DE60009261D1 - Mehrschichtige gedämpfte phasenschiebermaske - Google Patents

Mehrschichtige gedämpfte phasenschiebermaske

Info

Publication number
DE60009261D1
DE60009261D1 DE60009261T DE60009261T DE60009261D1 DE 60009261 D1 DE60009261 D1 DE 60009261D1 DE 60009261 T DE60009261 T DE 60009261T DE 60009261 T DE60009261 T DE 60009261T DE 60009261 D1 DE60009261 D1 DE 60009261D1
Authority
DE
Germany
Prior art keywords
phase shift
masks
multilayer
shift mask
attenuating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60009261T
Other languages
English (en)
Other versions
DE60009261T2 (de
Inventor
Francis Carcia
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Application granted granted Critical
Publication of DE60009261D1 publication Critical patent/DE60009261D1/de
Publication of DE60009261T2 publication Critical patent/DE60009261T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
DE60009261T 1999-01-14 2000-01-13 Mehrschichtige gedämpfte phasenschiebermaske Expired - Fee Related DE60009261T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11590699P 1999-01-14 1999-01-14
US115906P 1999-01-14
PCT/US2000/000871 WO2000042473A1 (en) 1999-01-14 2000-01-13 Multilayer attenuating phase-shift masks

Publications (2)

Publication Number Publication Date
DE60009261D1 true DE60009261D1 (de) 2004-04-29
DE60009261T2 DE60009261T2 (de) 2005-03-03

Family

ID=22364059

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60009261T Expired - Fee Related DE60009261T2 (de) 1999-01-14 2000-01-13 Mehrschichtige gedämpfte phasenschiebermaske

Country Status (9)

Country Link
US (1) US6274280B1 (de)
EP (1) EP1141775B1 (de)
JP (1) JP2002535702A (de)
KR (1) KR20010112241A (de)
CN (1) CN1337012A (de)
AT (1) ATE262690T1 (de)
DE (1) DE60009261T2 (de)
TW (1) TW449675B (de)
WO (1) WO2000042473A1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6835505B2 (en) * 1998-10-08 2004-12-28 Rochester Institute Of Technology Mask for projection photolithography at or below about 160 nm and a method thereof
JP2002296758A (ja) * 2001-03-30 2002-10-09 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP2002296757A (ja) * 2001-03-30 2002-10-09 Hoya Corp ハーフトーン型位相シフトマスク及びマスクブランク
US7060394B2 (en) * 2001-03-30 2006-06-13 Hoya Corporation Halftone phase-shift mask blank and halftone phase-shift mask
JP4737483B2 (ja) * 2001-03-30 2011-08-03 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
US20020197509A1 (en) * 2001-04-19 2002-12-26 Carcia Peter Francis Ion-beam deposition process for manufacturing multi-layered attenuated phase shift photomask blanks
AU2002252701A1 (en) * 2001-04-19 2002-11-05 Peter Francis Carcia Ion-beam deposition process for manufacturing binary photomask blanks
US6756160B2 (en) 2001-04-19 2004-06-29 E.I. Du Pont De Nemours. And Company Ion-beam deposition process for manufacturing attenuated phase shift photomask blanks
DE10150874A1 (de) * 2001-10-04 2003-04-30 Zeiss Carl Optisches Element und Verfahren zu dessen Herstellung sowie ein Lithographiegerät und ein Verfahren zur Herstellung eines Halbleiterbauelements
US6872496B2 (en) * 2002-10-31 2005-03-29 Taiwan Semiconductor Manufacturing Company AlSixOy as a new bi-layer high transmittance attenuating phase shifting mask material for 193 nanometer lithography
US7026076B2 (en) 2003-03-03 2006-04-11 Freescale Semiconductor, Inc. Method of patterning photoresist on a wafer using a reflective mask with a multi-layer ARC
US6875546B2 (en) 2003-03-03 2005-04-05 Freescale Semiconductor, Inc. Method of patterning photoresist on a wafer using an attenuated phase shift mask
US20050048375A1 (en) * 2003-08-27 2005-03-03 Cheng-Ming Lin Method of making an attenuated phase-shifting mask from a mask blank
TW200513812A (en) * 2003-09-05 2005-04-16 Schott Ag Attenuating phase shift mask blank and photomask
US7029803B2 (en) * 2003-09-05 2006-04-18 Schott Ag Attenuating phase shift mask blank and photomask
US20050260504A1 (en) * 2004-04-08 2005-11-24 Hans Becker Mask blank having a protection layer
KR101316633B1 (ko) * 2004-07-28 2013-10-15 삼성디스플레이 주식회사 다결정 규소용 마스크 및 이의 제조방법과, 이를 이용한박막트랜지스터의 제조방법
JP5483366B2 (ja) * 2011-03-11 2014-05-07 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスクの製造方法
JP6005530B2 (ja) * 2013-01-15 2016-10-12 Hoya株式会社 マスクブランク、位相シフトマスクおよびこれらの製造方法
JP2018063441A (ja) * 2013-11-06 2018-04-19 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法
JP6104852B2 (ja) * 2014-07-14 2017-03-29 Hoya株式会社 マスクブランクの製造方法、位相シフトマスクの製造方法および半導体デバイスの製造方法
US10942440B2 (en) 2016-08-26 2021-03-09 Hoya Corporation Mask blank, phase shift mask, method of manufacturing phase shift mask, and method of manufacturing semiconductor device
WO2018056033A1 (ja) * 2016-09-26 2018-03-29 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法
JP6437602B2 (ja) * 2017-07-28 2018-12-12 Hoya株式会社 マスクブランク、転写用マスクの製造方法、および半導体デバイスの製造方法
JP6490786B2 (ja) * 2017-12-25 2019-03-27 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6547019B1 (ja) 2018-02-22 2019-07-17 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法
SG11202009172VA (en) 2018-03-26 2020-10-29 Hoya Corp Mask blank, phase shift mask, and method for manufacturing semiconductor device
KR102473558B1 (ko) * 2019-10-23 2022-12-05 주식회사 에스앤에스텍 극자외선 리소그래피용 하프톤 위상반전 블랭크 마스크 및 포토마스크

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5897976A (en) * 1996-05-20 1999-04-27 E. I. Du Pont De Nemours And Company Attenuating embedded phase shift photomask blanks
US5897977A (en) 1996-05-20 1999-04-27 E. I. Du Pont De Nemours And Company Attenuating embedded phase shift photomask blanks

Also Published As

Publication number Publication date
CN1337012A (zh) 2002-02-20
DE60009261T2 (de) 2005-03-03
WO2000042473A1 (en) 2000-07-20
US6274280B1 (en) 2001-08-14
KR20010112241A (ko) 2001-12-20
ATE262690T1 (de) 2004-04-15
EP1141775A1 (de) 2001-10-10
EP1141775B1 (de) 2004-03-24
JP2002535702A (ja) 2002-10-22
TW449675B (en) 2001-08-11

Similar Documents

Publication Publication Date Title
DE60009261D1 (de) Mehrschichtige gedämpfte phasenschiebermaske
TW334525B (en) Attenuating embedded phase shift photomask blanks
TW346556B (en) Halftone phase shift mask, blank for the same, methods of manufacturing these
EP1152292A3 (de) Halbton-Phasenschiebermaske sowie Maskenrohling
TW354392B (en) Photomask blanks
PT839122E (pt) Vidraca de revestimento anti-reflexo
BR9002937A (pt) Corpo polimerico refetivo
ATE465427T1 (de) Transparentes substrat mit einer antireflexschicht
GB2438113A (en) Extreme ultraviolet mask with leaky absorber and method for its fabrication
EP1170618A3 (de) Optische mehrschichtige Struktur, optische Schalteinrichtung, und Bildanzeigevorrichtung
WO1995022083A3 (en) Photomask blanks
ATE185905T1 (de) Bedämpfte phasenschiebemaske und verfahren zu ihrer herstellung
EP0833172A3 (de) Lichtabsorbierender Filter und optische Vorrichtung
WO2002086621A3 (en) Ion-beam deposition process for manufacturing multilayered attenuated phase shift photomask blanks
WO2005050316A3 (en) Method involving a mask or a reticle
GB2365540A (en) High contrast screen material
DE59811164D1 (de) Verpackungen und Packhilfsmittel
DE60138191D1 (de) Flschungsveränderungsschutzmaterial
DE69729181D1 (de) Absorbierender Wegwerfartikel mit einer atmungsaktiven unteren Schicht, die sich wie Gewebe anfühlt
TW354391B (en) Attenuating embedded phase shift photomask blanks
CO4900103A1 (es) Documento de seguridad que contiene un arreglo no ortogonal
ATE230853T1 (de) Optische elemente der nachrichtentechnik aus kunststoff
BR0012638A (pt) Pelìcula multicamada de alta proteção
EA200500166A1 (ru) Способ формирования монокристаллической структуры и кремниевый материал, стойкий к воздействию н и он
FI910166A (fi) Foerfarande foer framstaellning av keramiska kompositkroppar och saolunda framstaellda kroppar.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee