DE3878530D1 - Anordnung, die eine sperrschichtstruktur mit resonantem tunneleffekt aufweist. - Google Patents

Anordnung, die eine sperrschichtstruktur mit resonantem tunneleffekt aufweist.

Info

Publication number
DE3878530D1
DE3878530D1 DE8888310498T DE3878530T DE3878530D1 DE 3878530 D1 DE3878530 D1 DE 3878530D1 DE 8888310498 T DE8888310498 T DE 8888310498T DE 3878530 T DE3878530 T DE 3878530T DE 3878530 D1 DE3878530 D1 DE 3878530D1
Authority
DE
Germany
Prior art keywords
arrangement
barrier structure
tunnel effect
resonant tunnel
resonant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888310498T
Other languages
English (en)
Other versions
DE3878530T2 (de
Inventor
Shunichi Muto
Tsugo Inata
Atsushi Takeuchi
Yoshihiro Sugiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3878530D1 publication Critical patent/DE3878530D1/de
Publication of DE3878530T2 publication Critical patent/DE3878530T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • H01L29/882—Resonant tunneling diodes, i.e. RTD, RTBD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Recrystallisation Techniques (AREA)
DE8888310498T 1987-11-10 1988-11-08 Anordnung, die eine sperrschichtstruktur mit resonantem tunneleffekt aufweist. Expired - Fee Related DE3878530T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62282057A JPH0770743B2 (ja) 1987-11-10 1987-11-10 共鳴トンネリングバリア構造デバイス

Publications (2)

Publication Number Publication Date
DE3878530D1 true DE3878530D1 (de) 1993-03-25
DE3878530T2 DE3878530T2 (de) 1993-06-03

Family

ID=17647595

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888310498T Expired - Fee Related DE3878530T2 (de) 1987-11-10 1988-11-08 Anordnung, die eine sperrschichtstruktur mit resonantem tunneleffekt aufweist.

Country Status (5)

Country Link
US (1) US4929984A (de)
EP (1) EP0316139B1 (de)
JP (1) JPH0770743B2 (de)
KR (1) KR920006434B1 (de)
DE (1) DE3878530T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02101791A (ja) * 1988-10-11 1990-04-13 Yokogawa Electric Corp 共鳴トンネリングダイオード
JPH03174790A (ja) * 1989-09-26 1991-07-29 Fujitsu Ltd 光半導体素子
JP2553760B2 (ja) * 1990-11-16 1996-11-13 住友電気工業株式会社 高電子移動度トランジスタ
US5132746A (en) * 1991-01-04 1992-07-21 International Business Machines Corporation Biaxial-stress barrier shifts in pseudomorphic tunnel devices
DE69417943T2 (de) * 1993-03-22 1999-12-23 Hughes Electronics Corp., El Segundo Stromgesteuerte Vorrichtung mit resonantem Tunneleffekt
KR970011140B1 (ko) * 1993-12-08 1997-07-07 한국전자통신연구원 공명 투과광전 소자의 구조
US5532510A (en) * 1994-12-30 1996-07-02 At&T Corp. Reverse side etching for producing layers with strain variation
US6229153B1 (en) * 1996-06-21 2001-05-08 Wisconsin Alumni Research Corporation High peak current density resonant tunneling diode
JP2001077352A (ja) * 1999-09-07 2001-03-23 Sony Corp 半導体素子およびその製造方法
JP2002244294A (ja) 2001-02-20 2002-08-30 Nippon Zeon Co Ltd レジスト組成物及びレジストパターン形成方法
JP2005175295A (ja) * 2003-12-12 2005-06-30 Hitachi Ltd 半導体光素子及び光モジュール
JP2016039314A (ja) * 2014-08-08 2016-03-22 旭化成株式会社 化合物半導体基板

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4198644A (en) * 1978-06-09 1980-04-15 The United States Of America As Represented By The Secretary Of The Army Tunnel diode
FR2504732A1 (fr) * 1981-04-27 1982-10-29 Thomson Csf Transistor tunnel a double heterojonction
JPS6158268A (ja) * 1984-08-30 1986-03-25 Fujitsu Ltd 高速半導体装置

Also Published As

Publication number Publication date
EP0316139A3 (en) 1990-01-10
JPH01124269A (ja) 1989-05-17
KR890009005A (ko) 1989-07-13
US4929984A (en) 1990-05-29
DE3878530T2 (de) 1993-06-03
KR920006434B1 (ko) 1992-08-06
EP0316139A2 (de) 1989-05-17
JPH0770743B2 (ja) 1995-07-31
EP0316139B1 (de) 1993-02-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee