DE3873171D1 - Vorrichtung zum zonenschmelzen eines halbleiterstabes. - Google Patents

Vorrichtung zum zonenschmelzen eines halbleiterstabes.

Info

Publication number
DE3873171D1
DE3873171D1 DE8888108273T DE3873171T DE3873171D1 DE 3873171 D1 DE3873171 D1 DE 3873171D1 DE 8888108273 T DE8888108273 T DE 8888108273T DE 3873171 T DE3873171 T DE 3873171T DE 3873171 D1 DE3873171 D1 DE 3873171D1
Authority
DE
Germany
Prior art keywords
melting
stick
semiconductor
semiconductor stick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888108273T
Other languages
English (en)
Other versions
DE3873171T2 (de
Inventor
Yasuhiro Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE3873171D1 publication Critical patent/DE3873171D1/de
Publication of DE3873171T2 publication Critical patent/DE3873171T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/30—Arrangements for remelting or zone melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
DE8888108273T 1987-05-25 1988-05-24 Vorrichtung zum zonenschmelzen eines halbleiterstabes. Expired - Fee Related DE3873171T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62125804A JPS63291888A (ja) 1987-05-25 1987-05-25 半導体単結晶製造装置

Publications (2)

Publication Number Publication Date
DE3873171D1 true DE3873171D1 (de) 1992-09-03
DE3873171T2 DE3873171T2 (de) 1993-03-04

Family

ID=14919316

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888108273T Expired - Fee Related DE3873171T2 (de) 1987-05-25 1988-05-24 Vorrichtung zum zonenschmelzen eines halbleiterstabes.

Country Status (4)

Country Link
US (1) US5009860A (de)
EP (1) EP0292919B1 (de)
JP (1) JPS63291888A (de)
DE (1) DE3873171T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6562132B2 (en) * 2001-04-04 2003-05-13 Ase Americas, Inc. EFG crystal growth apparatus and method
JP5365617B2 (ja) * 2010-12-14 2013-12-11 信越半導体株式会社 半導体単結晶製造装置及び半導体単結晶の製造方法
JP2012162419A (ja) * 2011-02-07 2012-08-30 Toyota Motor Corp 単結晶製造装置及び単結晶製造方法
CN102808216A (zh) * 2012-08-22 2012-12-05 北京京运通科技股份有限公司 一种区熔单晶硅生产工艺方法及区熔热场
JP6233182B2 (ja) * 2014-05-15 2017-11-22 信越半導体株式会社 単結晶の製造方法及び単結晶製造装置
JP6645376B2 (ja) * 2016-08-02 2020-02-14 信越半導体株式会社 直径制御装置及びｆｚ単結晶の直径測定方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2898430A (en) * 1958-03-07 1959-08-04 Citroen Sa Andre Induction heating devices
DE1260439B (de) * 1964-02-08 1968-02-08 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen
DK138779B (da) * 1966-06-15 1978-10-30 Siemens Ag Fremgangsmåde til digelfri zonesmeltning.
DE1644004A1 (de) * 1967-04-21 1970-04-02 Siemens Ag Verfahren und Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes,insbesondere Halbleiterstabes
DE1644006A1 (de) * 1967-04-29 1970-04-02 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes,insbesondere Halbleiterstabes
BE789504A (fr) * 1971-12-07 1973-01-15 Siemens Ag Bobine de chauffage par induction pour la fusion par zones sanscreuset de barreaux semiconducteurs
US4045278A (en) * 1973-11-22 1977-08-30 Siemens Aktiengesellschaft Method and apparatus for floating melt zone of semiconductor crystal rods

Also Published As

Publication number Publication date
EP0292919A1 (de) 1988-11-30
DE3873171T2 (de) 1993-03-04
JPS63291888A (ja) 1988-11-29
EP0292919B1 (de) 1992-07-29
JPH0565476B1 (de) 1993-09-17
US5009860A (en) 1991-04-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee