DE60026449D1 - Verfahren zur überkritischen Trocknung - Google Patents

Verfahren zur überkritischen Trocknung

Info

Publication number
DE60026449D1
DE60026449D1 DE60026449T DE60026449T DE60026449D1 DE 60026449 D1 DE60026449 D1 DE 60026449D1 DE 60026449 T DE60026449 T DE 60026449T DE 60026449 T DE60026449 T DE 60026449T DE 60026449 D1 DE60026449 D1 DE 60026449D1
Authority
DE
Germany
Prior art keywords
supercritical drying
supercritical
drying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60026449T
Other languages
English (en)
Other versions
DE60026449T2 (de
Inventor
Namatsu Hideo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP34620599A external-priority patent/JP3553838B2/ja
Priority claimed from JP2000134441A external-priority patent/JP3553856B2/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE60026449D1 publication Critical patent/DE60026449D1/de
Application granted granted Critical
Publication of DE60026449T2 publication Critical patent/DE60026449T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00—Drying solid materials or objects by processes not involving the application of heat
    • F26B5/005—Drying solid materials or objects by processes not involving the application of heat by dipping them into or mixing them with a chemical liquid, e.g. organic; chemical, e.g. organic, dewatering aids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
DE60026449T 1999-12-06 2000-12-01 Verfahren zur überkritischen Trocknung Expired - Lifetime DE60026449T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP34620599 1999-12-06
JP34620599A JP3553838B2 (ja) 1999-12-06 1999-12-06 超臨界乾燥方法
JP2000134441A JP3553856B2 (ja) 2000-05-08 2000-05-08 超臨界乾燥方法
JP2000134441 2000-05-08

Publications (2)

Publication Number Publication Date
DE60026449D1 true DE60026449D1 (de) 2006-05-04
DE60026449T2 DE60026449T2 (de) 2006-11-16

Family

ID=26578221

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60026449T Expired - Lifetime DE60026449T2 (de) 1999-12-06 2000-12-01 Verfahren zur überkritischen Trocknung

Country Status (4)

Country Link
US (1) US6576066B1 (de)
EP (1) EP1106946B1 (de)
KR (1) KR100400194B1 (de)
DE (1) DE60026449T2 (de)

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US6090217A (en) * 1998-12-09 2000-07-18 Kittle; Paul A. Surface treatment of semiconductor substrates
US7044143B2 (en) * 1999-05-14 2006-05-16 Micell Technologies, Inc. Detergent injection systems and methods for carbon dioxide microelectronic substrate processing systems
US20040003831A1 (en) * 2000-04-18 2004-01-08 Mount David J. Supercritical fluid cleaning process for precision surfaces
TWI221316B (en) * 2001-04-24 2004-09-21 Kobe Steel Ltd Process for drying an object having microstructure and the object obtained by the same
KR20020095103A (ko) * 2001-06-11 2002-12-20 제이에스알 가부시끼가이샤 실리카막의 형성 방법, 실리카막, 절연막 및 반도체 장치
US7326673B2 (en) * 2001-12-31 2008-02-05 Advanced Technology Materials, Inc. Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates
US6846380B2 (en) 2002-06-13 2005-01-25 The Boc Group, Inc. Substrate processing apparatus and related systems and methods
US7011716B2 (en) * 2003-04-29 2006-03-14 Advanced Technology Materials, Inc. Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products
US6880560B2 (en) 2002-11-18 2005-04-19 Techsonic Substrate processing apparatus for processing substrates using dense phase gas and sonic waves
US7119020B2 (en) * 2002-12-04 2006-10-10 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor device
US7737097B2 (en) * 2003-06-27 2010-06-15 Lam Research Corporation Method for removing contamination from a substrate and for making a cleaning solution
US7913703B1 (en) 2003-06-27 2011-03-29 Lam Research Corporation Method and apparatus for uniformly applying a multi-phase cleaning solution to a substrate
US7799141B2 (en) * 2003-06-27 2010-09-21 Lam Research Corporation Method and system for using a two-phases substrate cleaning compound
US8316866B2 (en) * 2003-06-27 2012-11-27 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
US8522801B2 (en) * 2003-06-27 2013-09-03 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
US7648584B2 (en) * 2003-06-27 2010-01-19 Lam Research Corporation Method and apparatus for removing contamination from substrate
US20040261823A1 (en) * 2003-06-27 2004-12-30 Lam Research Corporation Method and apparatus for removing a target layer from a substrate using reactive gases
JP4464125B2 (ja) * 2003-12-22 2010-05-19 ソニー株式会社 構造体の作製方法及びシリコン酸化膜エッチング剤
US8522799B2 (en) 2005-12-30 2013-09-03 Lam Research Corporation Apparatus and system for cleaning a substrate
US7862662B2 (en) * 2005-12-30 2011-01-04 Lam Research Corporation Method and material for cleaning a substrate
US8323420B2 (en) 2005-06-30 2012-12-04 Lam Research Corporation Method for removing material from semiconductor wafer and apparatus for performing the same
US7416370B2 (en) * 2005-06-15 2008-08-26 Lam Research Corporation Method and apparatus for transporting a substrate using non-Newtonian fluid
US8043441B2 (en) 2005-06-15 2011-10-25 Lam Research Corporation Method and apparatus for cleaning a substrate using non-Newtonian fluids
US7568490B2 (en) * 2003-12-23 2009-08-04 Lam Research Corporation Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids
US20050183740A1 (en) * 2004-02-19 2005-08-25 Fulton John L. Process and apparatus for removing residues from semiconductor substrates
WO2005113167A1 (en) * 2004-05-07 2005-12-01 Advanced Technology Materials, Inc. Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products
SG154438A1 (en) * 2005-12-30 2009-08-28 Lam Res Corp Cleaning compound and method and system for using the cleaning compound
KR100774093B1 (ko) * 2006-08-09 2007-11-06 부경대학교 산학협력단 초임계이산화탄소 건조에서 패턴붕괴 방지에 유용한 방법
JP4762098B2 (ja) 2006-09-28 2011-08-31 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
US20080148595A1 (en) * 2006-12-20 2008-06-26 Lam Research Corporation Method and apparatus for drying substrates using a surface tensions reducing gas
US7897213B2 (en) * 2007-02-08 2011-03-01 Lam Research Corporation Methods for contained chemical surface treatment
US8226775B2 (en) 2007-12-14 2012-07-24 Lam Research Corporation Methods for particle removal by single-phase and two-phase media
US8153533B2 (en) * 2008-09-24 2012-04-10 Lam Research Methods and systems for preventing feature collapse during microelectronic topography fabrication
US8961701B2 (en) * 2008-09-24 2015-02-24 Lam Research Corporation Method and system of drying a microelectronic topography
US20100184301A1 (en) * 2009-01-20 2010-07-22 Lam Research Methods for Preventing Precipitation of Etch Byproducts During an Etch Process and/or Subsequent Rinse Process
EP2615630B1 (de) * 2010-09-08 2019-11-20 Mitsubishi Gas Chemical Company, Inc. Verwendung von behandlungsflüssigkeit zur hemmung von musterzusammenbrüchen in mikrostrukturen und verfahren zur herstellung von mikrostrukturen unter verwendung der behandlungsflüssigkeit
TWI689004B (zh) * 2012-11-26 2020-03-21 美商應用材料股份有限公司 用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理
WO2015067275A1 (en) * 2013-11-06 2015-05-14 Superwood A/S A method for liquid treatment of a wood species
US10221488B2 (en) * 2015-09-18 2019-03-05 General Electric Company Supercritical water method for treating internal passages
KR20200056515A (ko) * 2018-11-14 2020-05-25 삼성전자주식회사 기판 건조 방법, 포토레지스트 현상 방법, 그들을 포함하는 포토리소그래피 방법, 및 기판 건조 장치
KR102387423B1 (ko) * 2019-11-28 2022-04-18 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN112404026B (zh) * 2020-09-11 2022-03-01 上海金堂轻纺新材料科技有限公司 一种除油污废水循环利用的工艺
CN114136060A (zh) * 2021-11-30 2022-03-04 唐川 超临界二氧化碳干燥设备控制系统

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JPH06105683B2 (ja) 1992-04-23 1994-12-21 株式会社ソルテック レジストパターン形成方法
US5370742A (en) * 1992-07-13 1994-12-06 The Clorox Company Liquid/supercritical cleaning with decreased polymer damage
JPH06196472A (ja) * 1992-12-22 1994-07-15 Soltec:Kk ウェットエッチング方法及びウェット洗浄方法
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JPH09139374A (ja) * 1995-11-15 1997-05-27 Hitachi Ltd 表面処理方法および装置ならびにこれにより得られた素子
US5733964A (en) * 1996-06-20 1998-03-31 Board Of Regents, The University Of Texas System Surfactants for heterogeneous processes in liquid or supercritical CO2
KR19980018262A (ko) 1996-08-01 1998-06-05 윌리엄 비.켐플러 입출력포트 및 램 메모리 어드레스 지정기술
EP0830890A1 (de) 1996-09-18 1998-03-25 Air Products And Chemicals, Inc. In flüssigem superkritischem CO2 Gas verwendete Tenside
EP0893166A4 (de) * 1996-09-25 2004-11-10 Shuzurifuresher Kaihatsukyodok Waschsystem, das verflüssigtes gas hoher dichte verwendet
KR100417647B1 (ko) * 1996-12-28 2004-04-13 주식회사 하이닉스반도체 반도체 소자의 클리닝 방법
JPH1187306A (ja) * 1997-09-12 1999-03-30 Nippon Telegr & Teleph Corp <Ntt> 超臨界乾燥装置
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Also Published As

Publication number Publication date
KR20010062139A (ko) 2001-07-07
US6576066B1 (en) 2003-06-10
EP1106946A3 (de) 2002-04-10
KR100400194B1 (ko) 2003-10-01
EP1106946B1 (de) 2006-03-08
EP1106946A2 (de) 2001-06-13
DE60026449T2 (de) 2006-11-16

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