KR880014143A - 대형 다이어몬드의 합성방법 - Google Patents

대형 다이어몬드의 합성방법 Download PDF

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Publication number
KR880014143A
KR880014143A KR1019880005169A KR880005169A KR880014143A KR 880014143 A KR880014143 A KR 880014143A KR 1019880005169 A KR1019880005169 A KR 1019880005169A KR 880005169 A KR880005169 A KR 880005169A KR 880014143 A KR880014143 A KR 880014143A
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South Korea
Prior art keywords
solvent
diamond
growth
seed crystal
diameter
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KR1019880005169A
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KR900003322B1 (ko
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슈이찌 사또오
가즈오 쯔지
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나까하라 쯔네오
스미도모덴기고오교오 가부시기가이샤
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0655—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0675—Structural or physico-chemical features of the materials processed
    • B01J2203/068—Crystal growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

내용 없음

Description

대형 다이어몬드의 합성 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 종래의 합성방법을 표시한 도면, 제 2 도는 다이어몬드의 각면의 성장압력온도 영역을 표시한 도면, 제 3 도는 종래의 합성법에 의해서(100)면을 종면으로 사용했을 때의 초기의 결정성장 상태를 표시한 도면.

Claims (6)

  1. 온도차법을 사용해서, 다이어몬드를 합성하는 방법에 있어서, 직경 3mm이상의 종결정의(111)면을 성장면으로서 사용하고, 이 성장면을 다이어몬드 안정 영역하에서 전체면을 한 번 용해시킨 후, 결정성장을 개시시키고, 또 합성시의 탄소원과 접촉하는 쪽의 용매현상이, 평면 또는 곡면으로 구성되는 볼록형상을 가진 용매를 사용하고,(111)면이 지배적인 압력온도 조건하에서 성장시키는 것을 특징으로 하는 외경 8mm이상의 대형 다이어몬드의 합성방법.
  2. 온도차법을 사용해서, 다이어몬드를 합성하는 방법에 있어서, 직경 3mm이상의 종결정의(100)면을 성장면으로서 상용하고, 이 성장면을 다이어몬드의 안정 압력하이고 또한 용매와 탄소의 공정점보다 20℃~60℃높은 온도범위에 놓고, 전체표면을 한 번 용해한후, 결정상을 개시시키고, 또 합성시의 탄소원과 접촉하는 쪽의 용매현상이 평면 또는 곡면으로 구성되는 블록형상을 가진 용매를 사용하고, (100)면이 지배적인 압력온도 조건하에서 성장시키는 것을 특징으로 하는 1변의 길이가 8mm이상의 대형 다이어몬드의 합성방법.
  3. 제 1 항 및 제 2 항에 있어서, 상기 종결정의 성장면을 용해하는데 이 성장조건에 있어서의 탄소포화농도의 50~80중량%의 탄소를 미리 함유한 용매를 사용하는 것을 특징으로 하는 대형 다이어몬드의 합성방법.
  4. 제 1 항 및 제 2 항에 있어서, 상기 종결정의 성장면을 용해하는데, Pd, Pt, Pb,Ir,Ru,Os의 1원소 또는, 복수의 원소로 이루어진 금속에, 5~30중량%의 Ni 또는 Co를 첨가한 합금층을 종결정과 용매의 사이에 삽입하는 것을 특징으로 하는 대형 다이어몬드의 합성방법.
  5. 제 1 항 및 제 2 항에 있어서, 상기 볼록형상을 가진 용매의 중앙부가 외주부보다 20~200% 두껍거나 또는 탄소원과의 접촉부가 구형인것을 특징으로 하는 대형 다이어몬드의 합성방법.
  6. 제 1 항 및 제 2 항에 있어서, 상기 종결정으로서, 용매직경의 1/4이상의 직경을 가진 종결정을 사용하고, 용매의 종결점쪽이 원추대이고, 작은쪽의 원형표면에 종결정을 배치시키고, 이 원추대의 원추면과, 상기 원형표면이 이루는 각도가 5~45℃인 용매를 사용함으로서, 다이어몬드 단면형상과, 용매 단면형상이 동일하다는 것을 특징으로 하는 대형 다이어몬드의 합성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880005169A 1987-05-08 1988-05-04 대형다이어몬드의 합성방법 KR900003322B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62-112862 1987-05-08
JP62112862A JPH0779958B2 (ja) 1987-05-08 1987-05-08 大型ダイヤモンドの合成方法

Publications (2)

Publication Number Publication Date
KR880014143A true KR880014143A (ko) 1988-12-23
KR900003322B1 KR900003322B1 (ko) 1990-05-14

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Country Status (8)

Country Link
US (1) US4836881A (ko)
EP (1) EP0290044B1 (ko)
JP (1) JPH0779958B2 (ko)
KR (1) KR900003322B1 (ko)
CN (1) CN1014693B (ko)
DE (1) DE3860513D1 (ko)
IE (1) IE61745B1 (ko)
ZA (1) ZA883150B (ko)

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CA2044543C (en) * 1990-08-10 1999-12-14 Louis Kimball Bigelow Multi-layer superhard film structure
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US5620754A (en) * 1994-01-21 1997-04-15 Qqc, Inc. Method of treating and coating substrates
DE69503285T2 (de) * 1994-04-07 1998-11-05 Sumitomo Electric Industries Diamantwafer und Verfahren zur Herstellung eines Diamantwafers
EP0684106B1 (en) 1994-05-23 2000-04-05 Sumitomo Electric Industries, Ltd. Method to produce a hard material coated wafer
DE69508679T2 (de) * 1994-06-09 1999-08-12 Sumitomo Electric Industries Wafer und Verfahren zur Herstellung eines Wafers
JP4291886B2 (ja) * 1994-12-05 2009-07-08 住友電気工業株式会社 低欠陥ダイヤモンド単結晶及びその合成方法
US6887144B2 (en) 1996-11-12 2005-05-03 Diamond Innovations, Inc. Surface impurity-enriched diamond and method of making
DE19704482A1 (de) * 1997-02-06 1998-08-13 Basf Ag Verfahren zur Herstellung von halogenfreiem, reaktivem Polyisobuten
EP1704033A4 (en) * 2004-01-13 2009-04-22 Chien-Min Sung HIGH PRESSURE CRYSTAL STRETCHING APPARATUS AND ASSOCIATED METHODS
US7128547B2 (en) * 2004-01-13 2006-10-31 Chien-Min Sung High pressure split die and associated methods
US8454714B2 (en) 2004-03-01 2013-06-04 Chien-Min Sung Diamond growth devices and methods
WO2007066215A2 (en) * 2005-12-09 2007-06-14 Element Six Technologies (Pty) Ltd High crystalline quality synthetic diamond
US7435296B1 (en) * 2006-04-18 2008-10-14 Chien-Min Sung Diamond bodies grown on SiC substrates and associated methods
GB0704516D0 (en) * 2007-03-08 2007-04-18 Element Six Ltd Diamond
GB0900771D0 (en) 2009-01-16 2009-03-04 Element Six Ltd Diamond
GB201000768D0 (en) * 2010-01-18 2010-03-03 Element Six Ltd CVD single crystal diamond material
US9238875B2 (en) 2011-02-01 2016-01-19 Sunset Peak International Limited Multilayer structure for a diamond growth and a method of providing the same
US20120312227A1 (en) 2011-06-10 2012-12-13 Gemesis Diamond Company Multi-heater system for growing high quality diamond and a method for growing the same
CN104190324B (zh) * 2014-07-31 2016-04-13 红安安达新材料有限责任公司 超大腔体金刚石合成装置
CN111321466A (zh) * 2020-03-25 2020-06-23 武汉大学 大尺寸单晶金刚石生长方法及生长用复合基底
CN112064120B (zh) * 2020-08-13 2021-09-03 中南钻石有限公司 一种大尺寸培育金刚石用籽晶及其制备方法

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Also Published As

Publication number Publication date
KR900003322B1 (ko) 1990-05-14
ZA883150B (en) 1990-01-31
CN1014693B (zh) 1991-11-13
IE881372L (en) 1988-11-08
EP0290044A1 (en) 1988-11-09
US4836881A (en) 1989-06-06
CN88103598A (zh) 1988-12-07
IE61745B1 (en) 1994-11-30
JPH0779958B2 (ja) 1995-08-30
EP0290044B1 (en) 1990-08-29
DE3860513D1 (de) 1990-10-04
JPS63278544A (ja) 1988-11-16

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