DE60036463D1 - Bestimmung der Substrattemperatur durch Messung der Dicke einer Kupferoxidschicht - Google Patents

Bestimmung der Substrattemperatur durch Messung der Dicke einer Kupferoxidschicht

Info

Publication number
DE60036463D1
DE60036463D1 DE60036463T DE60036463T DE60036463D1 DE 60036463 D1 DE60036463 D1 DE 60036463D1 DE 60036463 T DE60036463 T DE 60036463T DE 60036463 T DE60036463 T DE 60036463T DE 60036463 D1 DE60036463 D1 DE 60036463D1
Authority
DE
Germany
Prior art keywords
determination
measuring
thickness
oxide layer
substrate temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60036463T
Other languages
English (en)
Inventor
Randhir Thakur
Sing Pin Tay
Yao Zhi Hu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Steag RTP Systems Inc
Original Assignee
Steag RTP Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Steag RTP Systems Inc filed Critical Steag RTP Systems Inc
Application granted granted Critical
Publication of DE60036463D1 publication Critical patent/DE60036463D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K15/00—Testing or calibrating of thermometers
    • G01K15/005—Calibration
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G01N2021/213—Spectrometric ellipsometry

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE60036463T 1999-03-15 2000-03-10 Bestimmung der Substrattemperatur durch Messung der Dicke einer Kupferoxidschicht Expired - Lifetime DE60036463D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/270,475 US6200023B1 (en) 1999-03-15 1999-03-15 Method for determining the temperature in a thermal processing chamber
PCT/IB2000/000264 WO2000055587A1 (en) 1999-03-15 2000-03-10 Method for determining the temperature in a thermal processing chamber

Publications (1)

Publication Number Publication Date
DE60036463D1 true DE60036463D1 (de) 2007-10-31

Family

ID=23031466

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60036463T Expired - Lifetime DE60036463D1 (de) 1999-03-15 2000-03-10 Bestimmung der Substrattemperatur durch Messung der Dicke einer Kupferoxidschicht

Country Status (6)

Country Link
US (1) US6200023B1 (de)
EP (1) EP1163499B1 (de)
JP (1) JP2002539622A (de)
KR (1) KR20020000773A (de)
DE (1) DE60036463D1 (de)
WO (1) WO2000055587A1 (de)

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US5985356A (en) * 1994-10-18 1999-11-16 The Regents Of The University Of California Combinatorial synthesis of novel materials
EP1101085B1 (de) * 1998-07-28 2002-10-09 STEAG RTP Systems GmbH Verfahren und vorrichtung zum kalibrieren von emissivitätsunabhängigen temperaturmessungen
JP4625183B2 (ja) * 1998-11-20 2011-02-02 ステアーグ アール ティ ピー システムズ インコーポレイテッド 半導体ウェハのための急速加熱及び冷却装置
US6580140B1 (en) * 2000-09-18 2003-06-17 International Business Machines Corporation Metal oxide temperature monitor
US6616331B2 (en) * 2000-11-02 2003-09-09 Matsushita Electric Industrial Co., Ltd Method for predicting temperature and test wafer for use in temperature prediction
US6666577B2 (en) * 2000-11-02 2003-12-23 Matsushita Electric Industrial Co., Ltd. Method for predicting temperature, test wafer for use in temperature prediction, and method for evaluating lamp heating system
US7015422B2 (en) * 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
US6970644B2 (en) * 2000-12-21 2005-11-29 Mattson Technology, Inc. Heating configuration for use in thermal processing chambers
US6902622B2 (en) * 2001-04-12 2005-06-07 Mattson Technology, Inc. Systems and methods for epitaxially depositing films on a semiconductor substrate
WO2003003407A1 (en) 2001-06-28 2003-01-09 Greene, Tweed Of Delaware, Inc. Self contained sensing apparatus and system
US6536943B1 (en) * 2001-10-17 2003-03-25 Albemarle Corporation Method and apparatus for testing flammability properties of cellular plastics
US6918312B2 (en) * 2002-05-30 2005-07-19 Kendro Laboratory Products Lp Validation device and method
US7734439B2 (en) 2002-06-24 2010-06-08 Mattson Technology, Inc. System and process for calibrating pyrometers in thermal processing chambers
US7101812B2 (en) * 2002-09-20 2006-09-05 Mattson Technology, Inc. Method of forming and/or modifying a dielectric film on a semiconductor surface
US6835914B2 (en) * 2002-11-05 2004-12-28 Mattson Technology, Inc. Apparatus and method for reducing stray light in substrate processing chambers
US7078247B2 (en) * 2003-06-06 2006-07-18 International Business Machines Corporation Early detection of contact liner integrity by chemical reaction
US7654596B2 (en) 2003-06-27 2010-02-02 Mattson Technology, Inc. Endeffectors for handling semiconductor wafers
JP2005174986A (ja) * 2003-12-08 2005-06-30 Matsushita Electric Ind Co Ltd 急速熱処理装置、その製造方法及び温度調整方法
US7455448B2 (en) * 2004-07-26 2008-11-25 Texas Instruments Incorporated Rapid thermal anneal equipment and method using sichrome film
FR2879216B1 (fr) * 2004-12-13 2007-04-20 D M S Sa Procede de recuit d'une bande d'acier inoxydable
US7275861B2 (en) * 2005-01-31 2007-10-02 Veeco Instruments Inc. Calibration wafer and method of calibrating in situ temperatures
ATE405946T1 (de) * 2005-06-10 2008-09-15 Soitec Silicon On Insulator Kalibrierverfahren für apparaturen zur thermischen behandlung
US8152365B2 (en) 2005-07-05 2012-04-10 Mattson Technology, Inc. Method and system for determining optical properties of semiconductor wafers
US7951616B2 (en) * 2006-03-28 2011-05-31 Lam Research Corporation Process for wafer temperature verification in etch tools
US8206996B2 (en) 2006-03-28 2012-06-26 Lam Research Corporation Etch tool process indicator method and apparatus
US7543981B2 (en) * 2006-06-29 2009-06-09 Mattson Technology, Inc. Methods for determining wafer temperature
JP5223681B2 (ja) * 2006-12-28 2013-06-26 住友電気工業株式会社 流動体の物理量測定方法及び制御方法
JP4916326B2 (ja) * 2007-01-31 2012-04-11 東京エレクトロン株式会社 温度モニタ用基板の検査装置及び検査方法
US20080267257A1 (en) * 2007-04-27 2008-10-30 Sokudo Co., Ltd. Method and System for Detecting Substrate Temperature in a Track Lithography Tool
WO2009001466A1 (ja) 2007-06-28 2008-12-31 Fujitsu Microelectronics Limited 熱処理装置、及び半導体装置の製造方法
US7976216B2 (en) * 2007-12-20 2011-07-12 Mattson Technology, Inc. Determining the temperature of silicon at high temperatures
KR101036900B1 (ko) * 2009-07-06 2011-05-25 (주)한미글로벌건축사사무소 마그네틱 브라켓의 설치구조
TWI628730B (zh) * 2011-11-10 2018-07-01 應用材料股份有限公司 透過雷射繞射測量3d半導體結構之溫度的設備及方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3803336C2 (de) 1988-02-04 1995-08-03 Siemens Ag Verfahren zur Temperaturkontrolle von Temperprozessen in der Halbleitertechnik
US5103182A (en) 1990-04-02 1992-04-07 Texas Instruments Incorporated Electromagnetic wave measurement of conductive layers of a semiconductor wafer during processing in a fabrication chamber
US5265957A (en) * 1992-08-11 1993-11-30 Texas Instruments Incorporated Wireless temperature calibration device and method
US5364187A (en) 1993-03-08 1994-11-15 Micron Semiconductor, Inc. System for repeatable temperature measurement using surface reflectivity
US5994676A (en) * 1996-01-31 1999-11-30 Sgs-Thomson Microelectronics S.A. Method for calibrating the temperature of an epitaxy reactor
US6126744A (en) * 1996-11-18 2000-10-03 Asm America, Inc. Method and system for adjusting semiconductor processing equipment
WO1998057146A1 (fr) * 1997-06-11 1998-12-17 Matsushita Electronics Corporation Procede d'evaluation de couche semi-conductrice, procede de fabrication de dispositif semi-conducteur, et support d'enregistrement
US5841110A (en) * 1997-08-27 1998-11-24 Steag-Ast Gmbh Method and apparatus for improved temperature control in rapid thermal processing (RTP) systems
JPH11251563A (ja) * 1997-12-26 1999-09-17 Canon Inc Ｓｏｉ基板の熱処理方法及び熱処理装置並びにそれを用いたｓｏｉ基板の作製方法
JP3272706B2 (ja) * 1998-12-09 2002-04-08 松下電器産業株式会社 温度測定用サンプルの作成方法
US6403923B1 (en) * 1999-09-03 2002-06-11 Mattson Technology, Inc. System for controlling the temperature of a reflective substrate during rapid heating

Also Published As

Publication number Publication date
US6200023B1 (en) 2001-03-13
EP1163499A1 (de) 2001-12-19
KR20020000773A (ko) 2002-01-05
WO2000055587A1 (en) 2000-09-21
JP2002539622A (ja) 2002-11-19
EP1163499B1 (de) 2007-09-19

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Legal Events

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8332 No legal effect for de