DE4232745C2 - Bonddraht zum Ultraschallbonden - Google Patents

Bonddraht zum Ultraschallbonden

Info

Publication number
DE4232745C2
DE4232745C2 DE4232745A DE4232745A DE4232745C2 DE 4232745 C2 DE4232745 C2 DE 4232745C2 DE 4232745 A DE4232745 A DE 4232745A DE 4232745 A DE4232745 A DE 4232745A DE 4232745 C2 DE4232745 C2 DE 4232745C2
Authority
DE
Germany
Prior art keywords
wire
bond
bond wire
ultrasonic bonding
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE4232745A
Other languages
English (en)
Other versions
DE4232745A1 (de
Inventor
Gerhard Blasek
Uwe Buergel
Frank Rudolf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Technische Universitaet Dresden
Original Assignee
Technische Universitaet Dresden
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Technische Universitaet Dresden filed Critical Technische Universitaet Dresden
Priority to DE4232745A priority Critical patent/DE4232745C2/de
Publication of DE4232745A1 publication Critical patent/DE4232745A1/de
Application granted granted Critical
Publication of DE4232745C2 publication Critical patent/DE4232745C2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

Die Erfindung betrifft einen Bonddraht bzw. ein Bändchen (im folgenden Bonddraht) aus Gold oder Kupfer, zum Ultraschallbonden bei Raumtemperatur.
Bonddrähte aus Gold oder Kupfer werden üblicherweise durch Thermosonic-Drahtbonden bei Temperaturen zwischen 150 und 350°C verarbeitet. Niedrigere Verarbeitungstemperaturen führen zu verschlechterter Verfah­ renszuverlässigkeit.
Abgesehen von dem erhöhten Aufwand zur Vorwärmung der Bauelemente und für beheizte Werkzeuge ist die untere Temperaturgrenze von 150°C für einige Bauelemente und schon vorhandene Kontaktierungen zu hoch.
Es ist bekannt, daß der Zustand der Oberflächen der Bondpartner einen großen Einfluß auf das Bondergebnis besitzt. Entsprechend hoch sind die Anforderungen an die Reinheit der Oberflächen.
Aus JP Pat. Abstr. 62-287634 A ist ein Bonddraht mit einem Kern aus Kupfer bekannt, der einen Mantel aus Ag, Sn, Be, Zn, Al oder Cr aufweist. Die Schichtdicke des Mantels beträgt 1/10 . . . 3/10 der Außendurchmessers des Bonddrahtes.
Beim Bonden bei Raum­ temperatur entsteht eine Verbindung zwischen dem Mantel und der Anschluß­ fläche. Die Herstellung einer direkten Verbindung zwischen dem Kern aus Kupfer und der Anschlußfläche ist nicht möglich.
Aus JP Pat. Abstr. 62-30359 A ist ein Bonddraht mit einem Kern aus Kupfer bekannt, der eine eigene Oxidschicht mit einer mittleren Schichtdichte von 5 nm bis 30 nm aufweist. Diese Schicht dient der Verhinderung von Mikroverschweißungen der einzelnen Lagen des Bonddrahtes auf der kreuzweise bewickelten Vorratsspule. Die Mantelschicht aus Kupferoxid verhindert das ungewollte Verschweißen des Bonddrahtes auf der Spule, hemmt aber zugleich den eigentlichen Schweißvorgang (Beeinträchtigung der Schweißeignung).
Aufgabe der Erfindung ist es, die Zuverlässigkeit des Ultraschallbondens mit Bonddrähten aus Gold oder Kupfer so zu erhöhen, dass die Bauelemente bei Raumtemperatur sicher gebondet werden können.
Diese Aufgabe wird durch einen Bonddraht nach dem Patentanspruch gelöst.
Mit reinem Goldmikrodraht wurden durch Ultraschall-Keilbonden bei Raumtemperatur und mit optimierten Bondparametern auf goldmetallisierte Pads Verbindungen hergestellt, deren im Abreißtest ermittelte mittlere Abreißkraft etwa 50% der Reißkraft des Drahtes betrug. Demgegenüber wurden für unter gleichen Bedingun­ gen hergestellte Verbindungen aus Goldmikrodraht mit einer Aluminium/Aluminiumoxid-Schicht von 50 nm Dicke eine mittlere Abreißkraft von etwa 80% der Reißkraft des Drahtes ermittelt.
Die Schicht schützt das Drahtmaterial bis zur Bindung vor Kontaminationen bzw. bei Kupfer vor Oxidation. Sie bricht bei der Drahtdeformation im Bondprozeß auf. Die eigentliche Bindung findet zwischen dem Drahtma­ terial und der Pad-Metallisierung statt.
Auch in den Fällen, wo mit ersten Testbeschichtungen noch keine wesentliche Verbesserung der mittleren Abreißkraft erreicht wurde, verringerte sich die Streuung der Abreißkräfte signifikant, und es konnte mit geringerer Energie und damit geringerer mechanische Belastung des Drahtes gebondet werden. Die vergleich­ weise geringe Drahtdeformation, die zur Ausbildung der Bindung nötig ist, führt wegen der geringeren Kerbwir­ kungen des Bondwerkzeuges zur Verbesserung der Gesamtfestigkeit der Verbindung und erhöhter Verfahrens­ zuverlässigkeit. Der Anteil der im Abreißtest durch Drahtriß ausgefallenen Bondverbindungen stieg gegenüber dem der durch Abheben ausgefallenen von 50 : 50 auf bis zu 84 : 14 deutlich an.
Die Technologien zur Ummantelung des Bonddrahtes mit den genannten Materialien sind grundsätzlich bekannt. Die Materialschichten können zum Beispiel aufgedampft, aufgesputtert oder galvanisch abgeschieden werden.
Die Erfindung wird nachfolgend in mehreren Ausführungsbeispielen dargestellt.
Getestet wurden in je 50 Bondversuchen mit Ultraschall (US) bei jeweils gleichen Bondparametern:
  • 1. Ein 30 µm dicker Golddraht aus 99,99% Gold mit einer Reißkraft von 13,5 cN und einer Dehnung von 6-8% (Draht 1).
  • 2. Ein Draht 1, auf dem eine 50 nm dicke Aluminiumschicht aufgesputtert und der an Luft oxidiert war (Draht 2).
  • 3. Ein Draht 1, der mit einer 200 nm dicken Zinnschicht überzogen und 24 h bei 155°C getempert war (Draht 3).
  • 4. Ein Draht 1, auf dem eine 50 nm dicke Nickelschicht galvanisch abgeschieden war (Draht 4).
Langzeituntersuchungen von Verbindungen mit dem Draht 2 bei trockener Wärme (155°C) bis zu 1200 h zeigten keine Veränderungen des anfänglichen Kontaktwiderstandes von 9 mOhm. Es kann angenommen werden, daß sich offensichtlich kein Aluminium aus der dünnen Mantelschicht des Bonddrahtes in die Verbin­ dungsschicht einlagert und sich keine intermetallischen Phasen bilden, sonst hatte der Kontaktwiderstand ansteigen müssen.

Claims (1)

1. Bonddraht zum Ultraschallbonden bei Raumtemperatur mit einem Kern aus Gold oder Kupfer und einer aufgebrachten Beschichtung aus Aluminium oder Aluminiumoxid, wobei die Beschichtung eine mittlere Schichtdicke von 5 nm bis 100 nm aufweist.
DE4232745A 1992-09-30 1992-09-30 Bonddraht zum Ultraschallbonden Expired - Lifetime DE4232745C2 (de)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006060899A1 (de) 2006-12-20 2008-07-10 Micro-Systems-Engineering Gmbh & Co. Kg Anschlussdraht, Verfahren zur Herstellung eines solchen und Baugruppe
DE102008043361A1 (de) 2008-10-31 2010-05-06 Micro Systems Engineering Gmbh Anschlussdraht und Verfahren zur Herstellung eines solchen
DE102010056343A1 (de) 2010-12-29 2012-07-05 Von Ardenne Anlagentechnik Gmbh Vorrichtung und Verfahren zur Rohrbeschichtung
US8485418B2 (en) 1995-05-26 2013-07-16 Formfactor, Inc. Method of wirebonding that utilizes a gas flow within a capillary from which a wire is played out
DE102010031993B4 (de) * 2010-07-22 2015-03-12 Heraeus Materials Technology Gmbh & Co. Kg Verfahren zur Herstellung eines Bonddrahtes, Bonddraht und Baugruppe, die einen solchen Bonddraht aufweist.

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US6835898B2 (en) 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US6336269B1 (en) 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
AU4160096A (en) * 1994-11-15 1996-06-06 Formfactor, Inc. Probe card assembly and kit, and methods of using same
EP0792517B1 (de) * 1994-11-15 2003-10-22 Formfactor, Inc. Elektrische kontaktstruktur aus flexiblem draht
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US20030006267A1 (en) * 2001-06-14 2003-01-09 Chen Kim H. Room temperature gold wire bonding
US20040217488A1 (en) 2003-05-02 2004-11-04 Luechinger Christoph B. Ribbon bonding
EP1925037A4 (de) * 2005-09-13 2011-10-26 Showa Denko Kk Lichtemittierende einrichtung
DE102013200308A1 (de) * 2013-01-11 2014-07-17 Infineon Technologies Ag Bonddraht und Verfahren zur Herstellung einer Bondverbindung

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DE3023528A1 (de) * 1980-06-24 1982-01-21 W.C. Heraeus Gmbh, 6450 Hanau Feistdraht zum kontaktieren von halbleiter-bauelementen
DD200954A1 (de) * 1981-10-20 1983-06-22 Wolfgang Werner Mikrodraht aus aluminium fuer das drahtbonden
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DE3023528A1 (de) * 1980-06-24 1982-01-21 W.C. Heraeus Gmbh, 6450 Hanau Feistdraht zum kontaktieren von halbleiter-bauelementen
DD200954A1 (de) * 1981-10-20 1983-06-22 Wolfgang Werner Mikrodraht aus aluminium fuer das drahtbonden
DE3618560A1 (de) * 1985-10-01 1987-04-02 Tanaka Electronics Ind Goldleitung zum verbinden von halbleiterelementen

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8485418B2 (en) 1995-05-26 2013-07-16 Formfactor, Inc. Method of wirebonding that utilizes a gas flow within a capillary from which a wire is played out
DE102006060899A1 (de) 2006-12-20 2008-07-10 Micro-Systems-Engineering Gmbh & Co. Kg Anschlussdraht, Verfahren zur Herstellung eines solchen und Baugruppe
DE102008043361A1 (de) 2008-10-31 2010-05-06 Micro Systems Engineering Gmbh Anschlussdraht und Verfahren zur Herstellung eines solchen
EP2190013A2 (de) 2008-10-31 2010-05-26 Micro Systems Engineering GmbH Anschlussdraht und Verfahren zur Herstellung eines solchen
US8450611B2 (en) 2008-10-31 2013-05-28 Heraeus Materials Technology Gmbh & Co. Kg Connecting wire and method for manufacturing same
DE102010031993B4 (de) * 2010-07-22 2015-03-12 Heraeus Materials Technology Gmbh & Co. Kg Verfahren zur Herstellung eines Bonddrahtes, Bonddraht und Baugruppe, die einen solchen Bonddraht aufweist.
DE102010056343A1 (de) 2010-12-29 2012-07-05 Von Ardenne Anlagentechnik Gmbh Vorrichtung und Verfahren zur Rohrbeschichtung

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