DE3880661D1 - Eingangsschutzstruktur fuer integrierte schaltung. - Google Patents
Eingangsschutzstruktur fuer integrierte schaltung.Info
- Publication number
- DE3880661D1 DE3880661D1 DE8888420416T DE3880661T DE3880661D1 DE 3880661 D1 DE3880661 D1 DE 3880661D1 DE 8888420416 T DE8888420416 T DE 8888420416T DE 3880661 T DE3880661 T DE 3880661T DE 3880661 D1 DE3880661 D1 DE 3880661D1
- Authority
- DE
- Germany
- Prior art keywords
- integrated circuit
- protection structure
- input protection
- input
- integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05541—Structure
- H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8717781A FR2624655B1 (fr) | 1987-12-14 | 1987-12-14 | Structure de protection d'un acces a un circuit integre |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3880661D1 true DE3880661D1 (de) | 1993-06-03 |
DE3880661T2 DE3880661T2 (de) | 1993-12-23 |
Family
ID=9358074
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE88420416T Expired - Fee Related DE3880661T2 (de) | 1987-12-14 | 1988-12-14 | Eingangsschutzstruktur für integrierte Schaltung. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4897757A (de) |
EP (1) | EP0326777B1 (de) |
JP (1) | JP2656588B2 (de) |
KR (1) | KR890011095A (de) |
DE (1) | DE3880661T2 (de) |
FR (1) | FR2624655B1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0492032B1 (de) * | 1990-12-21 | 1996-11-27 | STMicroelectronics S.r.l. | Schutzvorrichtung gegen elektrostatische Entladung für einen IC-Anschluss und deren integrierte Struktur |
US5196981A (en) * | 1990-12-28 | 1993-03-23 | National Semiconductor Corporation | ESD protection scheme |
JP3071851B2 (ja) * | 1991-03-25 | 2000-07-31 | 株式会社半導体エネルギー研究所 | 電気光学装置 |
EP0517391A1 (de) * | 1991-06-05 | 1992-12-09 | STMicroelectronics, Inc. | ESD-Schutzschaltung |
US6975296B1 (en) | 1991-06-14 | 2005-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
US6778231B1 (en) | 1991-06-14 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical display device |
US5272371A (en) * | 1991-11-19 | 1993-12-21 | Sgs-Thomson Microelectronics, Inc. | Electrostatic discharge protection structure |
US5139959A (en) * | 1992-01-21 | 1992-08-18 | Motorola, Inc. | Method for forming bipolar transistor input protection |
US5384482A (en) * | 1992-05-18 | 1995-01-24 | Nec Corporation | Semiconductor integrated circuit device having input protective circuit |
ATE171565T1 (de) * | 1992-06-30 | 1998-10-15 | St Microelectronics Srl | Struktur zur vermeidung des durchschaltens einer parasitären diode, die sich in einer epitaktischen wanne von integrierten schaltungen befindet |
US5428498A (en) * | 1992-09-28 | 1995-06-27 | Xerox Corporation | Office environment level electrostatic discharge protection |
IT1296832B1 (it) * | 1997-12-02 | 1999-08-02 | Sgs Thomson Microelectronics | Struttura integrata di protezione con dispositivi a soglia di conduzione inversa prestabilita di polarizzazione |
US7332750B1 (en) | 2000-09-01 | 2008-02-19 | Fairchild Semiconductor Corporation | Power semiconductor device with improved unclamped inductive switching capability and process for forming same |
US8355015B2 (en) | 2004-05-21 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device and electronic device including a diode electrically connected to a signal line |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE363829C (de) * | 1920-07-29 | 1922-11-14 | Jakob Hammel | Einschlagduebel |
US3201682A (en) * | 1960-09-23 | 1965-08-17 | Philips Corp | Voltage stabilization using a plurality of transistors and a zener diode |
US3787717A (en) * | 1971-12-09 | 1974-01-22 | Ibm | Over voltage protection circuit lateral bipolar transistor with gated collector junction |
JPS5714216A (en) * | 1980-06-30 | 1982-01-25 | Mitsubishi Electric Corp | Input protecting circuit |
US4405933A (en) * | 1981-02-04 | 1983-09-20 | Rca Corporation | Protective integrated circuit device utilizing back-to-back zener diodes |
US4527213A (en) * | 1981-11-27 | 1985-07-02 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor integrated circuit device with circuits for protecting an input section against an external surge |
JPS6180848A (ja) * | 1984-09-28 | 1986-04-24 | Hitachi Ltd | 静電破壊防止素子およびその製造方法 |
GB2185621B (en) * | 1985-10-29 | 1988-12-14 | Plessey Co Plc | Protection structures |
US4802054A (en) * | 1987-03-13 | 1989-01-31 | Motorola, Inc. | Input protection for an integrated circuit |
-
1987
- 1987-12-14 FR FR8717781A patent/FR2624655B1/fr not_active Expired - Lifetime
-
1988
- 1988-12-06 US US07/283,781 patent/US4897757A/en not_active Expired - Lifetime
- 1988-12-09 KR KR1019880016385A patent/KR890011095A/ko not_active Application Discontinuation
- 1988-12-13 JP JP63314829A patent/JP2656588B2/ja not_active Expired - Lifetime
- 1988-12-14 EP EP88420416A patent/EP0326777B1/de not_active Expired - Lifetime
- 1988-12-14 DE DE88420416T patent/DE3880661T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2656588B2 (ja) | 1997-09-24 |
KR890011095A (ko) | 1989-08-12 |
EP0326777B1 (de) | 1993-04-28 |
EP0326777A1 (de) | 1989-08-09 |
FR2624655B1 (fr) | 1990-05-11 |
FR2624655A1 (fr) | 1989-06-16 |
JPH022153A (ja) | 1990-01-08 |
US4897757A (en) | 1990-01-30 |
DE3880661T2 (de) | 1993-12-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |