DE3877407T2 - Herstellung einer vorrichtung durch roentgenstrahllithographie mittels einer stabilen bornitrid-maske. - Google Patents

Herstellung einer vorrichtung durch roentgenstrahllithographie mittels einer stabilen bornitrid-maske.

Info

Publication number
DE3877407T2
DE3877407T2 DE8888303705T DE3877407T DE3877407T2 DE 3877407 T2 DE3877407 T2 DE 3877407T2 DE 8888303705 T DE8888303705 T DE 8888303705T DE 3877407 T DE3877407 T DE 3877407T DE 3877407 T2 DE3877407 T2 DE 3877407T2
Authority
DE
Germany
Prior art keywords
layer
boron
membrane
ray
containing layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888303705T
Other languages
German (de)
English (en)
Other versions
DE3877407D1 (de
Inventor
Roland Albert Levy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of DE3877407D1 publication Critical patent/DE3877407D1/de
Publication of DE3877407T2 publication Critical patent/DE3877407T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8888303705T 1987-05-01 1988-04-25 Herstellung einer vorrichtung durch roentgenstrahllithographie mittels einer stabilen bornitrid-maske. Expired - Fee Related DE3877407T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/045,907 US4868093A (en) 1987-05-01 1987-05-01 Device fabrication by X-ray lithography utilizing stable boron nitride mask

Publications (2)

Publication Number Publication Date
DE3877407D1 DE3877407D1 (de) 1993-02-25
DE3877407T2 true DE3877407T2 (de) 1993-05-13

Family

ID=21940476

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888303705T Expired - Fee Related DE3877407T2 (de) 1987-05-01 1988-04-25 Herstellung einer vorrichtung durch roentgenstrahllithographie mittels einer stabilen bornitrid-maske.

Country Status (4)

Country Link
US (1) US4868093A (enExample)
EP (1) EP0289249B1 (enExample)
JP (1) JPS63285932A (enExample)
DE (1) DE3877407T2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5066533A (en) * 1989-07-11 1991-11-19 The Perkin-Elmer Corporation Boron nitride membrane in wafer structure and process of forming the same
DE69014759T2 (de) * 1989-07-11 1995-04-13 Redwood Microsystems Inc Bornitridmembran in einer Halbleiterplättchenstruktur.
US5270125A (en) * 1989-07-11 1993-12-14 Redwood Microsystems, Inc. Boron nutride membrane in wafer structure
US5185631A (en) * 1989-07-18 1993-02-09 Mita Industrial Co., Ltd. Apparatus for uniformly supplying powder with reduced remnant powder
US5527586A (en) * 1992-03-18 1996-06-18 Printron, Inc. Apparatus and method for depositing metal particles on a dielectric substrate
US5307394A (en) * 1993-01-27 1994-04-26 Oleg Sokolov Device for producing X-ray images on objects composed of photo or X-ray sensitive materials
JP4959080B2 (ja) * 1999-06-07 2012-06-20 エクストリーム、ウルトラバイオレット、リミテッド、ライアビリティ、カンパニー 反射マスク基板のコーティング
US7144803B2 (en) * 2003-04-17 2006-12-05 Semiconductor Research Corporation Methods of forming boron carbo-nitride layers for integrated circuit devices
JP5997530B2 (ja) * 2011-09-07 2016-09-28 Hoya株式会社 マスクブランク、転写用マスク、および半導体デバイスの製造方法
CN104391426A (zh) * 2014-11-21 2015-03-04 胜科纳米（苏州）有限公司 一种掩膜版

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4096297A (en) * 1973-11-19 1978-06-20 Raytheon Company Isotropic boron nitride and method of making same
US4018938A (en) * 1975-06-30 1977-04-19 International Business Machines Corporation Fabrication of high aspect ratio masks
US4171489A (en) * 1978-09-13 1979-10-16 Bell Telephone Laboratories, Incorporated Radiation mask structure
US4301237A (en) * 1979-07-12 1981-11-17 Western Electric Co., Inc. Method for exposing substrates to X-rays
US4436797A (en) * 1982-06-30 1984-03-13 International Business Machines Corporation X-Ray mask
US4522842A (en) * 1982-09-09 1985-06-11 At&T Bell Laboratories Boron nitride X-ray masks with controlled stress
JPS5946648A (ja) * 1982-09-10 1984-03-16 Nippon Telegr & Teleph Corp <Ntt> メンブレンの製造方法
JPH06105779B2 (ja) * 1983-02-28 1994-12-21 双葉電子工業株式会社 半導体装置及びその製造方法
EP0149044B1 (en) * 1983-11-11 1987-05-13 Research Development Corporation of Japan Boron nitride containing titanium nitride, method of producing the same and composite ceramics produced therefrom
US4539278A (en) * 1984-03-12 1985-09-03 Eaton Corporation Mask structure for X-ray lithography and method for making same
US4677042A (en) * 1984-11-05 1987-06-30 Canon Kabushiki Kaisha Mask structure for lithography, method for preparation thereof and lithographic method
JPS61201607A (ja) * 1985-02-28 1986-09-06 Denki Kagaku Kogyo Kk 熱分解窒化ホウ素物品およびその製造方法
US4604292A (en) * 1985-04-26 1986-08-05 Spire Corporation X-ray mask blank process
US4668336A (en) * 1985-07-23 1987-05-26 Micronix Corporation Process for making a mask used in x-ray photolithography
US4608268A (en) * 1985-07-23 1986-08-26 Micronix Corporation Process for making a mask used in x-ray photolithography
US4680243A (en) * 1985-08-02 1987-07-14 Micronix Corporation Method for producing a mask for use in X-ray photolithography and resulting structure

Also Published As

Publication number Publication date
EP0289249A2 (en) 1988-11-02
US4868093A (en) 1989-09-19
DE3877407D1 (de) 1993-02-25
JPS63285932A (ja) 1988-11-22
EP0289249B1 (en) 1993-01-13
EP0289249A3 (en) 1989-05-03
JPH0530295B2 (enExample) 1993-05-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8339 Ceased/non-payment of the annual fee