DE3879527T2 - Plasma-Ätzen. - Google Patents

Plasma-Ätzen.

Info

Publication number
DE3879527T2
DE3879527T2 DE88100676T DE3879527T DE3879527T2 DE 3879527 T2 DE3879527 T2 DE 3879527T2 DE 88100676 T DE88100676 T DE 88100676T DE 3879527 T DE3879527 T DE 3879527T DE 3879527 T2 DE3879527 T2 DE 3879527T2
Authority
DE
Germany
Prior art keywords
etching
gas
cathode
article
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88100676T
Other languages
German (de)
English (en)
Other versions
DE3879527D1 (de
Inventor
Frank Daniel Egitto
Walter Eugene Mlynko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE3879527D1 publication Critical patent/DE3879527D1/de
Application granted granted Critical
Publication of DE3879527T2 publication Critical patent/DE3879527T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means

Landscapes

  • Drying Of Semiconductors (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
DE88100676T 1987-02-09 1988-01-19 Plasma-Ätzen. Expired - Fee Related DE3879527T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/012,696 US4985112A (en) 1987-02-09 1987-02-09 Enhanced plasma etching

Publications (2)

Publication Number Publication Date
DE3879527D1 DE3879527D1 (de) 1993-04-29
DE3879527T2 true DE3879527T2 (de) 1993-09-30

Family

ID=21756253

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88100676T Expired - Fee Related DE3879527T2 (de) 1987-02-09 1988-01-19 Plasma-Ätzen.

Country Status (4)

Country Link
US (1) US4985112A (enExample)
EP (1) EP0279188B1 (enExample)
JP (1) JPS63202919A (enExample)
DE (1) DE3879527T2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5110409A (en) * 1987-02-09 1992-05-05 Ibm Enhanced plasma etching
US5053246A (en) * 1990-03-30 1991-10-01 The Goodyear Tire & Rubber Company Process for the surface treatment of polymers for reinforcement-to-rubber adhesion
US5126289A (en) * 1990-07-20 1992-06-30 At&T Bell Laboratories Semiconductor lithography methods using an arc of organic material
US5456796A (en) * 1993-06-02 1995-10-10 Applied Materials, Inc. Control of particle generation within a reaction chamber
JP3365067B2 (ja) * 1994-02-10 2003-01-08 ソニー株式会社 プラズマ装置およびこれを用いたプラズマ処理方法
US5783100A (en) * 1994-03-16 1998-07-21 Micron Display Technology, Inc. Method of high density plasma etching for semiconductor manufacture
US5983828A (en) * 1995-10-13 1999-11-16 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US6253704B1 (en) 1995-10-13 2001-07-03 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US6794301B2 (en) 1995-10-13 2004-09-21 Mattson Technology, Inc. Pulsed plasma processing of semiconductor substrates
US5902494A (en) * 1996-02-09 1999-05-11 Applied Materials, Inc. Method and apparatus for reducing particle generation by limiting DC bias spike
US6121163A (en) 1996-02-09 2000-09-19 Applied Materials, Inc. Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface
US6465043B1 (en) * 1996-02-09 2002-10-15 Applied Materials, Inc. Method and apparatus for reducing particle contamination in a substrate processing chamber
US5972796A (en) * 1996-12-12 1999-10-26 Texas Instruments Incorporated In-situ barc and nitride etch process

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3677799A (en) * 1970-11-10 1972-07-18 Celanese Corp Vapor phase boron deposition by pulse discharge
US4357195A (en) * 1979-06-25 1982-11-02 Tegal Corporation Apparatus for controlling a plasma reaction
US4263088A (en) * 1979-06-25 1981-04-21 Motorola, Inc. Method for process control of a plasma reaction
GB2105729B (en) * 1981-09-15 1985-06-12 Itt Ind Ltd Surface processing of a substrate material
US4357203A (en) * 1981-12-30 1982-11-02 Rca Corporation Plasma etching of polyimide
US4401507A (en) * 1982-07-14 1983-08-30 Advanced Semiconductor Materials/Am. Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions
US4500563A (en) * 1982-12-15 1985-02-19 Pacific Western Systems, Inc. Independently variably controlled pulsed R.F. plasma chemical vapor processing
GB2144343A (en) * 1983-08-02 1985-03-06 Standard Telephones Cables Ltd Optical fibre manufacture
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
JPS6130036A (ja) * 1984-07-23 1986-02-12 Fujitsu Ltd マイクロ波プラズマ処理装置
US4626315A (en) * 1984-11-09 1986-12-02 Fuji Photo Film Co., Ltd. Process of forming ultrafine pattern
US4585516A (en) * 1985-03-04 1986-04-29 Tegal Corporation Variable duty cycle, multiple frequency, plasma reactor
US4617079A (en) * 1985-04-12 1986-10-14 The Perkin Elmer Corporation Plasma etching system
US4602981A (en) * 1985-05-06 1986-07-29 International Business Machines Corporation Monitoring technique for plasma etching
EP0203560A1 (en) * 1985-05-31 1986-12-03 Tegal Corporation Plasma trench etch
FR2613168B1 (fr) * 1985-10-16 1991-08-30 France Etat Procede et dispositif de gravure par plasma d'un materiau

Also Published As

Publication number Publication date
EP0279188B1 (en) 1993-03-24
US4985112A (en) 1991-01-15
EP0279188A3 (en) 1988-12-21
EP0279188A2 (en) 1988-08-24
JPH0552054B2 (enExample) 1993-08-04
DE3879527D1 (de) 1993-04-29
JPS63202919A (ja) 1988-08-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee