DE60039746D1 - Reflexionsmaske für die photolithographie und verfahren zu deren herstellung - Google Patents

Reflexionsmaske für die photolithographie und verfahren zu deren herstellung

Info

Publication number
DE60039746D1
DE60039746D1 DE60039746T DE60039746T DE60039746D1 DE 60039746 D1 DE60039746 D1 DE 60039746D1 DE 60039746 T DE60039746 T DE 60039746T DE 60039746 T DE60039746 T DE 60039746T DE 60039746 D1 DE60039746 D1 DE 60039746D1
Authority
DE
Germany
Prior art keywords
photolithography
production
reflection mask
mask
reflection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60039746T
Other languages
English (en)
Inventor
Jean-Yves Robic
Bernard Aspar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE60039746D1 publication Critical patent/DE60039746D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE60039746T 1999-07-29 2000-07-28 Reflexionsmaske für die photolithographie und verfahren zu deren herstellung Expired - Lifetime DE60039746D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9909842A FR2797060B1 (fr) 1999-07-29 1999-07-29 Structure pour masque de lithographie en reflexion et procede pour sa realisation
PCT/FR2000/002176 WO2001009680A1 (fr) 1999-07-29 2000-07-28 Structure pour masque de lithographie en reflexion et procede pour sa realisation

Publications (1)

Publication Number Publication Date
DE60039746D1 true DE60039746D1 (de) 2008-09-18

Family

ID=9548655

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60039746T Expired - Lifetime DE60039746D1 (de) 1999-07-29 2000-07-28 Reflexionsmaske für die photolithographie und verfahren zu deren herstellung

Country Status (6)

Country Link
US (1) US6593036B1 (de)
EP (1) EP1121622B1 (de)
JP (1) JP4868675B2 (de)
DE (1) DE60039746D1 (de)
FR (1) FR2797060B1 (de)
WO (1) WO2001009680A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6319635B1 (en) * 1999-12-06 2001-11-20 The Regents Of The University Of California Mitigation of substrate defects in reticles using multilayer buffer layers
US6593041B2 (en) * 2001-07-31 2003-07-15 Intel Corporation Damascene extreme ultraviolet lithography (EUVL) photomask and method of making
US20040137828A1 (en) * 2002-07-17 2004-07-15 Hoya Corporation Glass substrate for a mask blank, method of producing a glass substrate for a mask blank, mask blank, method of producing the mask blank, transfer mask, and method of producing a transfer mask
JP3647834B2 (ja) * 2002-09-25 2005-05-18 松下電器産業株式会社 露光装置用のミラー、露光装置用の反射型マスク、露光装置及びパターン形成方法
US7927975B2 (en) 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
US8399868B2 (en) * 2011-02-15 2013-03-19 Sematech Inc. Tools, methods and devices for mitigating extreme ultraviolet optics contamination
FR2994605B1 (fr) * 2012-08-20 2014-08-22 Commissariat Energie Atomique Procede de fabrication de masques euv minimisant l'impact des defauts de substrat
FR3002655B1 (fr) * 2013-02-28 2016-05-13 Commissariat Energie Atomique Procede de photolithographie a double masque minimisant l'impact des defauts de substrat
CH716603A1 (fr) 2019-09-16 2021-03-31 Sigatec Sa Procédé de fabrication de spiraux horlogers.

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0666251B2 (ja) * 1987-03-26 1994-08-24 日本電信電話株式会社 Ｘ線マスクおよびその製造方法
JP3153230B2 (ja) * 1990-09-10 2001-04-03 株式会社日立製作所 パタン形成方法
JPH05134385A (ja) * 1991-11-11 1993-05-28 Nikon Corp 反射マスク
JP3412898B2 (ja) * 1994-03-02 2003-06-03 キヤノン株式会社 反射型マスクの作製方法と作製装置、これによる反射型マスクを用いた露光装置とデバイス製造方法
US6015640A (en) * 1998-03-26 2000-01-18 Euv Llc Mask fabrication process
JPH11354404A (ja) * 1998-06-05 1999-12-24 Hitachi Ltd ブランクスおよび反射型マスクの検査方法および検査装置
US6150060A (en) * 1999-01-11 2000-11-21 The Regents Of The University Of California Defect tolerant transmission lithography mask
JP4959080B2 (ja) * 1999-06-07 2012-06-20 エクストリーム、ウルトラバイオレット、リミテッド、ライアビリティ、カンパニー 反射マスク基板のコーティング
US6410193B1 (en) * 1999-12-30 2002-06-25 Intel Corporation Method and apparatus for a reflective mask that is inspected at a first wavelength and exposed during semiconductor manufacturing at a second wavelength

Also Published As

Publication number Publication date
JP2003506880A (ja) 2003-02-18
EP1121622A1 (de) 2001-08-08
FR2797060A1 (fr) 2001-02-02
FR2797060B1 (fr) 2001-09-14
WO2001009680A1 (fr) 2001-02-08
US6593036B1 (en) 2003-07-15
JP4868675B2 (ja) 2012-02-01
EP1121622B1 (de) 2008-08-06

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DE60039746D1 (de) Reflexionsmaske für die photolithographie und verfahren zu deren herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition