DE60017385D1 - Temperaturgeregelte begasung von deionisiertem wasser zur megaschallreinigung von halbleiterscheiben - Google Patents
Temperaturgeregelte begasung von deionisiertem wasser zur megaschallreinigung von halbleiterscheibenInfo
- Publication number
- DE60017385D1 DE60017385D1 DE60017385T DE60017385T DE60017385D1 DE 60017385 D1 DE60017385 D1 DE 60017385D1 DE 60017385 T DE60017385 T DE 60017385T DE 60017385 T DE60017385 T DE 60017385T DE 60017385 D1 DE60017385 D1 DE 60017385D1
- Authority
- DE
- Germany
- Prior art keywords
- bassing
- mega
- semi
- controlled
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004140 cleaning Methods 0.000 title 1
- 239000008367 deionised water Substances 0.000 title 1
- 229910021641 deionized water Inorganic materials 0.000 title 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/318,155 US6295998B1 (en) | 1999-05-25 | 1999-05-25 | Temperature controlled gassification of deionized water for megasonic cleaning of semiconductor wafers |
PCT/US2000/011066 WO2000071268A1 (en) | 1999-05-25 | 2000-04-25 | Temperature controlled gassification of deionized water for megasonic cleaning of semiconductor wafers |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60017385D1 true DE60017385D1 (de) | 2005-02-17 |
Family
ID=23236907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60017385T Expired - Lifetime DE60017385D1 (de) | 1999-05-25 | 2000-04-25 | Temperaturgeregelte begasung von deionisiertem wasser zur megaschallreinigung von halbleiterscheiben |
Country Status (8)
Country | Link |
---|---|
US (1) | US6295998B1 (de) |
EP (1) | EP1181112B1 (de) |
JP (1) | JP3624162B2 (de) |
KR (1) | KR100454005B1 (de) |
CN (1) | CN1351523A (de) |
DE (1) | DE60017385D1 (de) |
TW (1) | TW506857B (de) |
WO (1) | WO2000071268A1 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6982006B1 (en) * | 1999-10-19 | 2006-01-03 | Boyers David G | Method and apparatus for treating a substrate with an ozone-solvent solution |
KR100360399B1 (ko) * | 2000-03-07 | 2002-11-13 | 삼성전자 주식회사 | 반구형입자(hsg)막을 구비한 반도체소자의 제조방법 |
US7156111B2 (en) * | 2001-07-16 | 2007-01-02 | Akrion Technologies, Inc | Megasonic cleaning using supersaturated cleaning solution |
JP2003234320A (ja) * | 2002-02-06 | 2003-08-22 | Nec Electronics Corp | 基板の洗浄方法、洗浄薬液、洗浄装置及び半導体装置 |
JP4472234B2 (ja) * | 2002-06-12 | 2010-06-02 | 大日本スクリーン製造株式会社 | 基板処理装置および不活性ガス濃度制御方法 |
JP4319445B2 (ja) * | 2002-06-20 | 2009-08-26 | 大日本スクリーン製造株式会社 | 基板処理装置 |
TWI377453B (en) * | 2003-07-31 | 2012-11-21 | Akrion Technologies Inc | Process sequence for photoresist stripping and/or cleaning of photomasks for integrated circuit manufacturing |
US7270130B2 (en) * | 2003-10-15 | 2007-09-18 | Infineon Technologies Ag | Semiconductor device cleaning employing heterogeneous nucleation for controlled cavitation |
JP2006066727A (ja) * | 2004-08-27 | 2006-03-09 | Toshiba Corp | 半導体製造装置及び薬液交換方法 |
US7718012B2 (en) * | 2004-12-30 | 2010-05-18 | Infineon Technologies Ag | Method of degasification in semiconductor cleaning |
US20070295357A1 (en) * | 2006-06-27 | 2007-12-27 | Lovejoy Michael L | Removing metal using an oxidizing chemistry |
US20080011322A1 (en) * | 2006-07-11 | 2008-01-17 | Frank Weber | Cleaning systems and methods |
DE102007027112B4 (de) * | 2007-06-13 | 2011-06-22 | Siltronic AG, 81737 | Verfahren zur Reinigung, Trocknung und Hydrophilierung einer Halbleiterscheibe |
JP5019370B2 (ja) * | 2007-07-12 | 2012-09-05 | ルネサスエレクトロニクス株式会社 | 基板の洗浄方法および洗浄装置 |
JP2009081366A (ja) * | 2007-09-27 | 2009-04-16 | Elpida Memory Inc | バッチ処理装置 |
US7682457B2 (en) * | 2007-10-04 | 2010-03-23 | Applied Materials, Inc. | Frontside structure damage protected megasonics clean |
US8172641B2 (en) * | 2008-07-17 | 2012-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMP by controlling polish temperature |
US8619231B2 (en) * | 2009-05-21 | 2013-12-31 | Nikon Corporation | Cleaning method, exposure method, and device manufacturing method |
CN102097293B (zh) * | 2010-11-19 | 2014-03-12 | 嘉盛半导体(苏州)有限公司 | 半导体封装产品的清洗机台及清洗工艺 |
CN102847480B (zh) * | 2012-09-19 | 2014-07-30 | 北京七星华创电子股份有限公司 | 化学液混合装置及方法 |
CN105826256B (zh) * | 2015-01-06 | 2020-02-07 | 中芯国际集成电路制造(上海)有限公司 | Cmos晶体管的形成方法 |
CN108598019A (zh) * | 2018-04-17 | 2018-09-28 | 德淮半导体有限公司 | 晶圆清洗设备及其清洗方法 |
JP7355615B2 (ja) * | 2019-11-25 | 2023-10-03 | 東京エレクトロン株式会社 | 基板洗浄装置及び基板洗浄方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4907611A (en) * | 1986-12-22 | 1990-03-13 | S & C Co., Ltd. | Ultrasonic washing apparatus |
US4865060A (en) * | 1989-01-25 | 1989-09-12 | S & C Co., Ltd. | Ultrasonic cleaning system |
CH679890A5 (de) * | 1989-11-17 | 1992-04-30 | Orbisphere Lab | |
JPH04107922A (ja) * | 1990-08-29 | 1992-04-09 | Fujitsu Ltd | 半導体洗浄液およびそれを用いた洗浄方法 |
US5656097A (en) * | 1993-10-20 | 1997-08-12 | Verteq, Inc. | Semiconductor wafer cleaning system |
US5800626A (en) * | 1997-02-18 | 1998-09-01 | International Business Machines Corporation | Control of gas content in process liquids for improved megasonic cleaning of semiconductor wafers and microelectronics substrates |
US6039055A (en) * | 1998-01-08 | 2000-03-21 | International Business Machines Corporation | Wafer cleaning with dissolved gas concentration control |
-
1999
- 1999-05-25 US US09/318,155 patent/US6295998B1/en not_active Expired - Fee Related
-
2000
- 2000-04-25 DE DE60017385T patent/DE60017385D1/de not_active Expired - Lifetime
- 2000-04-25 JP JP2000619562A patent/JP3624162B2/ja not_active Expired - Fee Related
- 2000-04-25 EP EP00923612A patent/EP1181112B1/de not_active Expired - Lifetime
- 2000-04-25 KR KR10-2001-7015116A patent/KR100454005B1/ko not_active IP Right Cessation
- 2000-04-25 WO PCT/US2000/011066 patent/WO2000071268A1/en active IP Right Grant
- 2000-04-25 CN CN00808033A patent/CN1351523A/zh active Pending
- 2000-08-08 TW TW089110051A patent/TW506857B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2003500842A (ja) | 2003-01-07 |
EP1181112A1 (de) | 2002-02-27 |
KR100454005B1 (ko) | 2004-10-20 |
JP3624162B2 (ja) | 2005-03-02 |
CN1351523A (zh) | 2002-05-29 |
EP1181112B1 (de) | 2005-01-12 |
WO2000071268A1 (en) | 2000-11-30 |
KR20020009620A (ko) | 2002-02-01 |
TW506857B (en) | 2002-10-21 |
US6295998B1 (en) | 2001-10-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |