DE112005003278A5 - Elektrische Messung der Dicke einer Halbleiterschicht - Google Patents

Elektrische Messung der Dicke einer Halbleiterschicht Download PDF

Info

Publication number
DE112005003278A5
DE112005003278A5 DE112005003278T DE112005003278T DE112005003278A5 DE 112005003278 A5 DE112005003278 A5 DE 112005003278A5 DE 112005003278 T DE112005003278 T DE 112005003278T DE 112005003278 T DE112005003278 T DE 112005003278T DE 112005003278 A5 DE112005003278 A5 DE 112005003278A5
Authority
DE
Germany
Prior art keywords
thickness
semiconductor layer
electrical measurement
measurement
electrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE112005003278T
Other languages
English (en)
Inventor
Karlheinz Freywald
Giesbert Hoelzer
Siegfried Hering
Uta Kuniss
Appo Van Der Wiel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
X Fab Semiconductor Foundries GmbH
Original Assignee
X Fab Semiconductor Foundries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by X Fab Semiconductor Foundries GmbH filed Critical X Fab Semiconductor Foundries GmbH
Publication of DE112005003278A5 publication Critical patent/DE112005003278A5/de
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/041Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Automation & Control Theory (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE112005003278T 2004-11-16 2005-11-16 Elektrische Messung der Dicke einer Halbleiterschicht Ceased DE112005003278A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102004055181.2 2004-11-16
DE102004055181A DE102004055181B3 (de) 2004-11-16 2004-11-16 Verfahren und Anordnung zur elektrischen Messung der Dicke von Halbleiterschichten
PCT/DE2005/002063 WO2006053543A1 (de) 2004-11-16 2005-11-16 Elektrische messung der dicke einer halbleiterschicht

Publications (1)

Publication Number Publication Date
DE112005003278A5 true DE112005003278A5 (de) 2007-09-27

Family

ID=35764705

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102004055181A Active DE102004055181B3 (de) 2004-11-16 2004-11-16 Verfahren und Anordnung zur elektrischen Messung der Dicke von Halbleiterschichten
DE112005003278T Ceased DE112005003278A5 (de) 2004-11-16 2005-11-16 Elektrische Messung der Dicke einer Halbleiterschicht

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102004055181A Active DE102004055181B3 (de) 2004-11-16 2004-11-16 Verfahren und Anordnung zur elektrischen Messung der Dicke von Halbleiterschichten

Country Status (4)

Country Link
US (1) US20080100311A1 (de)
EP (1) EP1819982A1 (de)
DE (2) DE102004055181B3 (de)
WO (1) WO2006053543A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006002753B4 (de) * 2006-01-20 2010-09-30 X-Fab Semiconductor Foundries Ag Verfahren und Anordnung zur Bewertung der Unterätzung von tiefen Grabenstrukturen in SOI-Scheiben
US8906710B2 (en) * 2011-12-23 2014-12-09 Taiwan Semiconductor Manufacturing Company, Ltd. Monitor test key of epi profile
CN103235190B (zh) * 2013-04-19 2015-10-28 重庆金山科技(集团)有限公司 一种电阻抗测试方法
US9577358B2 (en) * 2014-10-25 2017-02-21 ComponentZee, LLC Fluid pressure activated electrical contact devices and methods
US10003149B2 (en) 2014-10-25 2018-06-19 ComponentZee, LLC Fluid pressure activated electrical contact devices and methods

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7008274A (de) * 1970-06-06 1971-12-08
US4218650A (en) * 1978-06-23 1980-08-19 Nasa Apparatus for measuring semiconductor device resistance
JPS5737846A (en) * 1980-08-20 1982-03-02 Nec Corp Measuring device for thickness of semiconductor layer
US4703252A (en) * 1985-02-22 1987-10-27 Prometrix Corporation Apparatus and methods for resistivity testing
WO1994011745A1 (en) * 1992-11-10 1994-05-26 David Cheng Method and apparatus for measuring film thickness
DE19619686C2 (de) * 1996-04-18 1998-04-09 Fraunhofer Ges Forschung Halbleiter- oder hybridtechnologiebasierte Meßanordnung mit spezieller Impedanzanordnung
US6434217B1 (en) * 2000-10-10 2002-08-13 Advanced Micro Devices, Inc. System and method for analyzing layers using x-ray transmission
JP3928478B2 (ja) * 2002-05-22 2007-06-13 株式会社島津製作所 膜厚測定方法及び膜厚測定装置
US6943571B2 (en) * 2003-03-18 2005-09-13 International Business Machines Corporation Reduction of positional errors in a four point probe resistance measurement
US7212016B2 (en) * 2003-04-30 2007-05-01 The Boeing Company Apparatus and methods for measuring resistance of conductive layers
KR100556529B1 (ko) * 2003-08-18 2006-03-06 삼성전자주식회사 다층 박막의 두께 측정 방법 및 이를 수행하기 위한 장치

Also Published As

Publication number Publication date
EP1819982A1 (de) 2007-08-22
WO2006053543A1 (de) 2006-05-26
DE102004055181B3 (de) 2006-05-11
US20080100311A1 (en) 2008-05-01

Similar Documents

Publication Publication Date Title
DE602005025573D1 (de) Elektronisches Bauelement mit einer sauerstoff-undurchlässigen Aussenschicht
DE602005022807D1 (de) Geräte zur Messung der Erwärmung unter einer Neutralelektrode
DE602004006181D1 (de) Navigationsgerät mit Bestimmung der Abfahrtszeit
SE0501049L (sv) Displacement amount measuring device
NO20064995L (no) Elektronisk termometer med målested
DE602006006680D1 (de) Mikroflächenformmesssonde
DE602005021338D1 (de) Elektrische dermabrasionsvorrichtung
FI20070505A0 (fi) Elektroninen mittanauha
FI20040802A0 (fi) Anturiresistanssin isoloitu mittauspiiri
DE60321255D1 (de) Wärmeleitende Schicht
DE502005002640D1 (de) Elektronischer Elektrizitätszähler
DE602004014241D1 (de) Messen der Intensität von Gerüchen
DE602005002539D1 (de) Integrierte schaltung mit einer sehr kleinen lesediode
DE602005017324D1 (de) Kaskadierbares Halbleiterbauelement zur Ladungsüberwachung der Kondensatoren
DE502005010530D1 (de) Sensor mit kapazitivem messprinzip
DE112005003278A5 (de) Elektrische Messung der Dicke einer Halbleiterschicht
DE602004003904D1 (de) Strukturierung einer schicht einer dickfilmpaste durch bindemitteldiffusion
DE50302530D1 (de) Interferometrische messeinrichtung
DE502004007563D1 (de) Interferometrische messvorrichtung
DE602004002209D1 (de) Messschaltungsanordnung mit erhöhter genauigkeit
DE502005002585D1 (de) Verfahren zur berührungsfreien bestimmung der dicke einer schicht aus elektrisch leitendem material
DE602005026749D1 (de) Störschutz für elektrische Geräte
DE602007003968D1 (de) Messung der Dicke organischer Proben
FI20040903A (fi) Mikromekaaninen anturi mikroaaltotehon mittaamiseen
DE602004002188D1 (de) Absicherung des Testmodus einer integrierten Schaltung

Legal Events

Date Code Title Description
8181 Inventor (new situation)

Inventor name: HERING, SIEGFRIED, 99198 KERSPLEBEN, DE

Inventor name: VAN DER WIEL, APPO, TERVUREN, BE

Inventor name: KUNISS, UTA, 99334 ELLEBEN, DE

Inventor name: HOELZER, GIESBERT, 99089 ERFURT, DE

Inventor name: FREYWALD, KARLHEINZ, 99086 ERFURT, DE

8131 Rejection