DE3878345D1 - Bimosschaltung, faehig zum betrieb bei hoher geschwindigkeit mit niedrigem verbrauch. - Google Patents
Bimosschaltung, faehig zum betrieb bei hoher geschwindigkeit mit niedrigem verbrauch.Info
- Publication number
- DE3878345D1 DE3878345D1 DE8888113356T DE3878345T DE3878345D1 DE 3878345 D1 DE3878345 D1 DE 3878345D1 DE 8888113356 T DE8888113356 T DE 8888113356T DE 3878345 T DE3878345 T DE 3878345T DE 3878345 D1 DE3878345 D1 DE 3878345D1
- Authority
- DE
- Germany
- Prior art keywords
- bimo
- switching
- operate
- high speed
- low consumption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
- H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62203156A JPS6447124A (en) | 1987-08-17 | 1987-08-17 | Inverter circuit |
JP63020278A JPH01194711A (ja) | 1988-01-29 | 1988-01-29 | インバータ回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3878345D1 true DE3878345D1 (de) | 1993-03-25 |
DE3878345T2 DE3878345T2 (de) | 1993-05-27 |
Family
ID=26357190
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888113356T Expired - Fee Related DE3878345T2 (de) | 1987-08-17 | 1988-08-17 | Bimosschaltung, faehig zum betrieb bei hoher geschwindigkeit mit niedrigem verbrauch. |
Country Status (3)
Country | Link |
---|---|
US (1) | US4926069A (de) |
EP (1) | EP0304035B1 (de) |
DE (1) | DE3878345T2 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2550138B2 (ja) * | 1988-03-18 | 1996-11-06 | 株式会社日立製作所 | バイポーラトランジスタと電界効果トランジスタとを有する半導体集積回路装置 |
JPH0239719A (ja) * | 1988-07-29 | 1990-02-08 | Fujitsu Ltd | 半導体回路 |
JPH07120937B2 (ja) * | 1988-11-08 | 1995-12-20 | 日本電気株式会社 | インバータ回路 |
DE3904901A1 (de) * | 1989-02-17 | 1990-08-23 | Texas Instruments Deutschland | Integrierte gegentakt-ausgangsstufe |
EP0387461A1 (de) * | 1989-03-14 | 1990-09-19 | International Business Machines Corporation | BICMOS-Schaltung mit vollem Spannungshub für logische Signale |
DE69026534T2 (de) * | 1989-05-15 | 1996-09-12 | Texas Instruments Inc | BICMOS-Hochleistungsschaltkreis mit voller Ausgangsspannungsschwingung |
JPH02303216A (ja) * | 1989-05-17 | 1990-12-17 | Fujitsu Ltd | 半導体集積回路 |
JPH0355914A (ja) * | 1989-07-25 | 1991-03-11 | Fujitsu Ltd | 半導体装置 |
US5063304A (en) * | 1990-04-27 | 1991-11-05 | Texas Instruments Incorporated | Integrated circuit with improved on-chip power supply control |
US5140191A (en) * | 1990-11-05 | 1992-08-18 | Molorola, Inc. | Low di/dt BiCMOS output buffer with improved speed |
JP2570492B2 (ja) * | 1990-11-28 | 1997-01-08 | 日本電気株式会社 | 半導体回路 |
JP3079515B2 (ja) * | 1991-01-29 | 2000-08-21 | 株式会社東芝 | ゲ−トアレイ装置及び入力回路及び出力回路及び降圧回路 |
US5132567A (en) * | 1991-04-18 | 1992-07-21 | International Business Machines Corporation | Low threshold BiCMOS circuit |
US5118972A (en) * | 1991-06-13 | 1992-06-02 | International Business Machines Corporation | BiCMOS gate pull-down circuit |
US5369309A (en) * | 1991-10-30 | 1994-11-29 | Harris Corporation | Analog-to-digital converter and method of fabrication |
US5994755A (en) * | 1991-10-30 | 1999-11-30 | Intersil Corporation | Analog-to-digital converter and method of fabrication |
US5254891A (en) * | 1992-04-20 | 1993-10-19 | International Business Machines Corporation | BICMOS ECL circuit suitable for delay regulation |
US5355035A (en) * | 1993-01-08 | 1994-10-11 | Vora Madhukar B | High speed BICMOS switches and multiplexers |
US6002268A (en) * | 1993-01-08 | 1999-12-14 | Dynachip Corporation | FPGA with conductors segmented by active repeaters |
US5552724A (en) * | 1993-09-17 | 1996-09-03 | Texas Instruments Incorporated | Power-down reference circuit for ECL gate circuitry |
DE102009001966A1 (de) | 2009-03-30 | 2010-10-07 | Evonik Röhm Gmbh | Beschichtungszusammensetzung,(Meth)acryl-Polymer und Monomermischung zur Herstellung des(Meth)acryl-Polymers |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3274039D1 (en) * | 1981-02-25 | 1986-12-04 | Toshiba Kk | Complementary mosfet logic circuit |
KR890004212B1 (en) * | 1983-07-08 | 1989-10-27 | Fujitsu Ltd | Complementary logic circuit |
JPH0693626B2 (ja) * | 1983-07-25 | 1994-11-16 | 株式会社日立製作所 | 半導体集積回路装置 |
EP0209805B1 (de) * | 1985-07-22 | 1993-04-07 | Hitachi, Ltd. | Halbleitereinrichtung mit bipolarem Transistor und Isolierschicht-Feldeffekttransistor |
US4675557A (en) * | 1986-03-20 | 1987-06-23 | Motorola Inc. | CMOS voltage translator |
JPH07120727B2 (ja) * | 1987-03-27 | 1995-12-20 | 株式会社東芝 | BiMOS論理回路 |
-
1988
- 1988-08-17 US US07/233,072 patent/US4926069A/en not_active Expired - Lifetime
- 1988-08-17 DE DE8888113356T patent/DE3878345T2/de not_active Expired - Fee Related
- 1988-08-17 EP EP88113356A patent/EP0304035B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4926069A (en) | 1990-05-15 |
EP0304035A2 (de) | 1989-02-22 |
EP0304035A3 (en) | 1989-07-12 |
DE3878345T2 (de) | 1993-05-27 |
EP0304035B1 (de) | 1993-02-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
8339 | Ceased/non-payment of the annual fee |