DE60035311D1 - Ferroelektrische Struktur aus Bleigermanat mit mehrschichtiger Elektrode - Google Patents

Ferroelektrische Struktur aus Bleigermanat mit mehrschichtiger Elektrode

Info

Publication number
DE60035311D1
DE60035311D1 DE60035311T DE60035311T DE60035311D1 DE 60035311 D1 DE60035311 D1 DE 60035311D1 DE 60035311 T DE60035311 T DE 60035311T DE 60035311 T DE60035311 T DE 60035311T DE 60035311 D1 DE60035311 D1 DE 60035311D1
Authority
DE
Germany
Prior art keywords
multilayer electrode
ferroelectric structure
lead germanate
germanate
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60035311T
Other languages
English (en)
Other versions
DE60035311T2 (de
Inventor
Fengyan Zhang
Tingkai Li
Sheng Teng Hsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE60035311D1 publication Critical patent/DE60035311D1/de
Publication of DE60035311T2 publication Critical patent/DE60035311T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
DE60035311T 1999-05-24 2000-05-24 Ferroelektrische Struktur aus Bleigermanat mit mehrschichtiger Elektrode Expired - Lifetime DE60035311T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US317780 1981-11-03
US09/317,780 US6420740B1 (en) 1999-05-24 1999-05-24 Lead germanate ferroelectric structure with multi-layered electrode

Publications (2)

Publication Number Publication Date
DE60035311D1 true DE60035311D1 (de) 2007-08-09
DE60035311T2 DE60035311T2 (de) 2008-02-28

Family

ID=23235244

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60035311T Expired - Lifetime DE60035311T2 (de) 1999-05-24 2000-05-24 Ferroelektrische Struktur aus Bleigermanat mit mehrschichtiger Elektrode

Country Status (6)

Country Link
US (2) US6420740B1 (de)
EP (1) EP1056125B1 (de)
JP (1) JP3832617B2 (de)
KR (1) KR100373079B1 (de)
DE (1) DE60035311T2 (de)
TW (1) TW494576B (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030001189A1 (en) * 2000-02-24 2003-01-02 Tetsuo Fujiwara Ferroelectric capacitor and semiconductor device
DE10035423C1 (de) * 2000-07-20 2001-11-22 Infineon Technologies Ag Halbleiterbauelement mit einer Schichtenfolge zum ineinander Umwandeln von akustischen oder thermischen Signalen und elektrischen Spannungsänderungen und Verfahren zu dessen Herstellung
US6503763B2 (en) * 2001-03-27 2003-01-07 Sharp Laboratories Of America, Inc. Method of making MFMOS capacitors with high dielectric constant materials
US6586260B2 (en) * 2001-03-28 2003-07-01 Sharp Laboratories Of America, Inc. Single c-axis PGO thin film electrodes having good surface smoothness and uniformity and methods for making the same
US6960479B2 (en) * 2001-07-20 2005-11-01 Intel Corporation Stacked ferroelectric memory device and method of making same
KR100476375B1 (ko) * 2002-12-27 2005-03-17 주식회사 하이닉스반도체 캐패시터 및 그를 구비하는 비휘발 소자의 제조 방법
KR100615600B1 (ko) * 2004-08-09 2006-08-25 삼성전자주식회사 고집적 자기램 소자 및 그 제조방법
US6952364B2 (en) * 2003-03-03 2005-10-04 Samsung Electronics Co., Ltd. Magnetic tunnel junction structures and methods of fabrication
JP4643196B2 (ja) * 2003-07-25 2011-03-02 三星電子株式会社 金属化合物膜の蒸着方法
NO20041733L (no) * 2004-04-28 2005-10-31 Thin Film Electronics Asa Organisk elektronisk krets med funksjonelt mellomsjikt og fremgangsmate til dens fremstilling.
JP2005347510A (ja) * 2004-06-03 2005-12-15 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7041511B2 (en) * 2004-08-20 2006-05-09 Sharp Laboratories Of America, Inc. Pt/PGO etching process for FeRAM applications
US7267996B2 (en) * 2004-08-20 2007-09-11 Sharp Laboratories Of America, Inc. Iridium etching for FeRAM applications
US20060073613A1 (en) * 2004-09-29 2006-04-06 Sanjeev Aggarwal Ferroelectric memory cells and methods for fabricating ferroelectric memory cells and ferroelectric capacitors thereof
US20060141225A1 (en) * 2004-12-28 2006-06-29 Borland William J Oxygen doped firing of barium titanate on copper foil
US9305998B2 (en) * 2013-02-11 2016-04-05 Texas Instruments Incorporated Adhesion of ferroelectric material to underlying conductive capacitor plate
US8809827B1 (en) * 2013-03-13 2014-08-19 International Business Machines Corporation Thermally assisted MRAM with multilayer strap and top contact for low thermal conductivity
US9515251B2 (en) 2014-04-09 2016-12-06 International Business Machines Corporation Structure for thermally assisted MRAM
JP6367152B2 (ja) * 2015-06-08 2018-08-01 東芝メモリ株式会社 記憶装置
JP6039026B1 (ja) * 2015-09-04 2016-12-07 Ｄｏｗａエレクトロニクス株式会社 ｎ型オーミック電極の製造方法、ならびにｎ型オーミック電極、ｎ型電極およびＩＩＩ族窒化物半導体発光素子
US10038092B1 (en) * 2017-05-24 2018-07-31 Sandisk Technologies Llc Three-level ferroelectric memory cell using band alignment engineering
JP7200537B2 (ja) * 2018-08-21 2023-01-10 富士フイルムビジネスイノベーション株式会社 半導体基板の製造方法
US11916127B2 (en) 2021-06-16 2024-02-27 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-layer electrode to improve performance of ferroelectric memory device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0042009A1 (de) * 1980-06-11 1981-12-23 University of Illinois Foundation Keramiken mit inneren Sperrschichten und Verfahren zu ihrer Herstellung
GB8802930D0 (en) 1988-02-09 1988-03-09 Plasmon Data Systems Uk Ltd Improved data storage medium
US5005102A (en) * 1989-06-20 1991-04-02 Ramtron Corporation Multilayer electrodes for integrated circuit capacitors
JP3197782B2 (ja) * 1994-04-29 2001-08-13 インターナショナル・ビジネス・マシーンズ・コーポレ−ション 半導体集積回路コンデンサおよびその電極構造
US5585300A (en) 1994-08-01 1996-12-17 Texas Instruments Incorporated Method of making conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes
JP3279453B2 (ja) 1995-03-20 2002-04-30 シャープ株式会社 不揮発性ランダムアクセスメモリ
KR100333234B1 (ko) * 1995-06-07 2002-06-20 마츠시타 덴끼 산교 가부시키가이샤 기판및배선층사이에버퍼층을가진집적회로
JP3504046B2 (ja) * 1995-12-05 2004-03-08 株式会社ルネサステクノロジ 半導体装置の製造方法
KR100246989B1 (ko) 1996-09-09 2000-03-15 김영환 반도체소자의 캐패시터 형성방법
US5790366A (en) * 1996-12-06 1998-08-04 Sharp Kabushiki Kaisha High temperature electrode-barriers for ferroelectric and other capacitor structures
US5807774A (en) * 1996-12-06 1998-09-15 Sharp Kabushiki Kaisha Simple method of fabricating ferroelectric capacitors
US6011284A (en) * 1996-12-26 2000-01-04 Sony Corporation Electronic material, its manufacturing method, dielectric capacitor, nonvolatile memory and semiconductor device
US5932904A (en) * 1997-03-07 1999-08-03 Sharp Laboratories Of America, Inc. Two transistor ferroelectric memory cell
US6107136A (en) * 1998-08-17 2000-08-22 Motorola Inc. Method for forming a capacitor structure
US6410343B1 (en) * 1999-04-28 2002-06-25 Sharp Laboratories Of America, Inc. C-axis oriented lead germanate film and deposition method

Also Published As

Publication number Publication date
EP1056125B1 (de) 2007-06-27
JP2001007299A (ja) 2001-01-12
US6759250B2 (en) 2004-07-06
US20020180045A1 (en) 2002-12-05
DE60035311T2 (de) 2008-02-28
US6420740B1 (en) 2002-07-16
EP1056125A2 (de) 2000-11-29
KR20000077404A (ko) 2000-12-26
TW494576B (en) 2002-07-11
EP1056125A3 (de) 2003-08-06
KR100373079B1 (ko) 2003-02-25
JP3832617B2 (ja) 2006-10-11

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