DE3930063C2 - - Google Patents
Info
- Publication number
- DE3930063C2 DE3930063C2 DE3930063A DE3930063A DE3930063C2 DE 3930063 C2 DE3930063 C2 DE 3930063C2 DE 3930063 A DE3930063 A DE 3930063A DE 3930063 A DE3930063 A DE 3930063A DE 3930063 C2 DE3930063 C2 DE 3930063C2
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- deposition
- temperature
- oxygen
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 23
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 5
- 239000002887 superconductor Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 1
- 238000001755 magnetron sputter deposition Methods 0.000 claims 1
- 239000010949 copper Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- -1 oxygen ions Chemical class 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/087—Oxides of copper or solid solutions thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3930063A DE3930063A1 (de) | 1988-10-10 | 1989-09-09 | Verfahren zum abscheiden einer schicht aus einem hochtemperatur-supraleiter |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3834415 | 1988-10-10 | ||
| DE3930063A DE3930063A1 (de) | 1988-10-10 | 1989-09-09 | Verfahren zum abscheiden einer schicht aus einem hochtemperatur-supraleiter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3930063A1 DE3930063A1 (de) | 1990-04-12 |
| DE3930063C2 true DE3930063C2 (ar) | 1991-03-28 |
Family
ID=25873059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3930063A Granted DE3930063A1 (de) | 1988-10-10 | 1989-09-09 | Verfahren zum abscheiden einer schicht aus einem hochtemperatur-supraleiter |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3930063A1 (ar) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0132061B1 (ko) * | 1987-03-14 | 1998-04-24 | 나까하라 쯔네오 | 초전도 박막의 제작 방법 |
| DE3805010A1 (de) * | 1988-02-18 | 1989-08-24 | Kernforschungsanlage Juelich | Verfahren zur herstellung duenner schichten aus oxydischem hochtemperatur-supraleiter |
-
1989
- 1989-09-09 DE DE3930063A patent/DE3930063A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3930063A1 (de) | 1990-04-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8181 | Inventor (new situation) |
Free format text: HEIDEN, CHRISTOPH, PROF. DR.RER.NAT., 6307 LINDEN, DE HOEHLER, ANDREAS, DR.RER.NAT., 6300 GIESSEN, DE |
|
| D2 | Grant after examination | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: DAIMLER-BENZ AKTIENGESELLSCHAFT, 7000 STUTTGART, D |
|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: DAIMLERCHRYSLER AG, 70567 STUTTGART, DE |
|
| 8339 | Ceased/non-payment of the annual fee |