DE60020163D1 - Fotomaske, verfahren zu ihrer herstellung - Google Patents
Fotomaske, verfahren zu ihrer herstellungInfo
- Publication number
- DE60020163D1 DE60020163D1 DE60020163T DE60020163T DE60020163D1 DE 60020163 D1 DE60020163 D1 DE 60020163D1 DE 60020163 T DE60020163 T DE 60020163T DE 60020163 T DE60020163 T DE 60020163T DE 60020163 D1 DE60020163 D1 DE 60020163D1
- Authority
- DE
- Germany
- Prior art keywords
- photomask
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31675299 | 1999-11-08 | ||
JP31675299 | 1999-11-08 | ||
PCT/JP2000/007772 WO2001035166A1 (en) | 1999-11-08 | 2000-11-02 | Photomask, method of producing photomask, and method of making pattern using photomask |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60020163D1 true DE60020163D1 (de) | 2005-06-16 |
DE60020163T2 DE60020163T2 (de) | 2005-10-20 |
Family
ID=18080534
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60020163T Expired - Lifetime DE60020163T2 (de) | 1999-11-08 | 2000-11-02 | Fotomaske, verfahren zu ihrer herstellung |
Country Status (8)
Country | Link |
---|---|
US (4) | US6703168B1 (de) |
EP (3) | EP1241523B1 (de) |
JP (1) | JP3708875B2 (de) |
KR (2) | KR100553069B1 (de) |
CN (2) | CN1209683C (de) |
DE (1) | DE60020163T2 (de) |
TW (1) | TW466584B (de) |
WO (1) | WO2001035166A1 (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8204082B2 (en) * | 2000-06-23 | 2012-06-19 | Cloudshield Technologies, Inc. | Transparent provisioning of services over a network |
JP3708877B2 (ja) | 2001-05-01 | 2005-10-19 | 松下電器産業株式会社 | フォトマスク |
KR100568403B1 (ko) * | 2001-12-26 | 2006-04-05 | 마츠시타 덴끼 산교 가부시키가이샤 | 포토마스크 및 마스크 데이터 작성방법 |
US6944844B2 (en) * | 2002-04-03 | 2005-09-13 | Synopsys, Inc. | System and method to determine impact of line end shortening |
KR100468741B1 (ko) * | 2002-06-22 | 2005-01-29 | 삼성전자주식회사 | 노광 장치의 어퍼처 설계를 위한 시뮬레이션 방법 및장치, 그리고 시뮬레이션 방법을 기록한 기록매체 |
KR100604814B1 (ko) * | 2002-11-11 | 2006-07-28 | 삼성전자주식회사 | 위상 에지 위상 반전 마스크 및 그 제조방법 |
US7147975B2 (en) | 2003-02-17 | 2006-12-12 | Matsushita Electric Industrial Co., Ltd. | Photomask |
US7842436B2 (en) * | 2003-10-23 | 2010-11-30 | Panasonic Corporation | Photomask |
JP4479486B2 (ja) * | 2004-11-30 | 2010-06-09 | ソニー株式会社 | マスクパターンの補正方法 |
JP4574343B2 (ja) * | 2004-12-15 | 2010-11-04 | 三星電子株式会社 | 位相シフトマスク及びパターン形成方法 |
JP4728676B2 (ja) * | 2005-03-30 | 2011-07-20 | 富士通セミコンダクター株式会社 | フォトマスクの製造方法、及びそのフォトマスクを用いた半導体装置の製造方法 |
JP4791198B2 (ja) | 2006-02-03 | 2011-10-12 | パナソニック株式会社 | フォトマスク、そのフォトマスクを用いたパターン形成方法及びマスクデータ作成方法 |
KR20080107242A (ko) * | 2006-03-06 | 2008-12-10 | 파나소닉 주식회사 | 포토마스크, 그 작성방법, 그 포토마스크를 이용한패턴형성방법 및 마스크데이터 작성방법 |
KR20080104224A (ko) * | 2006-03-09 | 2008-12-02 | 파나소닉 주식회사 | 포토마스크, 그 작성방법 및 그 포토마스크를 이용한패턴형성방법 |
KR100811270B1 (ko) * | 2006-09-19 | 2008-03-07 | 주식회사 하이닉스반도체 | 단일 포토마스크를 이용한 패턴 형성방법 |
JP2008083189A (ja) * | 2006-09-26 | 2008-04-10 | Matsushita Electric Ind Co Ltd | 位相シフトマスクおよび集光素子の製造方法 |
US7636904B2 (en) * | 2006-10-20 | 2009-12-22 | Synopsys, Inc. | Locating critical dimension(s) of a layout feature in an IC design by modeling simulated intensities |
US7838173B2 (en) * | 2006-12-01 | 2010-11-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure design and fabrication on photomask for contact hole manufacturing process window enhancement |
KR100945919B1 (ko) * | 2007-02-21 | 2010-03-05 | 주식회사 하이닉스반도체 | 반도체 소자의 포토마스크 형성방법 |
JP2009053575A (ja) * | 2007-08-29 | 2009-03-12 | Panasonic Corp | フォトマスク及びそれを用いたパターン形成方法 |
US20090063448A1 (en) * | 2007-08-29 | 2009-03-05 | Microsoft Corporation | Aggregated Search Results for Local and Remote Services |
JP2009058877A (ja) | 2007-09-03 | 2009-03-19 | Panasonic Corp | フォトマスク及びそれを用いたパターン形成方法 |
JP2009075207A (ja) * | 2007-09-19 | 2009-04-09 | Panasonic Corp | フォトマスク及びそれを用いたパターン形成方法 |
JP4968011B2 (ja) * | 2007-11-19 | 2012-07-04 | セイコーエプソン株式会社 | 半導体装置 |
EP2391924B1 (de) | 2009-01-29 | 2013-07-24 | Digiflex Ltd. | Verfahren zur herstellung einer fotomaske auf einer fotopolymeroberfläche |
CN102566291B (zh) * | 2010-12-29 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | 投影掩膜版的测试系统 |
JP5605917B2 (ja) * | 2011-12-27 | 2014-10-15 | Hoya株式会社 | フォトマスクの製造方法、パターン転写方法及びフラットパネルディスプレイの製造方法 |
US8499263B1 (en) * | 2012-03-29 | 2013-07-30 | Mentor Graphics Corporation | Encrypted profiles for parasitic extraction |
JP6093117B2 (ja) * | 2012-06-01 | 2017-03-08 | Hoya株式会社 | フォトマスク、フォトマスクの製造方法及びパターンの転写方法 |
KR20150028109A (ko) * | 2013-09-05 | 2015-03-13 | 삼성디스플레이 주식회사 | 노광용 마스크, 이의 제조방법 및 이를 이용한 표시패널의 제조방법 |
TWI821625B (zh) * | 2018-10-22 | 2023-11-11 | 日商Hoya股份有限公司 | 光罩、光罩之製造方法及電子元件之製造方法 |
CN110308615A (zh) * | 2019-05-27 | 2019-10-08 | 武汉华星光电半导体显示技术有限公司 | 光罩结构 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0401795A3 (de) * | 1989-06-08 | 1991-03-27 | Oki Electric Industry Company, Limited | Phasenverschiebungs-Photomaske für negative Lacke und Verfahren zur Herstellung von isolierten negativen Resistbildern mit dieser Phasenverschiebungsmaske |
JPH0311345A (ja) * | 1989-06-08 | 1991-01-18 | Oki Electric Ind Co Ltd | ホトマスク及びこれを用いたパターン形成方法 |
JPH03177841A (ja) | 1989-12-06 | 1991-08-01 | Oki Electric Ind Co Ltd | ネガ型レジスト用ホトマスク |
JPH05142751A (ja) | 1991-11-18 | 1993-06-11 | Nec Corp | フオトマスクおよび投影露光方法 |
US5354632A (en) * | 1992-04-15 | 1994-10-11 | Intel Corporation | Lithography using a phase-shifting reticle with reduced transmittance |
JPH05333524A (ja) | 1992-06-04 | 1993-12-17 | Nec Corp | 位相シフトマスクおよびその製造方法 |
JP3322284B2 (ja) | 1993-08-31 | 2002-09-09 | 凸版印刷株式会社 | 位相シフトマスク及びその製造方法 |
JP3290862B2 (ja) * | 1994-09-29 | 2002-06-10 | 株式会社東芝 | フォトマスクとこのフォトマスクを用いた露光方法及びこのフォトマスクの製造方法 |
GB2314635B (en) * | 1995-04-21 | 1999-04-21 | Mine Safety Appliances Co | Electrochemical gas sensor for the detection of nitrogen dioxide |
JPH0934099A (ja) | 1995-07-25 | 1997-02-07 | Hoya Corp | 位相シフトマスク及びその製造方法 |
US5718829A (en) * | 1995-09-01 | 1998-02-17 | Micron Technology, Inc. | Phase shift structure and method of fabrication |
KR0179164B1 (ko) * | 1995-09-25 | 1999-04-01 | 문정환 | 위상 반전 마스크의 제조방법 |
JP2917879B2 (ja) | 1995-10-31 | 1999-07-12 | 日本電気株式会社 | フォトマスク及びその製造方法 |
JPH09127676A (ja) | 1995-11-06 | 1997-05-16 | Seiko Epson Corp | ホトマスク及び半導体装置の製造方法 |
JPH09329888A (ja) | 1996-06-12 | 1997-12-22 | Oki Electric Ind Co Ltd | 位相シフトマスクパターン |
KR980010610A (ko) * | 1996-07-31 | 1998-04-30 | 문정환 | 위상반전마스크의 구조 및 제조방법 |
US5908718A (en) * | 1997-03-31 | 1999-06-01 | Nec Corporation | Phase shifting photomask with two different transparent regions |
JP3070520B2 (ja) | 1997-05-26 | 2000-07-31 | 日本電気株式会社 | フォトマスク及び露光方法 |
US6106979A (en) * | 1997-12-30 | 2000-08-22 | Micron Technology, Inc. | Use of attenuating phase-shifting mask for improved printability of clear-field patterns |
US6083275A (en) * | 1998-01-09 | 2000-07-04 | International Business Machines Corporation | Optimized phase shift design migration |
JP3466488B2 (ja) | 1998-09-29 | 2003-11-10 | シャープ株式会社 | フォトマスク |
US6044007A (en) * | 1999-03-24 | 2000-03-28 | Advanced Micro Devices, Inc. | Modification of mask layout data to improve writeability of OPC |
-
2000
- 2000-11-02 DE DE60020163T patent/DE60020163T2/de not_active Expired - Lifetime
- 2000-11-02 CN CNB008125996A patent/CN1209683C/zh not_active Expired - Fee Related
- 2000-11-02 CN CN200510003896XA patent/CN1661480A/zh active Pending
- 2000-11-02 KR KR1020027005919A patent/KR100553069B1/ko not_active IP Right Cessation
- 2000-11-02 EP EP00971788A patent/EP1241523B1/de not_active Expired - Lifetime
- 2000-11-02 KR KR1020037010482A patent/KR100553070B1/ko not_active IP Right Cessation
- 2000-11-02 EP EP05003679A patent/EP1542072A3/de not_active Withdrawn
- 2000-11-02 JP JP2001536639A patent/JP3708875B2/ja not_active Expired - Lifetime
- 2000-11-02 WO PCT/JP2000/007772 patent/WO2001035166A1/ja active IP Right Grant
- 2000-11-02 EP EP05003695A patent/EP1542073A3/de not_active Withdrawn
- 2000-11-02 US US09/869,848 patent/US6703168B1/en not_active Expired - Fee Related
- 2000-11-07 TW TW089123500A patent/TW466584B/zh not_active IP Right Cessation
-
2003
- 2003-10-21 US US10/688,960 patent/US7001711B2/en not_active Expired - Fee Related
-
2005
- 2005-12-22 US US11/314,019 patent/US7205077B2/en not_active Expired - Fee Related
-
2007
- 2007-03-12 US US11/716,637 patent/US7468240B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7205077B2 (en) | 2007-04-17 |
DE60020163T2 (de) | 2005-10-20 |
EP1241523A4 (de) | 2003-01-07 |
US7468240B2 (en) | 2008-12-23 |
EP1542072A2 (de) | 2005-06-15 |
EP1241523A1 (de) | 2002-09-18 |
KR20030008211A (ko) | 2003-01-24 |
US20060121367A1 (en) | 2006-06-08 |
KR100553069B1 (ko) | 2006-02-15 |
EP1542073A2 (de) | 2005-06-15 |
WO2001035166A1 (en) | 2001-05-17 |
EP1542072A3 (de) | 2009-02-18 |
EP1542073A3 (de) | 2009-02-18 |
KR100553070B1 (ko) | 2006-02-15 |
US6703168B1 (en) | 2004-03-09 |
US7001711B2 (en) | 2006-02-21 |
CN1209683C (zh) | 2005-07-06 |
EP1241523B1 (de) | 2005-05-11 |
US20070224542A1 (en) | 2007-09-27 |
CN1661480A (zh) | 2005-08-31 |
TW466584B (en) | 2001-12-01 |
JP3708875B2 (ja) | 2005-10-19 |
CN1373861A (zh) | 2002-10-09 |
US20040081899A1 (en) | 2004-04-29 |
KR20030075184A (ko) | 2003-09-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PANASONIC CORP., KADOMA, OSAKA, JP |