DE60032962D1 - Breitbandiger Hochleistungswanderfeldphotodetektor - Google Patents

Breitbandiger Hochleistungswanderfeldphotodetektor

Info

Publication number
DE60032962D1
DE60032962D1 DE60032962T DE60032962T DE60032962D1 DE 60032962 D1 DE60032962 D1 DE 60032962D1 DE 60032962 T DE60032962 T DE 60032962T DE 60032962 T DE60032962 T DE 60032962T DE 60032962 D1 DE60032962 D1 DE 60032962D1
Authority
DE
Germany
Prior art keywords
hike
high performance
broadband high
field photodetector
photodetector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60032962T
Other languages
English (en)
Other versions
DE60032962T2 (de
Inventor
Robert R Hayes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DirecTV Group Inc
Original Assignee
Hughes Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Electronics Corp filed Critical Hughes Electronics Corp
Application granted granted Critical
Publication of DE60032962D1 publication Critical patent/DE60032962D1/de
Publication of DE60032962T2 publication Critical patent/DE60032962T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
DE60032962T 1999-04-28 2000-04-26 Breitbandiger Hochleistungswanderfeldphotodetektor Expired - Lifetime DE60032962T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/301,637 US6278820B1 (en) 1999-04-28 1999-04-28 High power and large bandwidth traveling-wave photodetector
US301637 1999-04-28

Publications (2)

Publication Number Publication Date
DE60032962D1 true DE60032962D1 (de) 2007-03-08
DE60032962T2 DE60032962T2 (de) 2007-10-18

Family

ID=23164225

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60032962T Expired - Lifetime DE60032962T2 (de) 1999-04-28 2000-04-26 Breitbandiger Hochleistungswanderfeldphotodetektor

Country Status (4)

Country Link
US (1) US6278820B1 (de)
EP (1) EP1049177B1 (de)
JP (1) JP3477147B2 (de)
DE (1) DE60032962T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU1619601A (en) * 1999-11-19 2001-05-30 New Focus, Inc. Method and apparatus for an electro optic converter
US7005687B2 (en) * 2002-12-24 2006-02-28 Electronics And Telecommunications Research Institute Photodetector
KR20050025384A (ko) * 2003-09-06 2005-03-14 한국전자통신연구원 도파로형 광 검출기
KR100577929B1 (ko) * 2004-11-25 2006-05-10 한국전자통신연구원 도파로형 광 검출기
US7269197B2 (en) * 2005-09-21 2007-09-11 Agere Systems Inc. Controlling overspray coating in semiconductor devices
GB0606540D0 (en) * 2006-03-31 2006-05-10 Univ London Photodetector
US20090060412A1 (en) * 2007-08-30 2009-03-05 Photonic Systems, Inc. High-Power High-Frequency Photodetector
US8290325B2 (en) * 2008-06-30 2012-10-16 Intel Corporation Waveguide photodetector device and manufacturing method thereof
US9006637B2 (en) 2008-11-12 2015-04-14 Optis Cellular Technology, Llc Scalable large area photo detector with asymmetric microstrip transition
JP5480512B2 (ja) * 2009-03-11 2014-04-23 国立大学法人広島大学 光検出器およびそれを備えた光集積回路装置
JP2011209371A (ja) * 2010-03-29 2011-10-20 Mitsubishi Electric Corp 光変調器
CN102566090B (zh) 2010-12-22 2014-12-10 李冰 一种光波导开关
CN102569513B (zh) 2010-12-22 2016-02-17 李冰 一种波导光探测器及其制备方法
CN102565932B (zh) 2011-01-14 2014-10-08 李冰 色散校正的阵列波导光栅
CN103545399B (zh) * 2013-10-28 2016-06-29 北京工业大学 行波电极渐变耦合脊波导InP双异质结光敏晶体管
US9804475B1 (en) * 2015-04-16 2017-10-31 Aurrion, Inc. Radio-frequency loss reduction in photonic circuits
JP7087308B2 (ja) * 2017-09-13 2022-06-21 富士通株式会社 受光器、バランス型受光器、受光器の製造方法
CN110364590B (zh) * 2019-07-09 2024-05-10 武汉光谷量子技术有限公司 一种高增益带宽积的光探测器及其制造方法
CN111106191B (zh) * 2020-01-06 2021-09-28 电子科技大学 20GHz行波光波导探测器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2253480A (en) * 1991-03-07 1992-09-09 Marconi Gec Ltd Optical waveguide photodetector
US5270532A (en) * 1992-06-15 1993-12-14 The United States Of America As Represented By The United States Department Of Energy Traveling-wave photodetector
US5404006A (en) * 1993-02-22 1995-04-04 Hughes Aircraft Company High power capacity optical receiver apparatus and method employing distributed photodetectors
US6177686B1 (en) * 1999-06-23 2001-01-23 Trw Inc. High power waveguide photodiode with an absorption layer with reduced absorption coefficient

Also Published As

Publication number Publication date
EP1049177A3 (de) 2003-08-06
EP1049177B1 (de) 2007-01-17
JP3477147B2 (ja) 2003-12-10
EP1049177A2 (de) 2000-11-02
DE60032962T2 (de) 2007-10-18
JP2000332286A (ja) 2000-11-30
US6278820B1 (en) 2001-08-21

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Legal Events

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