社 Sputtering target, transparent conductive film, and transparent electrode for touch panel
JP4805648B2 (en) * 2005-10-19 2011-11-02 出光興産株式会社 Semiconductor thin film and manufacturing method thereof
US7998372B2 (en) 2005-11-18 2011-08-16 Idemitsu Kosan Co., Ltd. Semiconductor thin film, method for manufacturing the same, thin film transistor, and active-matrix-driven display panel
JP5376750B2 (en) * 2005-11-18 2013-12-25 出光興産株式会社 Semiconductor thin film, manufacturing method thereof, thin film transistor, active matrix drive display panel
WO2007058248A1 (en) * 2005-11-18 2007-05-24 Idemitsu Kosan Co., Ltd. Semiconductor thin film, method for producing same, and thin film transistor
JPWO2007069415A1 (en) * 2005-12-13 2009-05-21 出光興産株式会社 Sintered body for vacuum deposition
JP5000131B2 (en) * 2005-12-26 2012-08-15 出光興産株式会社 Transparent electrode film and electronic device
US8084685B2 (en) 2006-01-12 2011-12-27 Heliovolt Corporation Apparatus for making controlled segregated phase domain structures
US20070184573A1 (en) * 2006-02-08 2007-08-09 Guardian Industries Corp., Method of making a thermally treated coated article with transparent conductive oxide (TCO) coating for use in a semiconductor device
JP4816116B2 (en) * 2006-02-08 2011-11-16 住友金属鉱山株式会社 Oxide sintered body for sputtering target, oxide film obtained using the same, and transparent substrate including the same
JP4552950B2 (en) 2006-03-15 2010-09-29 住友金属鉱山株式会社 Oxide sintered body for target, manufacturing method thereof, manufacturing method of transparent conductive film using the same, and transparent conductive film obtained
JP5265090B2 (en) * 2006-04-14 2013-08-14 豊田合成株式会社 Semiconductor light emitting device and lamp
KR100755591B1 (en) * 2006-06-22 2007-09-06 고려대학교 산학협력단 Method of manufacturing nitride luminescent diode
US8007693B2 (en) * 2006-08-24 2011-08-30 Jx Nippon Mining & Metals Corporation Zinc oxide based transparent electric conductor, sputtering target for forming of the conductor and process for producing the target
JP5201566B2 (en) * 2006-12-11 2013-06-05 豊田合成株式会社 Compound semiconductor light emitting device and manufacturing method thereof
TWI478347B (en) * 2007-02-09 2015-03-21 Idemitsu Kosan Co A thin film transistor, a thin film transistor substrate, and an image display device, and an image display device, and a semiconductor device
JP2008235877A (en) 2007-02-19 2008-10-02 Showa Denko Kk Solar cell and manufacturing method therefor
JP5244331B2 (en) * 2007-03-26 2013-07-24 出光興産株式会社 Amorphous oxide semiconductor thin film, manufacturing method thereof, thin film transistor manufacturing method, field effect transistor, light emitting device, display device, and sputtering target
US8034317B2 (en) * 2007-06-18 2011-10-11 Heliovolt Corporation Assemblies of anisotropic nanoparticles
US20090075034A1 (en) * 2007-09-19 2009-03-19 Nobuhiro Nishita Patterning method and display device
JP5372776B2 (en) * 2007-12-25 2013-12-18 出光興産株式会社 Oxide semiconductor field effect transistor and manufacturing method thereof
JP2009260237A (en) * 2008-01-24 2009-11-05 Showa Denko Kk Compound semiconductor light-emitting element and its manufacturing method, conduction type translucent electrode for compound semiconductor light-emitting element, lamp, electronic device, and mechanical apparatus
KR101240167B1 (en) * 2008-02-13 2013-03-07 삼성코닝정밀소재 주식회사 Indium tin oxide sintered body and indium tin oxide target
JP5520496B2 (en) * 2008-02-19 2014-06-11 昭和電工株式会社 Manufacturing method of solar cell
CN101260507B (en) * 2008-04-24 2010-12-15 复旦大学 P-type semiconductor nickel-doping copper oxide target material and preparation method thereof
US9045823B2 (en) * 2008-06-10 2015-06-02 Jx Nippon Mining & Metals Corporation Sintered oxide compact target for sputtering and process for producing the same
KR101516050B1 (en) * 2008-08-27 2015-05-04 이데미쓰 고산 가부시키가이샤 Field-effect transistor, method for manufacturing same, and sputtering target
KR101549295B1 (en) 2008-12-12 2015-09-01 이데미쓰 고산 가부시키가이샤 Composite oxide sintered body and sputtering target comprising same
KR20110111369A (en) * 2009-02-04 2011-10-11 헬리오볼트 코오퍼레이션 Method of forming an indium-containing transparent conductive oxide film, metal targets used in the method and photovoltaic devices utilizing said films
JP5416991B2 (en) * 2009-03-03 2014-02-12 Jx日鉱日石金属株式会社 Oxide sintered body target, method for producing the target, transparent conductive film, and method for producing the transparent conductive film
CN101885609B (en) * 2009-05-14 2012-09-05 中国科学院宁波材料技术与工程研究所 Method for preparing zinc oxide-based ceramic sputtering target material at intermediate temperature
JP2011009502A (en) * 2009-06-26 2011-01-13 Showa Denko Kk Light emitting element and method of manufacturing the same, lamp, electronic apparatus, and mechanical apparatus
WO2011028269A1 (en) * 2009-09-04 2011-03-10 Heliovolt Corporation Cadmium-free thin film for use in solar cells
US8021641B2 (en) 2010-02-04 2011-09-20 Alliance For Sustainable Energy, Llc Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
US9142408B2 (en) 2010-08-16 2015-09-22 Alliance For Sustainable Energy, Llc Liquid precursor for deposition of indium selenide and method of preparing the same
JP2013153118A (en) * 2011-03-09 2013-08-08 Kobe Steel Ltd Oxide for semiconductor layer of thin-film transistor, semiconductor layer of thin-film transistor having the same, and thin-film transistor
JP5476636B2 (en) * 2011-05-23 2014-04-23 Jx日鉱日石金属株式会社 Sputtering target manufacturing method and sputtering target
DE112012007295B3 (en) 2011-06-08 2022-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a sputtering target and method of manufacturing a semiconductor device
JP2012031521A (en) * 2011-09-12 2012-02-16 Idemitsu Kosan Co Ltd Sputtering target and transparent conductive film
US8665511B2 (en) 2011-12-27 2014-03-04 Intermolecular, Inc. Electrochromic device with improved transparent conductor and method for forming the same
TWI555867B (en) * 2012-05-31 2016-11-01 Idemitsu Kosan Co Sputtering target
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
US20130341180A1 (en) * 2012-06-22 2013-12-26 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for using the same
TW201341563A (en) * 2012-07-10 2013-10-16 Solar Applied Mat Tech Corp Sputtering target and metal oxide film
KR20140011945A (en) * 2012-07-19 2014-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Sputtering target, method for using the same, and method for forming oxide film
US9885108B2 (en) 2012-08-07 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming sputtering target
JP6311912B2 (en) 2012-10-17 2018-04-18 三菱マテリアル株式会社 Cu-Ga binary sputtering target and method for producing the same
JP5947697B2 (en) * 2012-10-19 2016-07-06 出光興産株式会社 Sputtering target
JP2014167162A (en) * 2013-01-31 2014-09-11 Nitto Denko Corp Method for producing infrared reflection film
JP6141777B2 (en) 2013-02-28 2017-06-07 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP6365922B2 (en) * 2013-04-15 2018-08-01 三菱マテリアル株式会社 Sputtering target and manufacturing method thereof
JP5702447B2 (en) * 2013-08-29 2015-04-15 出光興産株式会社 Semiconductor thin film, manufacturing method thereof, and thin film transistor
JP6194826B2 (en) * 2014-03-19 2017-09-13 ソニー株式会社 Lithium ion secondary battery
JP6211557B2 (en) 2014-04-30 2017-10-11 日東電工株式会社 Transparent conductive film and method for producing the same
JP6125689B1 (en) 2016-03-31 2017-05-10 Jx金属株式会社 Indium oxide-zinc oxide (IZO) sputtering target
JP6078189B1 (en) * 2016-03-31 2017-02-08 Jx金属株式会社 IZO sintered compact sputtering target and manufacturing method thereof
JP6668455B2 (en) 2016-04-01 2020-03-18 株式会社半導体エネルギー研究所 Method for manufacturing oxide semiconductor film
JP6267297B1 (en) * 2016-08-29 2018-01-24 Jx金属株式会社 Sintered body, sputtering target and manufacturing method thereof
JP6159867B1 (en) * 2016-12-22 2017-07-05 Jx金属株式会社 Transparent conductive film forming target, transparent conductive film forming target manufacturing method, and transparent conductive film manufacturing method
JP7075934B2 (en) * 2017-08-01 2022-05-26 出光興産株式会社 Sputtering targets, oxide semiconductor thin films, thin film transistors and electrical equipment
JP6523510B1 (en) * 2018-03-30 2019-06-05 Jx金属株式会社 Sputtering target
CN109503147B (en) * 2018-12-14 2021-09-10 昆明理工大学 Ga element doped In2O3(ZnO)3Thermoelectric material and preparation method and application thereof
JP7412926B2 (en) * 2019-08-30 2024-01-15 芝浦メカトロニクス株式会社 Film deposition equipment, film deposition work manufacturing method
KR20210053373A (en) * 2019-11-01 2021-05-12 삼성디스플레이 주식회사 Method of manufacturing photo sensor
CN113788669A (en) * 2021-10-20 2021-12-14 南宁西桂微电子有限公司 Preparation method of ITO sputtering target material
CN115418618A (en) * 2022-09-09 2022-12-02 长沙壹纳光电材料有限公司 Indium tin zinc oxide target material, oxide film and preparation method thereof

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0350148A (en) 1989-07-19 1991-03-04 Tosoh Corp Zinc oxide sintered compact, production and its application
JPH05155651A (en) 1990-12-14 1993-06-22 Hitachi Metals Ltd Production of indium oxide-base sintered body and of oxide sintered body
JPH0570943A (en) 1991-09-11 1993-03-23 Mitsubishi Materials Corp High density sintered target material for forming electric conductive transparent thin film by sputtering
JP2596287B2 (en) * 1992-07-16 1997-04-02 東洋紡績株式会社 Heat-shrinkable polyester film
JP2695605B2 (en) 1992-12-15 1998-01-14 出光興産株式会社 Target and manufacturing method thereof
CA2150724A1 (en) * 1992-12-15 1994-06-23 Akira Kaijou Transparent electrically conductive layer, electrically conductive transparent substrate and electrically conductive material
JPH06318406A (en) 1992-12-16 1994-11-15 Idemitsu Kosan Co Ltd Conductive transparent base member and manufacture thereof
JPH06247765A (en) * 1993-02-23 1994-09-06 Toshiba Corp Ito sintered compact, ito target and ito film
JP3179287B2 (en) * 1993-12-28 2001-06-25 出光興産株式会社 Conductive transparent substrate and method for producing the same
JPH07243036A (en) 1994-03-07 1995-09-19 Japan Energy Corp Ito sputtering target
JPH07333438A (en) * 1994-06-14 1995-12-22 Idemitsu Kosan Co Ltd Conductive polarizing plate and its production
JPH07335046A (en) * 1994-06-14 1995-12-22 Idemitsu Kosan Co Ltd Manufacture of conductive transparent substrate
JPH08144056A (en) * 1994-11-22 1996-06-04 Mitsubishi Materials Corp Production of sputtering target material for forming thin ito film having high strength
JPH08283934A (en) 1995-04-12 1996-10-29 Kobe Steel Ltd Ito sputtering target and its production
JPH095514A (en) * 1995-04-20 1997-01-10 Idemitsu Kosan Co Ltd Color filter for liquid crystal display
JP3746094B2 (en) 1995-06-28 2006-02-15 出光興産株式会社 Target and manufacturing method thereof
JP3943612B2 (en) * 1995-09-26 2007-07-11 出光興産株式会社 Conductive transparent substrate and method for producing the same
JPH10147862A (en) * 1996-11-15 1998-06-02 Sumitomo Metal Mining Co Ltd Indium oxide-tin oxide sintered body
JP3571171B2 (en) * 1997-05-08 2004-09-29 出光興産株式会社 Organic electroluminescence device
JPH11302836A (en) * 1998-04-21 1999-11-02 Sumitomo Metal Mining Co Ltd Zinc oxide-base sintered compact
JP2000072526A (en) * 1998-09-04 2000-03-07 Idemitsu Kosan Co Ltd Target for transparent conductive coat, transparent conductive glass, and transparent conductive film
JP4233641B2 (en) * 1998-08-31 2009-03-04 出光興産株式会社 Target for transparent conductive film, transparent conductive glass and transparent conductive film
EP2610230A2 (en) * 1998-08-31 2013-07-03 Idemitsu Kosan Co., Ltd. Target for transparent electroconductive film, transparent electroconductive material, transparent electroconductive glass, and transparent electroconductive film
CN1195886C (en) * 1999-11-25 2005-04-06 出光兴产株式会社 Sputtering target, transparent conductive oxide and method for producing the sputtering target
JP3961172B2 (en) * 1999-11-26 2007-08-22 アルプス電気株式会社 Oxide transparent conductive film, oxide transparent conductive film forming target, substrate manufacturing method, electronic apparatus, and liquid crystal display device provided with previous oxide transparent conductive film

Also Published As

Publication number Publication date
JP4850378B2 (en) 2012-01-11
EP1233082A1 (en) 2002-08-21
EP1777321A1 (en) 2007-04-25
CN1195886C (en) 2005-04-06
EP1752430A1 (en) 2007-02-14
EP1233082B1 (en) 2009-01-07
EP1233082A4 (en) 2006-01-25
KR100849258B1 (en) 2008-07-29
DE60042431D1 (en) 2009-07-30
JP5558420B2 (en) 2014-07-23
JP2011190542A (en) 2011-09-29
JP5306308B2 (en) 2013-10-02
EP1752430B1 (en) 2009-06-17
JP2011068993A (en) 2011-04-07
WO2001038599A1 (en) 2001-05-31
KR100774778B1 (en) 2007-11-07
KR20070089755A (en) 2007-08-31
CN1379827A (en) 2002-11-13
KR101139203B1 (en) 2012-04-26
KR20020069190A (en) 2002-08-29
US6669830B1 (en) 2003-12-30
HK1050720A1 (en) 2003-07-04
KR20080035025A (en) 2008-04-22

Similar Documents

Publication Publication Date Title
DE60041353D1 (en) SPUTTERTARGET, TRANSPARENT CONDUCTIVE OXID AND PREPARATION PROCESS FOR SPUTTERTARGET
LU92057I2 (en) Vandetanib (CAPRELSA)
DE60026352D1 (en) Biosensor
HK1054816A1 (en) Solution processing
ID26007A (en) CARBONILATION PROCESS
EP1182450A4 (en) Biosensor
AU2002348223A8 (en) Healthcare networks with biosensors
GB9903472D0 (en) Chemical process
DE69918627D1 (en) Flat processing
DE60031251D1 (en) CELLS MESSAGE ELIMINATION
ATE246270T1 (en) RHODIUM ELECTROCATALYST AND PRODUCTION PROCESS THEREOF
DE60017012D1 (en) Orginalitätsverschluss and production process
GB0009915D0 (en) Solution processing
ID23316A (en) CARBONILATION PROCESS
HUP0201133A3 (en) Electrode structure
DE60011330D1 (en) electrode
ID29177A (en) UREA MAKING PROCESS
DE60042276D1 (en) LOW PLATING PROCESS
DE69914430D1 (en) Solid electrolyte and manufacturing process
DE60013868D1 (en) CONDUCTIVE COMPOSITION
ID26783A (en) PRODUCTION PROCESS R - (+) - 6-CARBOXAMOID-3-N-METHYLAMINO-1,2,3,4-TETRAHIDROKARBAZOL
DE60037217D1 (en) Cap for connectors
ID28656A (en) PROCESS FOR RAISING THE NOBLE METAL CATALYST USED
FI980440A (en) Production Cell
GB9914600D0 (en) Novel,process

Legal Events

Date Code Title Description
8364 No opposition during term of opposition