DE3886025D1 - Ladungsübertragungsanordnung mit einer verbesserten Ausgangsstufe. - Google Patents

Ladungsübertragungsanordnung mit einer verbesserten Ausgangsstufe.

Info

Publication number
DE3886025D1
DE3886025D1 DE88121402T DE3886025T DE3886025D1 DE 3886025 D1 DE3886025 D1 DE 3886025D1 DE 88121402 T DE88121402 T DE 88121402T DE 3886025 T DE3886025 T DE 3886025T DE 3886025 D1 DE3886025 D1 DE 3886025D1
Authority
DE
Germany
Prior art keywords
output stage
charge transfer
transfer arrangement
improved output
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88121402T
Other languages
English (en)
Other versions
DE3886025T2 (de
Inventor
Hiroaki C O Nec Corporati Itoh
Kazuo C O Nec Corporati Miwada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3886025D1 publication Critical patent/DE3886025D1/de
Publication of DE3886025T2 publication Critical patent/DE3886025T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE88121402T 1987-12-22 1988-12-21 Ladungsübertragungsanordnung mit einer verbesserten Ausgangsstufe. Expired - Fee Related DE3886025T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62326178A JPH084136B2 (ja) 1987-12-22 1987-12-22 電荷転送装置

Publications (2)

Publication Number Publication Date
DE3886025D1 true DE3886025D1 (de) 1994-01-13
DE3886025T2 DE3886025T2 (de) 1994-04-07

Family

ID=18184913

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88121402T Expired - Fee Related DE3886025T2 (de) 1987-12-22 1988-12-21 Ladungsübertragungsanordnung mit einer verbesserten Ausgangsstufe.

Country Status (4)

Country Link
US (1) US4993053A (de)
EP (1) EP0321953B1 (de)
JP (1) JPH084136B2 (de)
DE (1) DE3886025T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07123163B2 (ja) * 1989-07-21 1995-12-25 日本電気株式会社 電荷転送装置
KR940000953Y1 (ko) * 1991-04-13 1994-02-25 금성일렉트론 주식회사 Ccd의 리셋트 게이트 구조
JP2842724B2 (ja) * 1992-02-06 1999-01-06 シャープ株式会社 電荷転送素子
JPH05251480A (ja) * 1992-03-04 1993-09-28 Sony Corp 電荷電圧変換装置
JPH0698266A (ja) * 1992-09-10 1994-04-08 Matsushita Electron Corp 固体撮像装置
US5394003A (en) * 1993-05-20 1995-02-28 Electronic Decisions Inc. Acoustic charge transport device buffered architecture
US5612554A (en) * 1993-06-23 1997-03-18 Matsushita Electric Industrial Co., Ltd. Charge detection device and driver thereof
US5349303A (en) * 1993-07-02 1994-09-20 Cirque Corporation Electrical charge transfer apparatus
US5514886A (en) * 1995-01-18 1996-05-07 Eastman Kodak Company Image sensor with improved output region for superior charge transfer characteristics
US5600696A (en) * 1995-10-11 1997-02-04 David Sarnoff Research Center, Inc. Dual-gain floating diffusion output amplifier
DE19631899A1 (de) * 1996-08-07 1998-02-12 Siemens Ag Röntgenröhre
JPH11150685A (ja) * 1997-11-14 1999-06-02 Sony Corp 固体撮像装置およびその駆動方法、並びにカメラ
US6730863B1 (en) 1999-06-22 2004-05-04 Cirque Corporation Touchpad having increased noise rejection, decreased moisture sensitivity, and improved tracking
EP1130417B1 (de) * 2000-02-29 2007-10-03 Agfa HealthCare NV Vorrichtung zum Auslesen von Speicherleuchtstoff
JP4686830B2 (ja) * 2000-08-28 2011-05-25 ソニー株式会社 固体撮像素子及びその駆動方法
JP4130307B2 (ja) * 2001-01-15 2008-08-06 Ｎｅｃエレクトロニクス株式会社 固体撮像装置
FI120328B (fi) * 2005-04-12 2009-09-15 Planmeca Oy CCD-sensori ja menetelmä CCD-sensorin dynamiikan laajentamiseksi
US8279315B2 (en) 2005-04-12 2012-10-02 Planmeca Oy CCD sensor and method for expanding dynamic range of CCD sensor
US20070035649A1 (en) * 2005-08-10 2007-02-15 Micron Technology, Inc. Image pixel reset through dual conversion gain gate
US20070285547A1 (en) * 2006-05-30 2007-12-13 Milligan Edward S CMOS image sensor array optimization for both bright and low light conditions
US20110074996A1 (en) * 2009-09-29 2011-03-31 Shen Wang Ccd image sensors with variable output gains in an output circuit

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3903543A (en) * 1974-01-16 1975-09-02 Bell Telephone Labor Inc Charge transfer device decoder and compander
US4124861A (en) * 1975-10-01 1978-11-07 General Electric Company Charge transfer filter
US4124862A (en) * 1975-10-01 1978-11-07 General Electric Company Charge transfer filter
US4377755A (en) * 1980-07-15 1983-03-22 The United States Of America As Represented By The Secretary Of The Air Force Signal compressor apparatus
US4499590A (en) * 1981-12-03 1985-02-12 Westinghouse Electric Corp. Semiconductor circuit for compressing the dynamic range of a signal
US4598414A (en) * 1981-12-18 1986-07-01 Honeywell Inc. Input compression apparatus for charge coupled devices
US4435730A (en) * 1982-03-08 1984-03-06 Rca Corporation Low noise CCD output
US4513431A (en) * 1982-06-07 1985-04-23 International Business Machines Corporation Charge coupled device output circuit structure
JPS58220472A (ja) * 1982-06-16 1983-12-22 Toshiba Corp 電荷検出装置
JPS61187368A (ja) * 1985-02-15 1986-08-21 Toshiba Corp 電荷転送装置

Also Published As

Publication number Publication date
US4993053A (en) 1991-02-12
JPH01166561A (ja) 1989-06-30
DE3886025T2 (de) 1994-04-07
EP0321953A3 (en) 1990-06-06
JPH084136B2 (ja) 1996-01-17
EP0321953B1 (de) 1993-12-01
EP0321953A2 (de) 1989-06-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee