DE60037248D1 - Laterale DMOS-Transistoranordnung - Google Patents
Laterale DMOS-TransistoranordnungInfo
- Publication number
- DE60037248D1 DE60037248D1 DE60037248T DE60037248T DE60037248D1 DE 60037248 D1 DE60037248 D1 DE 60037248D1 DE 60037248 T DE60037248 T DE 60037248T DE 60037248 T DE60037248 T DE 60037248T DE 60037248 D1 DE60037248 D1 DE 60037248D1
- Authority
- DE
- Germany
- Prior art keywords
- transistor arrangement
- dmos transistor
- lateral dmos
- lateral
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP00830628A EP1191601B1 (de) | 2000-09-21 | 2000-09-21 | Laterale DMOS-Transistoranordnung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60037248D1 true DE60037248D1 (de) | 2008-01-10 |
| DE60037248T2 DE60037248T2 (de) | 2008-10-09 |
Family
ID=8175486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60037248T Expired - Lifetime DE60037248T2 (de) | 2000-09-21 | 2000-09-21 | Laterale DMOS-Transistoranordnung |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6624471B2 (de) |
| EP (1) | EP1191601B1 (de) |
| DE (1) | DE60037248T2 (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7602019B2 (en) * | 2006-04-20 | 2009-10-13 | Texas Instruments Incorporated | Drive circuit and drain extended transistor for use therein |
| DE102006033692B4 (de) * | 2006-07-20 | 2011-01-05 | Austriamicrosystems Ag | Verfahren zur Herstellung eines strukturierten Dielektrikums für einen LDMOS-Transistor |
| DE102011087845B4 (de) * | 2011-12-06 | 2015-07-02 | Infineon Technologies Ag | Laterales transistorbauelement und verfahren zu dessen herstellung |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2457605A2 (fr) * | 1979-05-21 | 1980-12-19 | France Etat | Perfectionnements aux portes logiques a transistors mos multidrains |
| FR2477778A1 (fr) * | 1980-03-04 | 1981-09-11 | Thomson Csf | Structure de transistor a effet de champ a grille isolee et application a une realisation de portes logiques |
| EP0267768A1 (de) * | 1986-11-10 | 1988-05-18 | SILICONIX Incorporated | Drifted-Drain-MOS-Transistor für hohe Spannungen |
| FR2618943B1 (fr) * | 1987-07-31 | 1989-12-01 | Thomson Hybrides Microondes | Dispositif semi-conducteur a effet de champ comportant une electrode annexe |
| JP3346193B2 (ja) * | 1996-11-18 | 2002-11-18 | 松下電器産業株式会社 | 電力増幅器 |
| US6303961B1 (en) * | 1998-04-29 | 2001-10-16 | Aqere Systems Guardian Corp. | Complementary semiconductor devices |
-
2000
- 2000-09-21 EP EP00830628A patent/EP1191601B1/de not_active Expired - Lifetime
- 2000-09-21 DE DE60037248T patent/DE60037248T2/de not_active Expired - Lifetime
-
2001
- 2001-09-20 US US09/960,254 patent/US6624471B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1191601A1 (de) | 2002-03-27 |
| DE60037248T2 (de) | 2008-10-09 |
| EP1191601B1 (de) | 2007-11-28 |
| US20020040995A1 (en) | 2002-04-11 |
| US6624471B2 (en) | 2003-09-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |