DE60041188D1 - HERSTELLUNG INTEGRIERTER Ta UND TaNx FILME MITTELS CVD AUS TANTALUMHALOGENID-VORLÄUFERN - Google Patents

HERSTELLUNG INTEGRIERTER Ta UND TaNx FILME MITTELS CVD AUS TANTALUMHALOGENID-VORLÄUFERN

Info

Publication number
DE60041188D1
DE60041188D1 DE60041188T DE60041188T DE60041188D1 DE 60041188 D1 DE60041188 D1 DE 60041188D1 DE 60041188 T DE60041188 T DE 60041188T DE 60041188 T DE60041188 T DE 60041188T DE 60041188 D1 DE60041188 D1 DE 60041188D1
Authority
DE
Germany
Prior art keywords
halogenide
tantalum
precursors
cvd
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60041188T
Other languages
English (en)
Inventor
John J Hautala
Johannes F Westendorp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE60041188D1 publication Critical patent/DE60041188D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
DE60041188T 1999-04-27 2000-04-25 HERSTELLUNG INTEGRIERTER Ta UND TaNx FILME MITTELS CVD AUS TANTALUMHALOGENID-VORLÄUFERN Expired - Fee Related DE60041188D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/300,632 US6410432B1 (en) 1999-04-27 1999-04-27 CVD of integrated Ta and TaNx films from tantalum halide precursors
PCT/US2000/011110 WO2000065122A1 (en) 1999-04-27 2000-04-25 CVD OF INTEGRATED Ta AND TaNx FILMS FROM TANTALUM HALIDE PRECURSORS

Publications (1)

Publication Number Publication Date
DE60041188D1 true DE60041188D1 (de) 2009-02-05

Family

ID=23159931

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60041188T Expired - Fee Related DE60041188D1 (de) 1999-04-27 2000-04-25 HERSTELLUNG INTEGRIERTER Ta UND TaNx FILME MITTELS CVD AUS TANTALUMHALOGENID-VORLÄUFERN

Country Status (8)

Country Link
US (1) US6410432B1 (de)
EP (1) EP1192293B1 (de)
JP (1) JP2002543281A (de)
KR (1) KR100668892B1 (de)
CN (1) CN1150348C (de)
DE (1) DE60041188D1 (de)
TW (1) TW484180B (de)
WO (1) WO2000065122A1 (de)

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US6630201B2 (en) * 2001-04-05 2003-10-07 Angstron Systems, Inc. Adsorption process for atomic layer deposition
US20030091739A1 (en) * 2001-11-14 2003-05-15 Hitoshi Sakamoto Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
US20040036129A1 (en) * 2002-08-22 2004-02-26 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
US6967154B2 (en) * 2002-08-26 2005-11-22 Micron Technology, Inc. Enhanced atomic layer deposition
FR2847593A1 (fr) * 2002-11-26 2004-05-28 St Microelectronics Sa Procede et dispositif de realisation d'une couche de pentoxyde de tantale sur un materiau porteur, en particulier du niture de titane, et circuit integre incorporant une couche de pentoxyde de tantale
WO2004105095A2 (en) * 2003-05-16 2004-12-02 Svt Associates Inc. Thin-film deposition evaporator
US20050000428A1 (en) * 2003-05-16 2005-01-06 Shero Eric J. Method and apparatus for vaporizing and delivering reactant
JP4931173B2 (ja) * 2005-03-03 2012-05-16 株式会社アルバック タンタル窒化物膜の形成方法
JP4931174B2 (ja) * 2005-03-03 2012-05-16 株式会社アルバック タンタル窒化物膜の形成方法
US7473637B2 (en) 2005-07-20 2009-01-06 Micron Technology, Inc. ALD formed titanium nitride films
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
US20090304924A1 (en) * 2006-03-03 2009-12-10 Prasad Gadgil Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films
US7719029B2 (en) * 2007-05-17 2010-05-18 Princeton Lightwave, Inc. Negative feedback avalanche diode
US8568529B2 (en) * 2009-04-10 2013-10-29 Applied Materials, Inc. HVPE chamber hardware
US20100267191A1 (en) * 2009-04-20 2010-10-21 Applied Materials, Inc. Plasma enhanced thermal evaporator
JP5436097B2 (ja) 2009-08-25 2014-03-05 三菱電機株式会社 集光光学系及び投写型画像表示装置
US9117773B2 (en) * 2009-08-26 2015-08-25 Asm America, Inc. High concentration water pulses for atomic layer deposition
CN101962746B (zh) * 2010-10-08 2012-09-12 中国航空工业集团公司北京航空制造工程研究所 金属零件表面制备高附着力Ta和TaN叠层薄膜的方法
CN103088310A (zh) * 2013-01-10 2013-05-08 青岛高泰新材料有限公司 以三维网状石墨泡沫或网状玻璃碳制作医用多孔钽的方法
CN106086809B (zh) * 2016-06-17 2018-08-17 艾因斯（北京）钽应用科技有限公司 一种制备耐腐耐磨钽复合涂层的方法
KR102344996B1 (ko) * 2017-08-18 2021-12-30 삼성전자주식회사 전구체 공급 유닛, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법
CN109609925A (zh) * 2019-02-21 2019-04-12 苏州鑫沣电子科技有限公司 一种化学气相沉积高纯钽溅射靶材制作方法
CN111151768B (zh) * 2019-04-10 2022-07-29 深圳乐钽医疗器材有限公司 一种增材制造用超高纯球形钽粉的制备方法
CN111663112B (zh) * 2020-05-15 2021-03-05 北京市春立正达医疗器械股份有限公司 一种通过化学气相沉积法制备的医用钽金属骨小梁材料及其制备方法

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Also Published As

Publication number Publication date
KR100668892B1 (ko) 2007-01-12
EP1192293B1 (de) 2008-12-24
TW484180B (en) 2002-04-21
EP1192293A1 (de) 2002-04-03
CN1354807A (zh) 2002-06-19
CN1150348C (zh) 2004-05-19
US6410432B1 (en) 2002-06-25
WO2000065122A1 (en) 2000-11-02
KR20020010617A (ko) 2002-02-04
JP2002543281A (ja) 2002-12-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee