DE4223133A1 - Verfahren und vorrichtung fuer die schnelle thermische behandlung empfindlicher bauelemente - Google Patents

Verfahren und vorrichtung fuer die schnelle thermische behandlung empfindlicher bauelemente

Info

Publication number
DE4223133A1
DE4223133A1 DE4223133A DE4223133A DE4223133A1 DE 4223133 A1 DE4223133 A1 DE 4223133A1 DE 4223133 A DE4223133 A DE 4223133A DE 4223133 A DE4223133 A DE 4223133A DE 4223133 A1 DE4223133 A1 DE 4223133A1
Authority
DE
Germany
Prior art keywords
heating
temperature
components
energy density
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE4223133A
Other languages
German (de)
English (en)
Other versions
DE4223133C2 (https=
Inventor
Zsolt Dr Nenyei
Thomas Knarr
Heinrich Walk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Steag RTP Systems GmbH
Original Assignee
T Elektronik As GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by T Elektronik As GmbH filed Critical T Elektronik As GmbH
Priority to DE4223133A priority Critical patent/DE4223133A1/de
Publication of DE4223133A1 publication Critical patent/DE4223133A1/de
Application granted granted Critical
Publication of DE4223133C2 publication Critical patent/DE4223133C2/de
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/122—Incoherent waves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1902—Control of temperature characterised by the use of electric means characterised by the use of a variable reference value
    • G05D23/1904—Control of temperature characterised by the use of electric means characterised by the use of a variable reference value variable in time
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H10P34/422—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing using incoherent radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
DE4223133A 1991-07-15 1992-07-14 Verfahren und vorrichtung fuer die schnelle thermische behandlung empfindlicher bauelemente Granted DE4223133A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE4223133A DE4223133A1 (de) 1991-07-15 1992-07-14 Verfahren und vorrichtung fuer die schnelle thermische behandlung empfindlicher bauelemente

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4123318 1991-07-15
DE4223133A DE4223133A1 (de) 1991-07-15 1992-07-14 Verfahren und vorrichtung fuer die schnelle thermische behandlung empfindlicher bauelemente

Publications (2)

Publication Number Publication Date
DE4223133A1 true DE4223133A1 (de) 1993-01-21
DE4223133C2 DE4223133C2 (https=) 1993-07-15

Family

ID=25905469

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4223133A Granted DE4223133A1 (de) 1991-07-15 1992-07-14 Verfahren und vorrichtung fuer die schnelle thermische behandlung empfindlicher bauelemente

Country Status (1)

Country Link
DE (1) DE4223133A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4319652A1 (de) * 1993-06-14 1994-12-15 Bodenseewerk Perkin Elmer Co Verfahren zur Temperatursteuerung
DE19952017A1 (de) * 1999-10-28 2001-05-17 Steag Rtp Systems Gmbh Verfahren und Vorrichtung zum thermischen Behandeln von Substraten
WO2003060447A1 (en) * 2001-12-26 2003-07-24 Vortek Industries Ltd. Temperature measurement and heat-treating methods and systems

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4437361C2 (de) * 1994-10-19 1997-05-15 Ast Elektronik Gmbh Verfahren und Vorrichtung für die optische Schnellheizbehandlung empfindlicher elektronischer Bauelemente, insbesondere Halbleiterbauelemente
DE19529313A1 (de) * 1995-08-09 1997-02-13 Siemens Ag Betriebsverfahren für eine programmgesteuerte Recheneinheit zur Steuerung von Strahlerfeldern insbesondere von Thermoformmaschinen
DE19905524B4 (de) * 1999-02-10 2005-03-03 Steag Rtp Systems Gmbh Vorrichtung zum Messen der Temperatur von Substraten
DE19964181B4 (de) * 1999-02-10 2005-12-08 Steag Rtp Systems Gmbh Vorrichtung zum Messen der Tempertur von Substraten
DE19909564A1 (de) * 1999-03-04 2001-01-04 Siemens Ag Verfahren zur Verbesserung thermischer Prozeßschritte
KR20120045040A (ko) 2002-12-20 2012-05-08 맷슨 테크날러지 캐나다 인코퍼레이티드 피가공물 지지 방법
WO2005059991A1 (en) 2003-12-19 2005-06-30 Mattson Technology Canada Inc. Apparatuses and methods for suppressing thermally induced motion of a workpiece
JP5967859B2 (ja) 2006-11-15 2016-08-10 マトソン テクノロジー、インコーポレイテッド 熱処理中の被加工物を支持するシステムおよび方法
CN102089873A (zh) 2008-05-16 2011-06-08 加拿大马特森技术有限公司 工件破损防止方法及设备

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3862397A (en) * 1972-03-24 1975-01-21 Applied Materials Tech Cool wall radiantly heated reactor
US4101759A (en) * 1976-10-26 1978-07-18 General Electric Company Semiconductor body heater
US4356384A (en) * 1980-03-03 1982-10-26 Arnon Gat Method and means for heat treating semiconductor material using high intensity CW lamps
US4436985A (en) * 1982-05-03 1984-03-13 Gca Corporation Apparatus for heat treating semiconductor wafers
US4550245A (en) * 1982-10-26 1985-10-29 Ushio Denki Kabushiki Kaisha Light-radiant furnace for heating semiconductor wafers
US4581520A (en) * 1982-09-07 1986-04-08 Vu Duy Phach Heat treatment machine for semiconductors
US4680447A (en) * 1983-08-11 1987-07-14 Genus, Inc. Cooled optical window for semiconductor wafer heating
EP0290692A1 (en) * 1987-05-14 1988-11-17 AG Processing Technologies, Inc. Apparatus for heating semiconductor wafers
US4836138A (en) * 1987-06-18 1989-06-06 Epsilon Technology, Inc. Heating system for reaction chamber of chemical vapor deposition equipment
US4979134A (en) * 1988-07-15 1990-12-18 Minolta Camera Kabushiki Kaisha Method for measuring surface temperature of semiconductor wafer substrate, and heat-treating apparatus

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3862397A (en) * 1972-03-24 1975-01-21 Applied Materials Tech Cool wall radiantly heated reactor
US4101759A (en) * 1976-10-26 1978-07-18 General Electric Company Semiconductor body heater
US4356384A (en) * 1980-03-03 1982-10-26 Arnon Gat Method and means for heat treating semiconductor material using high intensity CW lamps
US4436985A (en) * 1982-05-03 1984-03-13 Gca Corporation Apparatus for heat treating semiconductor wafers
US4581520A (en) * 1982-09-07 1986-04-08 Vu Duy Phach Heat treatment machine for semiconductors
US4550245A (en) * 1982-10-26 1985-10-29 Ushio Denki Kabushiki Kaisha Light-radiant furnace for heating semiconductor wafers
US4680447A (en) * 1983-08-11 1987-07-14 Genus, Inc. Cooled optical window for semiconductor wafer heating
EP0290692A1 (en) * 1987-05-14 1988-11-17 AG Processing Technologies, Inc. Apparatus for heating semiconductor wafers
US4836138A (en) * 1987-06-18 1989-06-06 Epsilon Technology, Inc. Heating system for reaction chamber of chemical vapor deposition equipment
US4979134A (en) * 1988-07-15 1990-12-18 Minolta Camera Kabushiki Kaisha Method for measuring surface temperature of semiconductor wafer substrate, and heat-treating apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4319652A1 (de) * 1993-06-14 1994-12-15 Bodenseewerk Perkin Elmer Co Verfahren zur Temperatursteuerung
FR2706645A1 (fr) * 1993-06-14 1994-12-23 Bodenseewerk Perkin Elmer Co Procédé de régulation de la température d'un système.
US5703342A (en) * 1993-06-14 1997-12-30 Bodenseewerk Perkin-Elmer Gmbh Temperature control method using empirically determined characteristics
DE4319652C2 (de) * 1993-06-14 2002-08-08 Perkin Elmer Bodenseewerk Zwei Verfahren zur Temperatursteuerung
DE19952017A1 (de) * 1999-10-28 2001-05-17 Steag Rtp Systems Gmbh Verfahren und Vorrichtung zum thermischen Behandeln von Substraten
US7041610B1 (en) 1999-10-28 2006-05-09 Steag Rtp Systems Gmbh Method and apparatus for the thermal treatment of substrates
WO2003060447A1 (en) * 2001-12-26 2003-07-24 Vortek Industries Ltd. Temperature measurement and heat-treating methods and systems

Also Published As

Publication number Publication date
DE4223133C2 (https=) 1993-07-15

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: STEAG AST ELEKTRONIK GMBH, 85551 KIRCHHEIM, DE

8327 Change in the person/name/address of the patent owner

Owner name: STEAG RTP SYSTEMS GMBH, 89160 DORNSTADT, DE

R071 Expiry of right
R071 Expiry of right