DE3879527T2 - Plasma-Ätzen. - Google Patents
Plasma-Ätzen.Info
- Publication number
- DE3879527T2 DE3879527T2 DE88100676T DE3879527T DE3879527T2 DE 3879527 T2 DE3879527 T2 DE 3879527T2 DE 88100676 T DE88100676 T DE 88100676T DE 3879527 T DE3879527 T DE 3879527T DE 3879527 T2 DE3879527 T2 DE 3879527T2
- Authority
- DE
- Germany
- Prior art keywords
- etching
- gas
- cathode
- article
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001020 plasma etching Methods 0.000 title claims description 11
- 238000000034 method Methods 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 29
- 239000007789 gas Substances 0.000 claims description 29
- 239000004642 Polyimide Substances 0.000 claims description 12
- 229920001721 polyimide Polymers 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 7
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 6
- 239000011368 organic material Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 230000001965 increasing effect Effects 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 2
- 239000004952 Polyamide Substances 0.000 claims description 2
- 229920002647 polyamide Polymers 0.000 claims description 2
- 229920000098 polyolefin Polymers 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000012634 fragment Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- -1 polypropylene Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- ZRUOTKQBVMWMDK-UHFFFAOYSA-N 2-hydroxy-6-methylbenzaldehyde Chemical compound CC1=CC=CC(O)=C1C=O ZRUOTKQBVMWMDK-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- XXTZHYXQVWRADW-UHFFFAOYSA-N diazomethanone Chemical compound [N]N=C=O XXTZHYXQVWRADW-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical compound O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004634 thermosetting polymer Substances 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/012,696 US4985112A (en) | 1987-02-09 | 1987-02-09 | Enhanced plasma etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3879527D1 DE3879527D1 (de) | 1993-04-29 |
| DE3879527T2 true DE3879527T2 (de) | 1993-09-30 |
Family
ID=21756253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE88100676T Expired - Fee Related DE3879527T2 (de) | 1987-02-09 | 1988-01-19 | Plasma-Ätzen. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4985112A (enExample) |
| EP (1) | EP0279188B1 (enExample) |
| JP (1) | JPS63202919A (enExample) |
| DE (1) | DE3879527T2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5110409A (en) * | 1987-02-09 | 1992-05-05 | Ibm | Enhanced plasma etching |
| US5053246A (en) * | 1990-03-30 | 1991-10-01 | The Goodyear Tire & Rubber Company | Process for the surface treatment of polymers for reinforcement-to-rubber adhesion |
| US5126289A (en) * | 1990-07-20 | 1992-06-30 | At&T Bell Laboratories | Semiconductor lithography methods using an arc of organic material |
| US5456796A (en) * | 1993-06-02 | 1995-10-10 | Applied Materials, Inc. | Control of particle generation within a reaction chamber |
| JP3365067B2 (ja) * | 1994-02-10 | 2003-01-08 | ソニー株式会社 | プラズマ装置およびこれを用いたプラズマ処理方法 |
| US5783100A (en) * | 1994-03-16 | 1998-07-21 | Micron Display Technology, Inc. | Method of high density plasma etching for semiconductor manufacture |
| US5983828A (en) * | 1995-10-13 | 1999-11-16 | Mattson Technology, Inc. | Apparatus and method for pulsed plasma processing of a semiconductor substrate |
| US6253704B1 (en) | 1995-10-13 | 2001-07-03 | Mattson Technology, Inc. | Apparatus and method for pulsed plasma processing of a semiconductor substrate |
| US6794301B2 (en) | 1995-10-13 | 2004-09-21 | Mattson Technology, Inc. | Pulsed plasma processing of semiconductor substrates |
| US6121163A (en) | 1996-02-09 | 2000-09-19 | Applied Materials, Inc. | Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface |
| US5902494A (en) * | 1996-02-09 | 1999-05-11 | Applied Materials, Inc. | Method and apparatus for reducing particle generation by limiting DC bias spike |
| US6465043B1 (en) * | 1996-02-09 | 2002-10-15 | Applied Materials, Inc. | Method and apparatus for reducing particle contamination in a substrate processing chamber |
| US5972796A (en) * | 1996-12-12 | 1999-10-26 | Texas Instruments Incorporated | In-situ barc and nitride etch process |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3677799A (en) * | 1970-11-10 | 1972-07-18 | Celanese Corp | Vapor phase boron deposition by pulse discharge |
| US4263088A (en) * | 1979-06-25 | 1981-04-21 | Motorola, Inc. | Method for process control of a plasma reaction |
| US4357195A (en) * | 1979-06-25 | 1982-11-02 | Tegal Corporation | Apparatus for controlling a plasma reaction |
| GB2105729B (en) * | 1981-09-15 | 1985-06-12 | Itt Ind Ltd | Surface processing of a substrate material |
| US4357203A (en) * | 1981-12-30 | 1982-11-02 | Rca Corporation | Plasma etching of polyimide |
| US4401507A (en) * | 1982-07-14 | 1983-08-30 | Advanced Semiconductor Materials/Am. | Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions |
| US4500563A (en) * | 1982-12-15 | 1985-02-19 | Pacific Western Systems, Inc. | Independently variably controlled pulsed R.F. plasma chemical vapor processing |
| GB2144343A (en) * | 1983-08-02 | 1985-03-06 | Standard Telephones Cables Ltd | Optical fibre manufacture |
| US4579618A (en) * | 1984-01-06 | 1986-04-01 | Tegal Corporation | Plasma reactor apparatus |
| JPS6130036A (ja) * | 1984-07-23 | 1986-02-12 | Fujitsu Ltd | マイクロ波プラズマ処理装置 |
| US4626315A (en) * | 1984-11-09 | 1986-12-02 | Fuji Photo Film Co., Ltd. | Process of forming ultrafine pattern |
| US4585516A (en) * | 1985-03-04 | 1986-04-29 | Tegal Corporation | Variable duty cycle, multiple frequency, plasma reactor |
| US4617079A (en) * | 1985-04-12 | 1986-10-14 | The Perkin Elmer Corporation | Plasma etching system |
| US4602981A (en) * | 1985-05-06 | 1986-07-29 | International Business Machines Corporation | Monitoring technique for plasma etching |
| EP0203560A1 (en) * | 1985-05-31 | 1986-12-03 | Tegal Corporation | Plasma trench etch |
| FR2613168B1 (fr) * | 1985-10-16 | 1991-08-30 | France Etat | Procede et dispositif de gravure par plasma d'un materiau |
-
1987
- 1987-02-09 US US07/012,696 patent/US4985112A/en not_active Expired - Fee Related
- 1987-12-18 JP JP62319136A patent/JPS63202919A/ja active Granted
-
1988
- 1988-01-19 DE DE88100676T patent/DE3879527T2/de not_active Expired - Fee Related
- 1988-01-19 EP EP88100676A patent/EP0279188B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0279188A2 (en) | 1988-08-24 |
| EP0279188A3 (en) | 1988-12-21 |
| DE3879527D1 (de) | 1993-04-29 |
| US4985112A (en) | 1991-01-15 |
| EP0279188B1 (en) | 1993-03-24 |
| JPH0552054B2 (enExample) | 1993-08-04 |
| JPS63202919A (ja) | 1988-08-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |