DE3860513D1 - Herstellungsverfahren eines grossen diamantes. - Google Patents

Herstellungsverfahren eines grossen diamantes.

Info

Publication number
DE3860513D1
DE3860513D1 DE8888107340T DE3860513T DE3860513D1 DE 3860513 D1 DE3860513 D1 DE 3860513D1 DE 8888107340 T DE8888107340 T DE 8888107340T DE 3860513 T DE3860513 T DE 3860513T DE 3860513 D1 DE3860513 D1 DE 3860513D1
Authority
DE
Germany
Prior art keywords
manufacturing process
large diamond
diamond
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888107340T
Other languages
English (en)
Inventor
Syuichi C O Itami Works Satoh
Kazuwo C O Itami Works Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE3860513D1 publication Critical patent/DE3860513D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0655—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0675—Structural or physico-chemical features of the materials processed
    • B01J2203/068—Crystal growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
DE8888107340T 1987-05-08 1988-05-06 Herstellungsverfahren eines grossen diamantes. Expired - Fee Related DE3860513D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62112862A JPH0779958B2 (ja) 1987-05-08 1987-05-08 大型ダイヤモンドの合成方法

Publications (1)

Publication Number Publication Date
DE3860513D1 true DE3860513D1 (de) 1990-10-04

Family

ID=14597389

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888107340T Expired - Fee Related DE3860513D1 (de) 1987-05-08 1988-05-06 Herstellungsverfahren eines grossen diamantes.

Country Status (8)

Country Link
US (1) US4836881A (de)
EP (1) EP0290044B1 (de)
JP (1) JPH0779958B2 (de)
KR (1) KR900003322B1 (de)
CN (1) CN1014693B (de)
DE (1) DE3860513D1 (de)
IE (1) IE61745B1 (de)
ZA (1) ZA883150B (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03505861A (ja) * 1988-06-03 1991-12-19 マサチューセッツ・インステチュート・オブ・テクノロジー ダイヤモンド上の二酸化ケイ素フィルム
JPH03278463A (ja) * 1990-03-27 1991-12-10 Canon Inc ショットキーダイオードの形成方法
CA2044543C (en) * 1990-08-10 1999-12-14 Louis Kimball Bigelow Multi-layer superhard film structure
AU647941B2 (en) * 1991-07-12 1994-03-31 De Beers Industrial Diamond Division (Proprietary) Limited Diamond synthesis
US5370299A (en) * 1992-04-23 1994-12-06 Sumitomo Electric Industries, Ltd. Bonding tool having diamond head and method of manufacturing the same
US5437243A (en) * 1992-07-01 1995-08-01 Pike-Biegunski; Maciej J. Process for fabricating diamond by supercritical electrical current
US5620754A (en) * 1994-01-21 1997-04-15 Qqc, Inc. Method of treating and coating substrates
US5731046A (en) * 1994-01-18 1998-03-24 Qqc, Inc. Fabrication of diamond and diamond-like carbon coatings
US5554415A (en) * 1994-01-18 1996-09-10 Qqc, Inc. Substrate coating techniques, including fabricating materials on a surface of a substrate
DE69503285T2 (de) * 1994-04-07 1998-11-05 Sumitomo Electric Industries Diamantwafer und Verfahren zur Herstellung eines Diamantwafers
DE69516035T2 (de) 1994-05-23 2000-08-31 Sumitomo Electric Industries Verfharen zum Herstellen eines mit hartem Material bedeckten Halbleiters
EP0699776B1 (de) * 1994-06-09 1999-03-31 Sumitomo Electric Industries, Limited Wafer und Verfahren zur Herstellung eines Wafers
JP4291886B2 (ja) * 1994-12-05 2009-07-08 住友電気工業株式会社 低欠陥ダイヤモンド単結晶及びその合成方法
US6887144B2 (en) 1996-11-12 2005-05-03 Diamond Innovations, Inc. Surface impurity-enriched diamond and method of making
DE19704482A1 (de) * 1997-02-06 1998-08-13 Basf Ag Verfahren zur Herstellung von halogenfreiem, reaktivem Polyisobuten
US7128547B2 (en) * 2004-01-13 2006-10-31 Chien-Min Sung High pressure split die and associated methods
WO2005067530A2 (en) * 2004-01-13 2005-07-28 Chien-Min Sung High pressure crystal growth apparatuses and associated methods
US8454714B2 (en) 2004-03-01 2013-06-04 Chien-Min Sung Diamond growth devices and methods
US9133566B2 (en) * 2005-12-09 2015-09-15 Element Six Technologies Limited High crystalline quality synthetic diamond
US7435296B1 (en) * 2006-04-18 2008-10-14 Chien-Min Sung Diamond bodies grown on SiC substrates and associated methods
GB0704516D0 (en) * 2007-03-08 2007-04-18 Element Six Ltd Diamond
GB0900771D0 (en) 2009-01-16 2009-03-04 Element Six Ltd Diamond
GB201000768D0 (en) * 2010-01-18 2010-03-03 Element Six Ltd CVD single crystal diamond material
US9238875B2 (en) 2011-02-01 2016-01-19 Sunset Peak International Limited Multilayer structure for a diamond growth and a method of providing the same
US20120312227A1 (en) 2011-06-10 2012-12-13 Gemesis Diamond Company Multi-heater system for growing high quality diamond and a method for growing the same
CN104190324B (zh) * 2014-07-31 2016-04-13 红安安达新材料有限责任公司 超大腔体金刚石合成装置
CN111321466A (zh) * 2020-03-25 2020-06-23 武汉大学 大尺寸单晶金刚石生长方法及生长用复合基底
CN112064120B (zh) * 2020-08-13 2021-09-03 中南钻石有限公司 一种大尺寸培育金刚石用籽晶及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4832518A (de) * 1971-08-30 1973-04-28
US4082185A (en) * 1973-11-02 1978-04-04 General Electric Company Manufacture of diamond products
US4034066A (en) * 1973-11-02 1977-07-05 General Electric Company Method and high pressure reaction vessel for quality control of diamond growth on diamond seed
JPS5669211A (en) * 1979-11-01 1981-06-10 Sumitomo Electric Ind Ltd Preparation of diamond
JPS587989A (ja) * 1981-07-06 1983-01-17 Nec Corp 固体撮像素子およびこれを用いたレジストレ−ション調整方法
US4617181A (en) * 1983-07-01 1986-10-14 Sumitomo Electric Industries, Ltd. Synthetic diamond heat sink
US4632817A (en) * 1984-04-04 1986-12-30 Sumitomo Electric Industries, Ltd. Method of synthesizing diamond
US4547257A (en) * 1984-09-25 1985-10-15 Showa Denko Kabushiki Kaisha Method for growing diamond crystals

Also Published As

Publication number Publication date
KR900003322B1 (ko) 1990-05-14
CN1014693B (zh) 1991-11-13
JPH0779958B2 (ja) 1995-08-30
IE61745B1 (en) 1994-11-30
US4836881A (en) 1989-06-06
ZA883150B (en) 1990-01-31
EP0290044A1 (de) 1988-11-09
KR880014143A (ko) 1988-12-23
CN88103598A (zh) 1988-12-07
IE881372L (en) 1988-11-08
JPS63278544A (ja) 1988-11-16
EP0290044B1 (de) 1990-08-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee